• Fashion & Textile Research Journal
• /
• v.5 no.5
• /
• pp.520-528
• /
• 2003

Chitosan was depolymerized by oxidizing agent, hydrogen peroxide ($H_2O_2$) and general properties of resulting low molecular weight chitosan(LMWC) were studied. Effect of amount of $H_2O_2$, ratio of $H_2O_2$/chitosan, and reaction temperature were investigated in preparing LMWC. In addition, the reduction of molecular weight of prepared LMWC were measured after a certain time passage. Pre-swelling treatment of starting chitosan affected uniform and mild reaction of depolymerization and increased the solubility of resulting LMWC. Prepared LMWC (Mw 100,000) showed a decrease in Mw by 25-35%. Prepared LMWC(Mw 60,000-70,000) showed a decrease in Mw by 10-15% after 7 months. Therefore, this depolymerizing process can be concluded desirable in terms of stability. In addition, yellowing of pre-swelling treated chitosan upon time passage was insignificant compared with that of untreated chitosan. Therefore, pre-swelling treatment of chitosan before depolymerization would be beneficial in terms of stability of physical state.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2005.05b
• /
• pp.349-352
• /
• 2005

In this work, effects of limestone powder on hydration of $C_3A-CaSO_4\cdot2H_2O$ system was discussed based on the XRD Quantitative analysis, and the possibility of Delayed Ettringite Formation was also discussed. The early hydration of $C_{3}A$ was delayed by addition of $CaCO_{3}$ powder. The delay effect was enhanced by increasing of $CaCO_{3}$ content and finer powder of $CaCO_{3}$ addition. After consumption of $CaSO_4\cdot2H_2O$, the reaction of $CaCO_{3}$ is started. Delayed Ettringite Formation would take place because monosulfoaluminate is not stable in presence of $CaCO_{3}$. In order to prevent the delayed ettringite formation in $C_3A-CaSO_4\cdot2H_2O-CaCo_3$ system, the reduction of monosulfoaluminate formation is important. Therefore, by increasing the amount of $CaCO_{3}$ addition and finer $CaCO_{3}$ powder addition, the delayed ettringite formation can be prevented.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.22 no.1
• /
• pp.45-51
• /
• 1977

The studies were carried to know the effects of GA$_3$, Ethrel and $H_2O$$_2$ on dormancy and germination in ginseng seeds. GA$_3$ stimulated the embryo growth and increased dehiscent (Kaekapp) ratio of the seeds for more than Ethrel and $H_2O$$_2$ GA$_3$ not only increased germination ratio but also shortened the period of germination. Ethrel and $H_2O$$_2$ showed no effects on the germination and there were no significant differences among the treatment levels of GA$_3$. The slow germination of ginseng seeds seemed to be mainly due to the dormancy of endosperm or seed coat rather than of embryo.

• Journal of the Korean Ceramic Society
• /
• v.30 no.6
• /
• pp.485-491
• /
• 1993

Porous glass in the ZrO2.SiO2 system containning up to 30mol% zirconia were prepared by the sol-gel method from metal alkoxides and their pore characteristics with reaction parameters were investigated. The gels were made by hydrolyzing and condensation of the mixed metla alkoxides and were converted into the porous glass by heating up to $700^{\circ}C$. As a results, the mean pore radius became larger with increasing contents of HCl, H2O and hydrolysis temperature, and an alcohol with a large molecular weight for making the porous glass. In the case of 20ZrO2.80SiO2 porous glass with heated at $700^{\circ}C$, HCl and H2O content was 0.3mol and 4mol, the specific surface area was 284$m^2$/g, average mean pore radius was about 19.4$\AA$, porosity was 22.55% and pore characteristics depended on heating temperature.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1490-1492
• /
• 1994

Diamond thin films were deposited on Si substrate from $CH_4-H_2-O_2$ system by MWPECVD at the condition of power of 800W, pressure of 80torr, $H_2$ flow rate of $75{\sim}81sccm$, $O_2$ flow rate of $0{\sim}3.8sccm$, $CH_4$ flow rate of $4.8{\sim}9sccm$, substrate temp, of $950{\sim}1010^{\circ}C$ and deposition time of 5hr. The deposited films were characterized by SEM, XRD and Raman spectroscopy. The growth rates of thin films and particles was measured. Good quality were synthesized at 40% of oxygen concentration which 6% of fixed metane concentration, and at 50%. Its deposition rates were $2.4{\mu}m/h$ respectively. As oxygen concentration increased, it was known that the broad peak of $1350 cm^{-1}$ was shifted to $1332cm^{-1}$ due to etching of carbon component.

