• Title/Summary/Keyword: $H_2O$-Type

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A Study on the Bleaching Properties of Silk Fabric Using Vapor Type Ozone Treatment (기상 오존처리법을 이용한 견직물의 표백성에 관한 연구)

  • Kim, Jung-Min;Lee, Mun-Soo
    • Fashion & Textile Research Journal
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    • v.6 no.4
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    • pp.511-514
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    • 2004
  • We studied on the bleaching properties of silk fabric by vapor type ozone processing using ozone's strong oxidation instead of 28% $H_2O_2$ chemical treatment. When vapor type ozone processing was directly treated to fabrics retaining water to 50~70% pick up ratio, high concentration ozone was generated 14,000ppm(168 mg/h) approximately and finally its bleaching improved. The fabric's bleaching effect was improved because vapor type ozone generated the highest decomposition to oxidation of surface and inter molecules. The experiment revealed that fabric's bleaching was improved by change of the pick-up ratio of vapor type ozone processing. However, tensile strength and elongation were reduced by increase of time, and the time that was assumed as the most optimized time to minimize the reduction of fabric's tensile strength and elongation as well as maximizing the fabric's bleaching was 30 minutes.

$H_2$ plasma treatment effects on electrical and optical properties of the BZO (ZnO:B) thin films

  • Yoo, Ha-Jin;Son, Chan-Hee;Choi, Joon-Ho;Kang, Jung-Wook;Cho, Won-Tae;Park, Sang-Gi;Lee, Yong-Hyun;Choi, Eun-Ha;Cho, Guang-Sup;Kwon, Gi-Chung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.309-309
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    • 2010
  • We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.

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Dichloro, Alanine and S-Methylcysteine Cobalt (III) Complexes of Ethylenediamine-N,N$^\prime$-di-$\alpha$-isobutyric Acid

  • Jun, Moo-Jim;Park, Chang-Woo;Park, Youn-Bong;Cheon, Jin-Woo;Choi, Sung-Rack
    • Bulletin of the Korean Chemical Society
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    • v.11 no.4
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    • pp.354-357
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    • 1990
  • Synthesis of dichloro cobalt (Ⅲ) complexes of a flexible $N_2O_2-type$ tetradentate ligand, ethylenediamene-N,N'-di-${\alpha}$-isobutyric acid (eddib), has yielded two geometrical isomers, s-cis-$(Co(eddib)Cl_2)- and uns-cis-(Co(eddib)Cl_2)-.$ A series of substitution reactions, $(Co(eddib)Cl_2)^- {\to} (CO(eddib)Cl H_2O) {\to} (Co(eddib)CO_3)^- {\to} (Co(eddib(H_2O)_2)^+$ have been run for each of the two geometrical isomers. The reaction between the s-cis-(Co(eddib)Cl_2)^-$ complex and L-alanine (L-als) or S-methyl-L-cysteine (L-mcy) gave the meridional s-cis-[Co(eddib)(aa)) (aa = L-ala or L-mcy) complex. The S-methyl-L-cysteine was found to coordinate to cobalt (Ⅲ) ion via the nitrogen and oxygen donor atoms.

A Study on the Improvement of Sensing Ability of ZnO Varistor-type Gas Sensors (ZnO 바리스터형 가스 센서의 감도 향상에 관한 연구)

  • 한세원;조한구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.271-274
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    • 2000
  • Gas sensor materials capable of detecting hydrogen gases (H$_2$) or nitrogen oxides (NO$\_$x/, primarily NO and NO$_2$) with high sensitivity have attracted much interest in conjunction with the growing concern to the protection of global environments. Beside conventional sensor materials, such as semiconductors., conducting polymers and solid electrolytes, the potential of sensor materials with a new method for detecting hydrogen gases or nitrogen oxides gas has also been tested. The breakdown voltage of porous varistors shifted to a low electric field upon exposure to H$_2$ gas, whereas it shifted to a reverse direction in an atmosphere containing oxidizing gases such as O$_3$ and NO$_2$ in the temperature range of 300 to 600$^{\circ}C$. Furthermore, it was found that the magnitude of the breakdown voltage shift, i. e. the magnitude of sensitivity, was well correlated with gas concentration, and that the H$_2$ sensitivity was improved by controlling the composition of the Bi$_2$O$_3$ rich grain boundary phase. However, NO$\_$x/ sensing properties of porous varistors have not been studies in detail. The objective of the present study is to investigate the effect of the composition of the Bi$_2$O$_3$ rich grain boundary phase and other additive such as A1$_2$O$_3$ on the hydrogen gases (H$_2$) sensing properties of porous ZnO based varistors.

