• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.289-294
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• 2010

Ni-YSZ (Yttria Stabilized Zirconia) composite powders for SOFC were fabricated by glycine nitrate process. $ZrO(NO_3)_2{\cdot}2H_2O$, $Y(NO_3)_3{\cdot}6H_2O$, $Ni(NO_3)_2{\cdot}6H_2O$ and glycine were chosen as the starting materials. The structural properties of the sintered Ni-YSZ cermets have been investigated with respect to the volume contents of Ni. A porous microstructure consisting of homogeneously distributed Ni and YSZ phases together with well-connected grains was observed. The sintered Ni-YSZ cermets showed a porous microstructure consists of homogeneously distributed Ni and YSZ phases and the grains were well-connected. It was found that the open porosity is sensitive to the volume content of Ni. The Ni-YSZ cermet containing 35 vol% Ni seems to be suitable for the electrode material of SOFC since it provides sufficient open porosity higher than 30%.

• Environmental Engineering Research
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• v.20 no.2
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• pp.181-189
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• 2015

A composite material was tested to eliminate phenol in aqueous solution combining adsorption on activated carbon and photocatalysis with $TiO_2$ in two different ways. A first implementation involved a sequential process with a loop reactor. The aim was to reuse this material as adsorbent several times with in situ photocatalytic regeneration. This process alternated a step of adsorption in the dark and a step of photocatalytic oxidation under UV irradiation with or without $H_2O_2$. Without $H_2O_2$, the composite material was poorly regenerated due to the accumulation of phenol and intermediates in the solution and on $TiO_2$ particles. In presence of $H_2O_2$, the regeneration of the composite material was clearly enhanced. After five consecutive adsorption runs, the amount of eliminated phenol was twice the maximum adsorption capacity. The phenol degradation could be described by a pseudo first-order kinetic model where constants were much higher with $H_2O_2$ (about tenfold) due to additional ${\bullet}OH$ radicals. The second implementation was in a continuous process as with a fixed bed reactor where adsorption and photocatalysis occurred simultaneously. The results were promising as a steady state was reached indicating stabilized behavior for both adsorption and photocatalysis.

• Journal of Life Science
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• v.22 no.12
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• pp.1658-1664
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• 2012

Conjugated linoleic acid (CLA) exhibits several beneficial biological activities including anticarcinogenesis and body-fat reduction. Now, we report that CLA ameliorated the oxidative stress in rat cardiomyoblast cells, H9c2, treated with hydrogen peroxide ($H_2O_2$). Cells were cultured in DMEM/F-12 media at $37^{\circ}C$ with humidified atmosphere of 5% $CO_2$. The cells, cultured for 48 hrs, were seeded at a density $3.5{\times}10^3$ cell/well in a 24 well-plate and incubated for 24 hr. Using these cells, two experiments were performed: the cytotoxicity test of CLA (10, 20, 30, 40, and $50{\mu}Ms$), and the oxidative stress amelioration test of CLA (20 and $50{\mu}Ms$) against cells treated with $H_2O_2$ (10 and 50 ${\mu}Ms$) for 1 and 2 hrs. CLA enhanced the growth of H9c2 cells at any concentrations of CLA and at any incubation times (up to 6 days), indicating that CLA acts as a growth stimulant. No protective effect of CLA (20 and $50{\mu}Ms$) was seen in cells treated $50{\mu}M$ $H_2O_2$ for 1 and 2 hr, but these CLA concentrations ameliorated (p<0.05) the adverse effect of $10{\mu}M$ $H_2O_2$ in cells treated for 1 hr. These CLA concentrations significantly (p<0.05) reduced the proportion of apoptotic cells, relative to control cells. These results suggest that CLA protected H9c2 cells from the oxidative stress of $H_2O_2$ through the suppression of cell apoptosis and could be a useful compound for the prevention of cardiac diseases caused by oxidative stress.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.11
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• pp.561-565
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• 2004

SiO₂ thin films are fabricated using sol-gel method and dipping method. Gelation time is faster according to increasing the amount of H₂O except H₂O/Si(OC₂H/sub 5/)₄=4. Initial viscosity is highest at H₂O/Si(OC₂H/sub 5/)₄=6. Gelation time is faster according to increasing the amount of CH₃COOH. The relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. The dielectric dissipation factor of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