• Applied Chemistry for Engineering
• /
• v.17 no.3
• /
• pp.250-254
• /
• 2006

Reaction of $CO_2$ with $Li_{2}ZrO_{3}$ has been investigated in a TGA and the effects of $H_{2}$ and CO on the removal of $CO_{2}$ using $Li_{2}ZrO_{3}$ were evaluated in a packed bed reactor. The initial rate of $CO_{2}$ removal reaction of $Li_{2}ZrO_{3}$ increased with the increase of gas flow rate up to 100 mL/min and then was maintained, which implied the disappearance of the gas film resistance. The reaction of $CO_{2}$ with $Li_{2}ZrO_{3}$ took place as the first order and the range of optimum temperature was found to be about $500{\sim}600^{\circ}C$. XRD and SEM analysis showed the formation of crystalline $Li_{2}ZrO_{3}$ and porous $Li_{2}ZrO_{3}$/$ZrO_{2}$. The presence of $H_{2}$ did not affect the adsorption of $CO_2$ with $Li_2ZrO_3$. On the other hand, CO inhibited the sorption of $CO_{2}$ into $Li_{2}CO_{3}$(L) on $Li_{2}ZrO_{3}$.

• Electrical & Electronic Materials
• /
• v.8 no.4
• /
• pp.418-425
• /
• 1995

The surface of GaAs was treated by using the 0.1M solution of N $a_{2}$S.9 $H_{2}$O. The passivation of the surface in this sample was investigated by the photoreflectance(PR) experiment. The surface electric field( $E_{s}$) and built-in voltage( $V_{bi}$ ) discussed from Franz-Keldysh oscillation of PR signals. The density of surface states and Fermi level of GaAs treated with N $a_{2}$S.9 $H_{2}$O for 40min were determined 1.61*10$^{12}$ c $m^{-2}$ and 0.73eV. These values were about 15 and 10% smaller than those in untreated sample.e.

• Restorative Dentistry and Endodontics
• /
• v.15 no.1
• /
• pp.187-200
• /
• 1990

The purpose of this study was to investigate antimicrobial effect of several irrigation solutions on 7 anaerobes and 2 aerobes, which are found frequently in infected root canals. The antimicrobial effects of normal saline, 3% $H_2O_2$, 0.5% & 3.5% NaOCl, 10% & 50% citric acid and mixed solutions of 3% $H_2O_2$ plus 3.5% NaOCl were compared. No. 80 paper points dipped in bacterial broth were soaked in each irrigation solutions and moved into thioglycolate broth, subcultured in agar plate for bacterial growth. The results were as follows: 1. Normal saline had no antimicrobial effect. 2. Mixed solutions of 3% $H_2O_2$ plus 3.5% NaOCl, 10% citric acid had relatively weak antimicrobial effect. 3.3% $H_2O_2$, 50% citric acid, 0.5% NaOCl showed relatively strong antimicrobial effect. 4. 3.5% NaOCl had the strongest antimicrobial effect among used 7 irrigation solutions.

• Journal of Korean Society of Environmental Engineers
• /
• v.32 no.2
• /
• pp.219-226
• /
• 2010

In order to evaluate a removal characteristic of chloramphenicol, salicylic acid and ketoprofen according to dose of oxidants, $Cl_2$, $O_3$ and $O_3/H_2O_2$ are used as oxidants in this study. In case of that $Cl_2$ is used for oxidizing harmaceuticals, chloramphenicol, salicylic acid and ketoprofen is not removed entirely at $Cl_2$ dose rang of 0.5~5.0 mg/L for 60 min. However, removal tendency of salicylic acid is so obviously at $Cl_2$ dose higher than 1.0 mg/L. In addition, as $Cl_2$ dose and contact time increase, the removal rate of salicylic acid is enhanced. When $O_3$ is used as oxidant, chloramphenicol and ketoprofen is not eliminated at $O_3$ dose range of 0.2~2.0 mg/L. On the contrary, 30~70% of salicylic acid is removed at $O_3$ dose of 1.0~5.0 mg/L. Only 30% removal of salicylic acid is achieved at contact time of 5 min, however, the removal rate is enhanced remarkably at contact time over 10 min. In experiments using $O_3/H_2O_2$ as an oxidant, we can find that $O_3/H_2O_2$ is much more effective than $O_3$ only for removal of 3 pharmaceuticals, and the efficiency is raised according to increase of $H_2O_2$ dose. On reaction rate constant and half-life of 3 pharmaceuticals depending on $Cl_2$, $O_3$ and $O_3/H_2O_2$ dose, experiments using $O_3/H_2O_2$ show that oxidation of pharmaceuticals is less effective as the $H_2O_2/O_3$ ratio increases to above pproximately 1.0 related to reaction rate constant. An oxidation of salicylic acid by $Cl_2$ and $O_3$ particularly has a comparatively high reaction rate constant comparing $O_3/H_2O_2$, and thus salicylic acid is easily eliminated in oxidation processes.

• Journal of Sensor Science and Technology
• /
• v.1 no.1
• /
• pp.5-12
• /
• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.