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Effective surface passivation of crystalline silicon by ALD $Al_2O_3$

  • Jang, Hyo-Sik;Sin, Ung-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.271-271
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    • 2010
  • 고효율 실리콘 태양전지를 제작하기 위하여 surface passivation, 레이저와 lithography기술들이 연구되어 지고 있다. 결정질 실리콘 태양전지의 기판의 두께가 점점 얇아지면서 surface-to-volume 비율이 증가되어 surface passivation은 매우 중요하다. surface passivation은 크게 2가지 방법으로 진행되고 있으다. 첫 번째는 Si의 dangling bond의 passivation과 surface recombination process 제어에 기초를 두고 있다. 일반적으로 박막을 이용한 실리콘 passivation은 $SiO_2$, SiN, a-Si, $Al_2O_3$박막 4가지가 이용되어 왔다. 본 연구에서는 p-type SoG기판위에 원자층 증착법(ALD)을 이용하여 $Al_2O_3$박막의 negative fixed charge의 internal electric field로 surface passivation을 연구하였다. TMA와 $H_2O/O_3$을 사용하여 ALD $Al_2O_3$를 10~30nm두께를 갖도록 증착하였다. 표면 처리 조건, $Al_2O_3$박막 두께, ALD 공정 조건과 후열처리등에 따른 실리콘의 특성, carrier lifetime변화를 측정하여 효과적인 field induced passivation을 제시하고자 한다.

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Development of a MEMS-based H2S Sensor with a High Detection Performance and Fast Response Time

  • Dong Geon Jung;Junyeop Lee;Dong Hyuk Jung;Won Oh Lee;Byeong Seo Park;Daewoong Jung
    • Journal of Sensor Science and Technology
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    • v.32 no.4
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    • pp.207-212
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    • 2023
  • H2S is a toxic and harmful gas, even at concentrations as low as hundreds of parts per million; thus, developing an H2S sensor with excellent performance in terms of high response, good selectivity, and fast response time is important. In this study, an H2S sensor with a high response and fast response time, consisting of a sensing material (SnO2), an electrode, a temperature sensor, and a micro-heater, was developed using micro-electro-mechanical system technology. The developed H2S sensor with a micro-heater (circular type) has excellent H2S detection performance at low H2S concentrations (0-10 ppm), with quick response time (<16 s) and recovery time (<65 s). Therefore, we expect that the developed H2S sensor will be considered a promising candidate for protecting workers and the general population and for responding to tightened regulations.

Analysis of Heavy Water Separation Cascade Using Bithermal ${H_2}$/$H_2$O Exchange Process

  • Ahn, Do-Hee;Paek, Seung-Woo;Lee, Han-Soo;Hongsuk Chung;Masami Shimizu
    • Proceedings of the Korean Nuclear Society Conference
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    • 1996.11b
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    • pp.571-576
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    • 1996
  • The 3-stage cascade composed of the multisection-type bithermal $H_2$/$H_2O$-exchange columns was suggested for heavy water separation. In order to study the separation characteristics for the cascade, a matrix equation with 18 simultaneous equations was composed and the concentrations and flow rates were calculated for the all parts of the cascade. Product D-concentration decreases and extraction yield increases with increasing cut in each stage, which is one of the principal parameters of the separation characteristics. The optimization of the 3-stage cascade can be made by case study using the matrix equation.

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The Dry Etching Characteristics in Contact Process (접촉공정에서 건식각 특성)

