• Korean Journal of Materials Research
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• v.7 no.5
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• pp.417-422
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• 1997

본 연구에서는 LPCVD, PECVD, ECR plasma CVD방법을 이용하여 x선 노광 공정용 마스크의 투과막재료로써의 실리콘질화막의 증착과 그의 물성에 관하여 실험하였다. X선 노광 마스크용 투과막의 재질로써 요구되는 적정인장응력에 가지는 증착조건으로 실리콘질화막을 1$\mu\textrm{m}$정도의 두께로 증착하였으며 이 조건에서의 물성을 SIMS, XPS, ESR, AFM, spectrophoto-metry를 이용하여 비교 분석하였다. ECR plasma CVD방법으로 얻은 실리콘 질화막은 화학양론적 조성(Si/N=0.75)에 근접하는 막을 얻을 수 있었으며 표면 평활도와 가시광투과도가 가장 우수한 결과를 얻었다. 저온 증착법인 PECVD로 얻은 막은 Si/N비가 약 0.86정도이고 산소와 수소의 불순물함량이 가장 높게 나타났다. SiH$_{2}$CI$_{2}$를 이용한 LPCVD막의 경우는 Si-rich조성을 가지지만 수소 불순물의 함량이 가장 작게 나타났고 표면거칠기는 가장 나쁘게 나타났다. 그러나 위의 방법으로 얻은 실리콘 질화막의 최대 가시광투과도는 633nm파장에서 모두 90%이상의 값을 나타내었고, 또한 표면 평활도도 0.64-2.6nm(rms)로 현재 연구되고 있는 다른 X선 투과막재료보다 월등히 우수한 결과를 보였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.137-141
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• 2009

AZO transparent conductive thin films were grown on $SiO_2$/Si and glass substrates using diethylzinc (DEZ) and trimethylaluminium (TMA) as the precursor and $H_2O$ as oxidant by atomic layer deposition. The structural, electrical, and optical properties of the AZO films were characterized as a function of film thickness at a deposition temperature of $150^{\circ}C$. The AZO films with various thicknesses show well-crystallized phases and smooth surface morphologies. The 190-nm-thick AZO films grown on Coming 1737 glass substrates exhibit rms(root mean square) roughness of 8.8 nm, electrical resistivity of $1.5{\times}10^{-3}\;{\Omega}-cm$, and an optical transmittance of 84% at 600nm wavelength. Atomic layer deposition technique for the transparent conductive oxide films is possible to apply for the deposition on flexible polymer substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.693-696
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• 2004

For InGaP/GaAs HBT applications, we have developed characterized MIM capacitors with thin $1000{\AA}$ PECVD silicon nitride which were deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $300^{\circ}C$ and had the capacitance density of 600 pF/$mm^2$ with the breakdown electric fields of 3073 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about $1000{\AA}$ silicon nitride on the bottom metal was the lowest of 0.662 nmand breakdown electric fields were the highest of about 73 MV/cm.

• Korean Journal of Remote Sensing
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• v.9 no.2
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• pp.7-19
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• 1993

In stereo vision, when we use two parallel axis images, small portion of object is contained and B/H(Base-line to Height) ratio is limited due to the size of object and depth information is inaccurate. To overcome these difficulities we take a non-parallel axis image which is rotated $\theta$ about y-axis and match other parallel-axis image. Epipolar lines of non-parallel axis image are not same as those of parallel-axis image and we can't match these two images directly. In this paper, we transform the non-parallel axis image geometrically with camera parameters, whose epipolar lines are alingned parallel. NCC(Normalized Cross Correlation) is used as match measure, area-based matching technique is used find correspondence and 9$\times$9 window size is used, which is chosen experimentally. Focal length which is necessary to get depth information of given object is calculated with least-squares method by CCD camera characteristics and lenz property. Finally, we select 30 test points from given object whose elevation is varied to 150 mm, calculate heights and know that height RMS error is 7.9 mm.

• Journal of Korean Association for Spatial Structures
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• v.20 no.4
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• pp.63-71
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• 2020

The fluctuating wind pressure of the low rise ratio(f/D=0.1) for the elliptical dome roof was analyzed to compare it with the previous studies of circular dome roofs. Wind tunnel test were conducted on a total of 10 wind directions from 0° to 90° while changing wall height-span ratios(H/D=0.1-0.5). For this, meanCP, rmsCP and wind pressure spectrum were analyzed. The analysis result leads to find differences in the shape of the spectra in the spanwise direction and leeward of the elliptical dome according to the wind direction variations of the elliptical dome roof.