• Korean Membrane Journal
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• v.3 no.1
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• pp.69-74
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• 2001

Films of TiO$_2$/SiO$_2$ were deposited on the inner surface of the porous glass support tubes by decomposition of tetraisopropyl titanate (TIPT) and tetraethyl orthosilicate (TEOS) at atmospheric pressure. Dense and hydrogen -permselective membranes were formed at 400-600$\^{C}$. The permeation rates of H$_2$ through the membrane at 600$\^{C}$ were 0.2-0.4 ㎤(STP)/min-㎠ atm and H$_2$:N$_2$permeation ratios were above 1000. The permeation properties of the membranes were investigated at various deposition temperatures and TIPT/TEOS concentrations. Decomposition of TIPT alone at temperatures above 400$\^{C}$ produced porous crystalline TiO$_2$ films and they were not H7-selective. Decomposition of TEOS produced H$_2$-permeable SiO$_2$ films at 400-600$\^{C}$ but film deposition rate was very low. Addition of TIFT to the TEOS stream significantly accelerated the deposition rate and produced highly H$_2$-selective films. Increasing the TIPT/TEOS concentration ratio increased the deposition rate. The TiO$_2$/SiO$_2$ membranes formed at 600 $\^{C}$ have the permeation properties comparable to those of SiO$_2$ membranes produced from TEOS.

• Bulletin of the Korean Chemical Society
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• v.5 no.4
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• pp.167-169
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• 1984

Analyses of $_1$H-NMR, infrared and electronic spectral data for $[Ir(CH_2 = CHCN)(CO)(P(C_6H_5)_3)_2]ClO_4 (1)$prepared by the reaction of $Ir(OClO_3)(CO)(P(C_6H_5)_3)_2$ with $CH_2 = CHCN$, agree with the suggestion that 1 is a mixture of the nitrogen-bonded acrylonitrile complex, $[(CO)(P(C_6H_5)_3)_2Ir-NCCH = CH_2]ClO_4$ and other compound which may be the C = C ${\Pi}$ -system-bonded acrylonitrile complex, "[(CO)(P(C6H5)3)2Ir-CHCN = CH2]ClO4.

• Tuberculosis and Respiratory Diseases
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• v.44 no.3
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• pp.592-600
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• 1997

Background : The level of imposed work of breathing (WOB) is important for patient-ventilator synchrony and during weaning from mechanical ventilation. Triggering methods and the sensitivity of demand system are important determining factors of the imposed WOB. Flow triggering method is available on several modern ventilator and is believed to impose less work to a patient-triggered breath than pressure triggering method. We intended to compare the level of imposed WOB on two different methods of triggering and also at different levels of sensitivities on each triggering method (0.7 L/min vs 2.0 L/min on flow triggering ; $-1\;cmH_2O$ vs $-2cm\;H_2O$ on pressure triggering). Methods : The subjects were 12 patients ($64.8{\pm}4.2\;yrs$) on mechanical ventilation and were stable in respiratory pattern on CPAP $3\;cmH_2O$. Four different triggering sensitivities were applied at random order. For determination of imposed WOB, tracheal end pressure was measured through the monitoring lumen of Hi-Lo Jet tracheal tube (Mallincrodt, New York, USA) using pneumotachograph/pressure transducer (CP-100 pulmonary monitor, Bicore, Irvine, CA, USA). Other data of respiratory mechanics were also obtained by CP-100 pulmonary monitor. Results : The imposed WOB was decreased by 37.5% during 0.7 L/min on flow triggering compared to $-2\;cmH_2O$ on pressure triggering and also decreased by 14% during $-1\;cmH_2O$ compared to $-2\;cmH_2O$ on pressure triggering (p < 0.05 in each). The PTP(Pressure Time Product) was also decreased significantly during 0.7 L/min on flow triggering and $-1\;cmH_2O$ on pressure triggering compared to $-2\;cmH_2O$ on pressure triggering (p < 0.05 in each). The proportions of imposed WOB in total WOB were ranged from 37% to 85% and no significant changes among different methods and sensitivities. The physiologic WOB showed no significant changes among different triggering methods and sensitivities. Conclusion : To reduce the imposed WOB, flow triggering with sensitivity of 0.7 L/min would be better method than pressure triggering with sensitivity of $-2\;cm\;H_2O$.