  • Lee, Chang-Weon;Kim, Jae-Jeong;Kim, Dae-Su;Lee, Jong-Dae
    • Journal of the Korean Applied Science and Technology
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    • v.16 no.1
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    • pp.105-115
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    • 1999
  • P-type의 단결정 실리콘 위에 $1000{\AA}$의 열산화막을 성장시킨후 $5500{\AA}$의 다결정 실리콘으로 증착된 시료를 가지고 $HBr/Cl_2/He-O_2$ 혼합기체로 식각할 때 시료의 식각 특성에 관한 $H_2-O_2$ 기체함량. RF 전력, 압력에 대한 영향을 XPS(X-ray photoelectron Spectroscopy)와 SEM(Scanning Electron Microscopy)으로 조사하였다. $HBr/Cl_2/He-O_2$ 혼합기체로 식각되는 동안 형성된 다결정 실리콘 식각속도는 $H_2-O_2$ 함량 증가에 따라 증가하였으며 식각잔유물은 RF 전력과 압력변화에 의해 영향은 받지 않는 것으로 나타났으며, 다결정 실리콘 측벽에서의 증착속도는 낮은 RF전력과 높은 압력에서 높게 나타났다. 다결정 실리콘 식각 잔유물의 결합에너지는 안정한 $SiO_2$인 열산화막의 경우보다 높으므로 식각 잔유물은 $SiO_{\chi}({\chi}>2)$의 화합결합을 가지는 산화물과 같은 잔유물로 생각된다.

Characteristics of Alumina-Supported TiO2 Composite Ultrafiltration Membranes Prepared by the Sol-Gel Method (Sol-Gel 법으로 제조한 알루미나 담체의 $TiO_2$ 복합 한외여과막의 특성)

  • 현상훈;최영민
    • Journal of the Korean Ceramic Society
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    • v.29 no.2
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    • pp.107-118
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    • 1992
  • Alumina supports for TiO2 ultrafiltration membrane coating were prepared by presintering disk-type preforms at 140$0^{\circ}C$. These supports showed uniform microstructures which had the apparent porosity of 40%, the pore size distribution in the range of 0.1~0.5${\mu}{\textrm}{m}$, and the water flux of 1400ι/$m^2$.h at the pressure difference of 10 atm. The optimum pH and concentration of the TiO2 sol for coating were 0.8 and 1.0 wt%, respectively, and sol particles were identified as rutile forms of 20 nm size. Crack-free alumina-supported rutile TiO2 membranes could be prepared through well controlled drying and heating the gel layer coated by the sol-gel dipping. The pore size of the TiO2 membranes heat-treated at 50$0^{\circ}C$ for 2 hrs was 30~80$\AA$, and their thickness varied from 1.1 to 3.8 ${\mu}{\textrm}{m}$ in accordence with the dipping time (4~40 min). The flux of water through this composite membrane at 10 atm was found to be in the range from 800 to 1100ι/$m^2$.hr depending on the dipping time (10~40 min). The membrane thickness increased linearly with the square root of the dipping time and the slope was 0.62 ${\mu}{\textrm}{m}$/{{{{ SQRT { min} }}.

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Reactions of Iridium(Ⅰ) Complexes with Acrylonitrile and Polymerization of Acrylonitrile with Iridium(Ⅰ)-Acrylonitrile Complex (이리듐(Ⅰ) 착물과 아크릴로니트릴의 반응 및 이리듐(Ⅰ)-아크릴로니트릴 착물에 의한 아크릴로니트릴의 중합반응)

  • Sang Ha Kim;Chong Sik Chin
    • Journal of the Korean Chemical Society
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    • v.27 no.5
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    • pp.340-344
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    • 1983
  • It has been found that both of the iridium (Ⅰ) complexes, Ir$(ClO_4$)(AN)(CO)$(Ph_3P)_2$(AN = $CH_2$CHCN, $Ph_3P = (C_6H_5)_3$P) and [Ir(AN)(CO)$(Ph_3P)_2]ClO_4$, react with $Cl^-$ to give IrCl(AN)(CO)$(Ph_3P)_2$, and [Ir(AN)(CO)$(Ph_3P)_2]ClO_4$ dissociates AN to yield Ir$(ClO_4)(CO)(Ph_3P)_2$ in the absence of excess AN added, and Ir$(ClO_4)(CO)(Ph_3P)_2$ reacts with $Cl^-$ to produce IrCl(CO)$(Ph_3P)_2$. It is suggested that the catalytic polymerization of AN with Ir$(ClO_4)(AN)(CO)(Ph_3P)_2$ proceeds through the formation of [(CO)(Ph_3P)_2$Ir(-CH=CHCN)(H)($CH_2$=CHCN)]Cl$O_4$ followed by the formation of iridium(alkyl)(alkenyl) type complex which undergoes a reductive elimination to produce the polymer of acrylonitrile.

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