• 제목/요약/키워드: $H_{rms}$

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감습 고분자막이 코팅된 수정미소저울 습도센서 제작 및 특성연구 (Development of a hygroscopic polymer-coated QCM humidity sensor and its characteristics)

  • 권수용;김종철;최병일;남현수
    • 센서학회지
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    • 제14권6호
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    • pp.395-401
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    • 2005
  • A highly stable quartz crystal microbalance (QCM) that showed a stability of frequencies and exhibited a very low noise level has been developed. The long-term drift was <0.05 Hz/h over a period of 10 h, and the short-term rms (root mean square) noise was <0.015 Hz. Our QCM sensor was used as a humidity sensor employing a poly(methyl methacrylate) (PMMA) polymer film as a hygroscopic layer, which showed good characteristics in the relative humidity (RH) range of $2{\sim}90%$ RH. Comparing the characteristics of the QCM sensor with those of other types of humidity sensors employing PMMA film as a hygroscopic layer, and with other QCM sensors employing other hygroscopic layers is represented.

A Study on Physical Properties of BP

  • Hong, Kuen-Kee;Lee, Young-Won;Im, Jong-Hyun;Kim, Chul-Ju
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.88-90
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    • 2005
  • Boron Phosphide films were deposited on (111) Si substrate at 650 $^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 m$\ell$/min for $B_2H_6$, 60 m$\ell$/min for $PH_3$ and 1 $\ell$/min for $N_2$. After as grown the films were insitu annealed for 1hour in N$_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at 650$^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry.

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R.F Sputtering 법으로 증착한 ITO 박막의 미세구조와 전기$\cdot$광학적 특성 (Structure and Properties of Sputtered Indium Tin Oxide Thin Film)

  • 정영희;이은수;;;김규호
    • 한국표면공학회지
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    • 제38권4호
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    • pp.150-155
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    • 2005
  • Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

고해상도 심전계의 개발 (Development of a High-Resolution Electrocardiography)

  • 이호성;우응제;박승훈;이종민;박광석
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1996년도 춘계학술대회
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    • pp.179-183
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    • 1996
  • Most of the conventional electrocardiogaphies fail to detect signals other than P-QRS-T due to the limited SNR and bandwidth. High-resolution electrocardiography (HRECG) provides better SNR and wider bandwidth for the detection of micro-potentials with higher frequency components such as ventricual late potentials(LP). In this paper, we developed a HRECG using uncorrected XYZ lead. The overall gain of the amplifier is 4000 and the bandwidth is $0.5{\sim}300Hz$ without using 60Hz notch filter. Three 16-bit AH converters sample X, Y, and Z signals simultaneously with a sampling frequency of 2000Hz. Sampled data are transmitted to PC via a DMA-controlled serial communication channel using RS-485 and HDLC protocol. The noise level of the developed HRECG is less than $5{\mu}V_{rms,\;RTI}$. In order to further reduce the noise level, signal averaging technique is implemented utilizing template matching method. The SNR of the developed HRECG is high enough for the detection of LP.

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765kV 1회선 선로의 2차아크 모의결과 분석 (Analysis of Simulation Results for Secondary Arc in 765kV single transmission line)

  • 안상필;김철환;박남옥;주형준;심응보
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 추계학술대회 논문집 전력기술부문
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    • pp.36-38
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    • 2004
  • In many countries, including Korea, in order to transmit the more electric power, the higher transmission line voltage is inevitable. So, a rapid reclosing scheme is important for UHV transmission lines to ensure requirements for high reliability of main lines. But, because of the high voltage and long span of UHV lines, the secondary arc current flows across the fault point even after the interruption of the fault current. i.e. A critical aspect of reclosing operation is the extinction of the secondary arc since it must extinguish before successful reclosure can occur. In Korea transmission lines, it is scheduled to energize 765kV single transmission line(79km) between Sin-Ansung S/S and Sin-Gapyeong S/S at June 2006. Therefore this paper analyzes characteristics of the secondary arc extinction on 765kV single transmission line using EMTP. Simulation results shows that the average value of the secondary arc is $30A_{rms}$ and the auto-extinction time of it is longer at closer point to Sin-Gapyeong S/S.

