• 센서학회지
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• 제1권1호
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• pp.5-12
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• 1992

팩시밀리용 1차원 영상감지소자로 사용 가능한 수소화된 비정질 실리콘 다층막을 RF 글로방전 분해법으로 제작하였다. ITO/i-a-Si:H/Al 구조는 양전극으로부터의 캐리어주입과 인듐확산으로 인한 암전류가 상대적으로 크므로 본 논문에서는 이 암전류를 억제하고, ITO/i-a-Si:H의 계면에 임듐확산으로 인한 광전변환특성의 저하를 막기 위하여 $SiO_{2}$ 혹은 $SiO_{x}N_{y}$막이 사이에 끼인 ITO/유전체/i-a-Si:H/p-a-Si:H/Al구조를 제작하였다. 이는 계면의 전장을 증가시켜 양호한 광전변환특성을 얻기 위한 것이다. $SiO_{2}$막의 두께가 $300{\AA}$이고 p-a-Si:H막의 두께가 $1500{\AA}$일 때 암전류는 0.1nA이하로 억제되고 광전류도 5V의 인가전압에서 20nA로 포화되었다. 또한 광이용률을 향상시키기 위해 $SiO_{x}N_{y}$막을 ITO와 함께 이중 반반사약으로 형성시켜 ITO/a-$SiO_{x}N_{y}$/i-a-Si:H/p-a-Si:H/Al구조의 다층막을 제작하였다. 이 때 $SiO_{x}N_{y}$막 및 p-a-Si:H막의 두께는 각각 $300{\AA}$ 및 $1500{\AA}$으로 하였다. 광도 $20{\mu}W/cm^{2}$ 및 인가바이어스 5V하에서 광전류는 30nA, 암전류는 0.08nA로 각각 좋은 특성을 나타내었으며 광전류도 5V게서 포화되었다. 또한 분광감도특성의 결과로부터 단층막의 최대감도를 나타내는 파장은 약 630nm이었으며 다층막의 경우는 약 560nm정도이었다. 제작된 다층막의 균일도는 약 5%의 오차를 가졌으며 광응답시간은 0.3msec였다.

• 한국세라믹학회지
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• 제30권3호
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• pp.222-228
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• 1993

In order to obtian TiO2 fine powder of high purity, the new method which is different from the sulfate process and the chloride one was employed. TiO2 was syntehsized by the reaction between elemental titanium particles and H2O2 solutiosn at 30~7$0^{\circ}C$, and then TiO2 powder was characterized using XRD, SEM, TEM, DTA and FT-IR. It was found that the initial reaction rate was fast at a high temperature due to the high generation of activated oxygen associated with thedecomposition of H2O2. However, the reaction was slowly proceeded at a low temperature due to slow decomposition of H2O2. In this experimental range, the optimum temeprature was ocnsidered to be about 5$0^{\circ}C$. The primary particles of the hydrous titanium dioxide (TiO2 gel) before aging were spherical, and their mean sizes were about 50nm. The similar shapes and sizes were observed with calcinatin at 40$0^{\circ}C$. The FT-IR spectrum of Ti-OH in the TiO2 gel powder appeared at around 3380cm-1, 1630cm-1 and 530cm-1. This gel powder was crystallized into the anatase type TiO2 at 300~40$0^{\circ}C$.

• Tribology and Lubricants
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• 제22권5호
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• pp.282-289
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• 2006

This paper is to investigate the wear behaviors of two type ceramics, $Al_{2}O_{3}\;and\;TiO_{2}$, by coated plasma thermal spray method under the lubricative environment. The lubricative environments are grease fluids, a general hydraulic fluids, and bearing fluids. The wear testing machine used a pin on disk type. Wear characteristics, which were friction force, friction coefficient and the specific wear rate, according to the lubricative environments were obtained at the four kinds of load and sliding velocity is 0.2 m/sec. After the wear experiments, the wear surfaces of the each test specimen were observed by a scanning electronic microscope.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.

• Restorative Dentistry and Endodontics
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• 제22권2호
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• pp.809-819
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• 1997

The purpose of this study was to develop an accurate frequency-dependent type apex locator. To compensate the impedence differences of different canal contents, voltage differences were pre-measured and stored for saline, HOsb1/$2O_2$ and NaOCl. The circuit was adjusted to recognize the different voltages of each solution, thereby the machine could automatically compensate the voltage differences. In the process of this study, the following informations were observed. 1. Most stable apical reading was obtained at 500Hz and 10kHz. 2. There were no differences in accuracy among three different frequency types, sign wave, triangular wave and rectangular wave(p>0.05). 3. Before the compensation of voltage differences, saline, H2O2 and NaOCl showed different readings at the apex even with the frequency-type (p<0.05). 4. After compensating the voltage difference, the accuracy was enhanced from + 0.42 to +0.32 in H2O2(p<0.05), from -0.34 to -0.12 in NaOCl(p<0.05).

