• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.89-90
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• 2007

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10% carrier gas $(H_2)$ concentrations using Nano Indentation. When carrier gas $(H_2)$ concentration was 10%, it has been proved that the mechanical properties, elastic modulus and hardness, of 3C-SiC are the best of them. In the case of 10% carrier gas concentration, Young's modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to $H_2$ concentrations was investigated by AFM (atomic force microscope), when $H_2$ concentration was 10%, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin film to MEMS applications, $H_2$ concentration's rate should increase to obtain better mechanical properties and surface roughness.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Environmental Engineering Research
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• v.13 no.1
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• pp.19-27
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• 2008

Simultaneous removal of ternary gases of $NH_3$, $H_2S$ and toluene in a contaminated air stream was investigated over 180 days in a biofilter. A commercially available inorganic/polymeric composite chip with a large void volume (bed porosity > 0.80) was used as a microbial support. Multiple microorganisms including Nitrosomonas and Nitrobactor for nitrogen removal, Thiobacillus thioparus (ATCC 23645) for $H_2S$ removal and Pseudomonas aeruginosa (ATCC 15692), Pseudomonas putida (ATCC 17484) and Pseudomonas putida (ATCC 23973) for toluene removal were used simultaneously. The empty bed residence time (EBRT) ranged from 60 - 120 seconds and the inlet feed concentration was $0.0325\;g/m^3-0.0651\;g/m^3$ for $NH_3$, $0.0636\;g/m^3-0.141\;g/m^3$ for $H_2S$, and $0.0918\;g/m^3-0.383\;g/m^3$ for toluene, respectively. The observed removal efficiency was 2% - 98% for $NH_3$, 2% - 100% for $H^2S$, and 2% - 80% for toluene, respectively. Maximum elimination capacity was about $2.7\;g/m^3$/hr for $NH_3$, > $6.4\;g/m^3$/hr for $H_2S$ and $4.0\;g/m^3$/hr for toluene, respectively. The inorganic/polymeric composite carrier required 40 - 80 days of wetting time for biofilm formation due to the hydrophobic nature of the carrier. Once the surface of the carrier was completely wetted, the microbial activity became stable. During the long-term operation, pressure drop was negligible because the void volume of the carrier was two times higher than the conventional packing materials.

• Microbiology and Biotechnology Letters
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• v.42 no.3
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• pp.307-311
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• 2014

This study investigated the effects of polyurethane foam on continuous hydrogen production from mixed wastes. Molasses was co-fermented with non-pretreated sewage sludge in a sequencing batch reactor. The results indicated that the addition of polyurethane foams as a microbial carrier in the reactor mitigated biomass loss at HRT 12 h, while most of the biomass was washed out during the operation period with no carrier. There was a stable hydrogen production rate of $0.4L-H_2/l/d$ in the carrier-sequencing batch reactor. Suspended biomass in the carrier-reactor indicated it possessed the highest specific hydrogen production rate ($241{\pm}4ml-H_2/g\;VSS/d$) when compared to that of biomass on the surface ($133{\pm}10ml-H_2/g\;VSS/d$) or inner carrier ($95{\pm}14ml-H_2/g\;VSS/d$).

• Journal of Hydrogen and New Energy
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• v.27 no.4
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• pp.412-420
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• 2016

Effect of $H_2S$ on reactivity of oxygen carrier was measured and discussed using fluidized bed reactor and SDN70 oxygen carrier. We could get 100% of fuel conversion and $CO_2$ selectivity even though $H_2S$ containing simulated syngas was used as fuel for reduction. Absorbed sulfur was released during oxidation and $N_2$ purge step after oxidation as $SO_2$ form. We could get 100% of fuel conversion and $CO_2$ selectivity during cyclic reduction-oxidation tests up to 10th cycle. However, only 6~7% of sulfur can be removed during oxidation and $N_2$ purge step and 93~94% of sulfur was accumulated in the oxygen carrier. Therefore we could conclude that total removal of sulfur was not possible. $SO_2$ emission during oxidation decreased as the number of cycle increased. Therefore we could expect that the reactivity of oxygen carrier will be decreased with time.

• Journal of Hydrogen and New Energy
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• v.30 no.2
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• pp.119-127
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• 2019

Reliable $H_2$ supply is necessary for entering a $H_2$ society. Among the various $H_2$ storage and transportation methods, liquid organic $H_2$ carrier (LOHC) is in the spotlight because of a lot of advantages compared to conventional one such as compressed $H_2$ and liquefied $H_2$. Therefore, we performed preliminary economic analysis of $H_2$ supply cost using LOHC for a $H_2$ production capacity of $300Nm^3\;h^{-1}$ employing itemized cost estimation and sensitivity analysis to evaluate economic viability of this technology in Korea.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.28-30
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• 2009

이종접합태양전지에서 p a-Si:H/c-Si의 p a-Si:H의 증착 조건인 $H_2/SiH_4$ 비율, $B_2H_6$의 농도를 변화 시키며 실험하여 이 따라 계면 특성 변화를 연구하였다. pa-Si:H의 $H_2/SiH_4$ 비율이 상승할수록 carrier lifetime이 증가하다 다시 감소하는 경향을 나타내었다. 이는 $H_2/SiH_4$의 비율 중 효과적으로 웨이퍼표면을 효과적으로 passivation하는 지점이 있는 것으로 보인다. $B_2H_6$의 농도는 상승할수록 carrier lifetime이 줄어드는 경향을 보였다. $B_2H_6$에서 농도가 올라감에 웨이퍼 표면의 defect로 작용했을 것으로 생각된다. 이에서 몇몇의 조건으로 태양전지를 제작한 결과 $H_2/SiH_4$ 비율에 따라서는 carrier lifetime은 효율에 그 영향이 미미한 것으로 조사되었고, $B_2H_6$의 농도가 낮을수록 개방전압은 상승하는 결과를 얻어 도핑 농도가 효율에 직접적인 형향을 주는 것으로 나타났다.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.150-151
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• 2002

In recent years, semi-metallic Bismuth (Bi) has attracted significant attention due to very large magnetoresistance (MR) at room temperature originating from long carrier mean free path l and small effective carrier mass m＊[1, 2]. In particular, the MR behavior and long carrier mean free path l in Bi thin films can be exploited for spintronic devices, e.g. magnetic field sensors and spin-valve transistors. In present work, we present the magnetotransport properties of the electroplated and sputtered Bi thin films in the temperature range 4-300 K. (omitted)