• The Pure and Applied Mathematics
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• v.17 no.2
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• pp.189-197
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• 2010

We give an upper bound for the estimation of the difference between both sides of the well-known H$\ddot{o}$lder's inequality. Moreover, an upper bound for the estimation of the difference of the integral form of H$\ddot{o}$lder's inequality is also obtained. The results of this paper are natural generalizations and refinements of those of [2-4].

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.346-351
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• 2016

Titanium dioxide ($TiO_2$) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and $H_2O$ as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the $TiO_2$ film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.330-332
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• 2013

소 분위기에서 플라즈마 표면 처리의 경우 기판 표면에 존재하는 수소와 탄소 유기물들이 산소와 반응하여 $H_2O$와 $CO_2$ 등으로 제거되며 표면에 오존 결합을 유도하여 표면 에너지를 증가시키는 것으로 알려져 있다. ZnO 나노구조물을 성장시키는 방법으로는 MOCVD (Metal-Organic Chemical Vapor Deposited), PLD (Pulsed Laser Deposition), VLS (Vapor-Liquid-Solid), Sputtering, 습식화학합성법(Wet Chemical Method) 방법 등이 있다. 그중에서도 습식화학합성법은 쉽게 구성요소를 제어할 수 있고, 저비용 공정과 낮은 온도에서 성장 가능하며 플렉서블 소자에도 적용이 가능하다. 그러므로 본 연구에서는 플라즈마 표면처리에 따라 표면에너지를 변화하여 습식화학합성법으로 성장시킨 ZnO nanorods의 밀도를 제어하고 photolithography 공정 없이 패터닝 가능성을 유 무를 판단하는 연구를 진행하였다. 기판은 Si wafer (100)를 사용하였으며 세척 후 표면에너지 증가를 위한 플라즈마 표면처리를 실시하였다. 분위기 가스는 Ar/$O_2$를 사용하였으며 입력전압 400 W에서 0, 5, 10, 15, 60초 동안 각각 실시하였다. ZnO nanorods의 seed layer를 도포하기 위하여 Zinc acetate dehydrate [Zn $(CH_3COO)_2{\cdot}2H_2O$, 0.03 M]를 ethanol 50 ml에 용해시킨 후 스핀코팅기를 이용하여 850 RPM, 15초로 5회 실시하였으며 $80^{\circ}C$에서 5분간 건조하였다. ZnO rods의 성장은 Zinc nitrate hexahydrate [$Zn(NO_3)_2{\cdot}6H_2O$, 0.025M], HMT [$C6H_{12}N_4$, 0.025M]를 deionized water 250 ml에 용해시켜 hotplate에 올리고 $300^{\circ}C$에서 녹인 후 $200^{\circ}C$에서 3시간 성장시켰다. ZnO nanorods의 성장 공정은(Fig. 1)과 같다. 먼저 플라즈마 처리한 시편의 표면에너지 측정을 위해 접촉각 측정 장치[KRUSS, DSA100]를 이용하였다. 그 결과 0, 5, 10, 15, 60 초로 플라즈마 표면 처리했던 시편이 각각 Fig. l, 2와 같이 $79^{\circ}$, $43^{\circ}$, $11^{\circ}$, $6^{\circ}$, $7.8^{\circ}$로 측정되었으며 이것을 각각 습식화학합성법으로 ZnO nanorods를 성장 시켰을 때 Fig. 3과 같이 밀도 차이를 확인할 수 있었다. 이러한 결과를 바탕으로 기판의 표면에너지를 제어하여 Fig. 4와 같이 나타나며 photolithography 공정없이 ZnO nanorods를 패터닝을 할 수 있었다. 본 연구에서는 플라즈마 표면 처리를 통하여 표면에너지의 변화를 제어함으로써 ZnO nanorods 성장의 밀도 차이를 나타냈었다. 이러한 저비용, 저온 공정으로 $O_2$, CO, $H_2$, $H_2O$와 같은 다양한 화학종에 반응하는 ZnO를 이용한 플렉시블 화학센서에 응용 및 사용될 수 있고, 플렉시블 디스플레이 및 3D 디스플레이 소자에 활용 가능하다.