• Progress in Superconductivity and Cryogenics
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• v.10 no.1
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• pp.24-27
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• 2008

For the development of superconducting fault current limiters(SFCLs) having large current capacity, we fabricated an SFCL element that consists of Bi-2212 superconductor and Cu-Ni alloy tubes. First, Ag was plated on the surface of the Bi-2212 for the enhancement of soldering process. On the Ag-plated Bi-2212 tube, a Cu-Ni alloy tube was soldered using optimized solders and soldering conditions. The BSCCO/Cu-Ni composite was processed mechanically to have a helical shape for the improvement of the SFCL characteristics. The total current path of the SFCL element was 1330 mm long with 12 turns, and had critical current of 340 A at 77 K. Finally, we carried out the fault test using the fabricated SFCL element. It showed successful current limiting performance under the fault condition of 50 $V_{rms}$ and 5.5 kA. From the results, the rated voltage of the SFCL element was decided to be 0.4 V/cm, and the power capacity was 12 kVA at 77 K. The fabrication process of the SFCL and the fault test results will be presented.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.113.1-113.1
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• 2012

The characteristics of Doppler shifts in a quiet region of the Sun are investigated by comparing between the $H{\alpha}$ line and the Caii infrared line at 854.2 nm. A small area of $16^{\prime\prime}{\times}40^{\prime\prime}$ was observed for about half an hour with the Fast Imaging Solar Spectrograph (FISS) of the 1.6 meter New Solar Telescope (NST) at Big Bear Solar Observatory. The observed area contains a network region and an internetwork region, and identified in the network region are $H{\alpha}$ fibrils, Caii fibrils and bright points. We infer the Doppler velocity from each line profile at a point with the lambdameter method as a function of half wavelength separation ${\Delta}{\lambda}$. It is confirmed that the bisector of the spatially-averaged Caii line profile has an inverse C-shape of with a significant peak redshift of +1.8 km/s. In contrast, the bisector of the spatially-averaged $H{\alpha}$ line profile has a different shape; it is almost vertically straight or, if not, has a C-shape with a small peak blueshift of -0.5 km/s. In both the lines, the bisectors of bright network points are much different from those of other features in that they are significantly redshifted not only at the line centers, but also at the wings. We also find that the spatio-temporal fluctuation of Doppler shift inferred from the Caii line is correlated with those of the $H{\alpha}$ line. The strongest correlation occurs in the internework region, and when the inner wings rather than the line centers are used to determine Doppler shift. In this region, the RMS value of Doppler shift fluctuation is the largest at the line center, and monotonically decreases with ${\Delta}{\lambda}$. We discuss the physical implications of our results on the formation of the $H{\alpha}$ line and Caii 854.2 nm line in the quiet region chromosphere.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.817-824
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• 1996

Removal of Cu impurities on Si substrates using remote H-plasma was investigated. Si substrates were intentionally contaminated by 1ppm ${CuCI}_{2}$, standard chemical solution. To determine the optimal process condition, remote H-plasma cleaning was conducted varying the parameters of rf power, cleaning time and remoteness(the distance between the center of plasma and the surface of Si substrate). After remote H-plasma cleaning was conducted, Si surfaces were analysed by TXRF(total x-ray reflection fluorescence) and AFM(atomic force microscope). The concentration of Cu impurity was reduced by more than a factor of 10 and its RMS roughness was improved by more than 30% after remote H-plasma cleaning. TXRF analysis results show that remote H-plasma cleaning is effective in eliminating Cu impurity on Si surface when it is performed under the optimal process condition. AFM analysis results also verifies that remote H-plasma cleaning makes no damage to the Si surface. The deposition mechanism of Cu impurity may be explained by the redox potential(oxidation-reduction reaction potential) theory. Based on the XPS analysis results we could draw a conclusion that Cu impurities on the Si substrate are removed together with the oxide by a "lift-off" mechanism when the chemical oxide( which forms when Cu ions are adsorbed on the Si surface) is etched off by reactive hydrogen atoms.gen atoms.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.312-315
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• 2011

The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.158-163
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• 2012

In this work, we have fabricated the $TiO_2$ thin films on Si and glass, polymer insulator substrates as the self-cleaning coating of polymer insulator. $TiO_2$ films were deposited by RF magnetron sputtering method with $TiO_2$ ceramic target and $TiO_2$ films of 100 nm thickness were fabricated with various RF powers. We have investigated the optical and surface, and structural properties of $TiO_2$ films prepared with various RF powers. As a result, the value of the contact angle of $TiO_2$ thin film is increased with increasing RF power and the value of the rms surface roughness is increased. The transmittance is decreased with increasing RF power. These results indicate that the variation of the surface and optical properties of $TiO_2$ thin films is related to the sputtering effects by increasing RF power.