• 대한화학회지
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• 제22권3호
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• pp.117-127
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• 1978

두점 A와 B에 위치한 Slater원자궤도함수의 spherical harmonics부와 지름부를 기준점 A를 중심으로 전개하여 공통좌표상에 기술하였다. 이 Slater 원자궤도함수의 전개식을 사용하여 two center overlap integral의 기본식을 유도하였으며 이 기본식을 이용하여 $CH_4,\;H_2O,\;NH_3,\;C_2H_6$ 및 $PH_3$ 분자의 two center overlap integral을 계산하였을 때 이 값이 Mulliken의 값과 일치하였다.

• 대한전자공학회논문지
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• 제26권6호
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• pp.30-37
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• 1989

Silane($SiH_4$), methane($CH_4$), diborane(B_2H_6)그리고 phosphine($PH_3$)을 이용하여 rf글로방전분해법으로 PIN형 a-SiC:H/a-Si:H 이종접합 태양전지를 제작하였다. $SnO_2/ITO$층 형성치 태양전지의 효율은 ITO 투명전극만의 경우보다 1.5% 향상되었다. 제작조건은 P층의 경우 $CH_4/SiH_4$의 비를 5로 하고 두께는 $100{\AA}$이었다. I층은 P층위에 증착하였으나 진성이 아니고 N형에 가깝다. 이 I층을 진성으로 바꾸기 위해서 0.3ppm의 $B_2H_6$를 $SiH_4$에 혼합하여 5000${\AA}$증착했다. 또한 N층은 $PH_4/SiH_4$의 비를 $10^{-2}$로 하여 $400{\AA}$ 증착시켰다. 그 결과 입사강도가 15mW/$cm^2$일 때 개방전압 $V_{oc}=O'$단락전류밀도 $J_{sc=14.6mA/cm^2}$, 충진율 FF=58.2%, 그리고 효율 ${eta}=8.0%$를 나타내었다. 빛의 반사에 의한 손실을 감소시키기 위하여 $MgF_2$를 유리기판위에 도포하였다. 이에 의한 효율은 0.5% 향상되어 전체적인 효율은 8.5%였다.

• Bulletin of the Korean Chemical Society
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• 제8권1호
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• pp.1-3
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• 1987

The crystal structure of $K_5Na_2[SbW_6O_{24}]{\cdot}12H_2O$ has been determined. Final R = 0.081 for 890 observed independent reflections collected by diffractometry. Crystal data as follows; trigonal, space group R3m, a = 9.794(1) ${\AA},\;{\alpha}$ = 84.72$(1)^{\circ}$, Z = 1. The heteropolyanion has a structure with point symmetry $D_{3d}$ (3m), of the ideal Anderson-type heteropolyanion. The Sb-W and W-W distances are 3.259(2) and 3.259(3) ${\AA}$. Three types of W-O ($W-O_t,\;W-O_b\;and\;W-O_c$) distances are 1.73(2), 1.95(4) and 2.20(3) ${\AA}$. The Sb-O distance is 1.97(3) ${\AA}$.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• The Korean Journal of Ceramics
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• 제1권4호
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• pp.179-184
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• 1995

Sodium superionic conductor (NASICON) compounds were prepared. The effects of sintering temperature and cooling rate on the formation and the distribution of crystalline NASICON and $ZrO_3$ second phase were investigated. In the von Alpen-type composition, the $ZrO_2$ second phase is in thermal equilibrium with the crystalline NASICON above $1320^{\circ}C$, but when cooled through 1260-$1320^{\circ}C$ crystalline NASICON was formed by reaction between $ZrO_2$ and liquid phase. Very slow cooling ($1^{\circ}C$/hr) to $1260^{\circ}C$ from sintering temperature decreased the amount of sodium which prevents the formation of the crystalline NASICON resulted high number of $ZrO_2$ grains near the surface of some sintered bodies. Maximum electrical conductivity of 0.200 ohm-1cm-1 was obtained at $300^{\circ}C$ for well-sintered samples with little $ZrO_3$. On the other hand, low conductivities were obtained for rapid-cooled samples which have less dense microstructure.