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열 화학기상증착법을 이용한 BCN 박막의 합성과 전기적 특성 분석

  • 전승한;송우석;정대성;차명준;김성환;이수일;박종윤
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.255-255
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    • 2013
  • 최근 그래핀 연구와 더불어 2차원 구조의 나노소재에 대한 관심이 급증하면서 육각형의 질화붕소(hexagonal boron nitride; h-BN) 박막(nanosheet)이나 붕소 탄화질화물(boron caronitride; BCN) 박막과 같은 2차원 구조체에 대한 연구가 활발히 진행되고 있다. 그 중 BCN은 반금속(semimetal)인 흑연(graphite)과 절연체인 h-BN이 결합된 박막으로 원소의 구성 비율에 따라 전기적 특성을 제어할 수 있다는 장점이 있다. 따라서 다양한 나노소자로의 응용을 위한 연구가 활발히 진행되고 있다. 본 연구에서는 폴리스틸렌(polystyrene, PS)과 보레인 암모니아(borane ammonia)를 고체 소스로 이용하여 열화학 기상증착법을 이용하여 BCN 박막를 SiO2 기판 위에 직접 합성하였다. SEM과 AFM 관측을 통해 합성된 BCN 박막을 확인하였으며, RMS roughness가 0.5~2.6 nm로 매우 낮은 것을 확인하였다. 합성과정에서 PS의 양을 조절하여 BCN 박막의 탄소의 밀도를 성공적으로 제어하였으며, 이에 따라 전기적인 특성이 제어되는 양상을 확인하였다. 또한 합성온도 변화에 따른 BCN 박막의 전기적인 특성이 제어되는 양상을 확인하였다. 추가적으로 같은 방법을 이용하여 BCN 박막을 Ni 위에서 합성하여 SiO2 기판위에 전사 하였다. 합성된 BCN 박막의 구조적 특징과 화학적 조성 및 결합 상태를 투과전자현미경(transmission electron microscopy), X-선 광전자 분광법(X-ray photoelectron spectroscopy)을 통해 조사하였다.

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토목 구조물의 PZT Impedance 기반 손상추정기법 (PZT Impedance-based Damage Detection for Civil Infrastructures)

  • S. H. Park;Y. Roh;C. B. Yun;J. H. Yi
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 2004년도 봄 학술발표회 논문집
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    • pp.373-380
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    • 2004
  • This paper presents the feasibility of an impedance-based damage detection technique using piezoelectric (PZT) transducers for civil infrastructures such as steel bridges. The impedance-based damage detection method is based on monitoring the changes in the electrical impedance. Those changes in the electrical impedance are due to the electro-mechanical coupling property of the piezoelectric material and structure. An effective integrated structural health monitoring system must include a statistical process of damage detection that is automated and real time assessment of damage in the structure. Once measured, damage sensitive features from this impedance change can be statistically quantified for various damage cases. The results of the experimental study on three kinds of structural members show that cracks or loosened bolts/nuts near the PZT sensors may be effectively detected by monitoring the shifts of the resonant frequencies. The root mean square (RMS) deviations of impedance functions between before and after damages were also considered as a damage indicator. The subsequent statistical methods using the impedance signature of the PZT sensors were investigated.

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IBAD-MgO 기판 위 다양한 완충층들의 비교 연구 (Comparative study of various buffer layers on IBAD- MgO template)

  • 고경필;장기선;유상임;오상수;고락길;문승현;김호겸
    • 한국초전도ㆍ저온공학회논문지
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    • 제10권3호
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    • pp.5-8
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    • 2008
  • On highly-textured IBAD-MgO templates, we have tried to find proper buffer layers among various candidate materials, including $LaMnO_3$ (LMO), $La_2Zr_2O_7$ (LAO), $LaAlO_3$ (LAO), $LaGaO_3$ (LGO), $NdGaO_3$ (NGO), and $BaZrO_3$ (BZO). All buffer layers were deposited on the IBAD-MgO templates by KrF pulsed laser deposition(PLD). LAO layer showed an armorphous phase. LZO, LGO, and NGO layers showed polycrystalline growth. Only LMO and BZO layers exhibited c-axis oriented biaxially textured films. Optimally processed LMO buffer layer at deposition temperature of $750^{\circ}C$ and $PO_2$ of 100mTorr exhibited ${\triangle}{\phi}$ value of ${\sim}-5.2^{\circ}$ and RMS roughness of 5.6nm. Interestingly, BZO buffer layers with ${\triangle}{\phi}$ values of ${\sim}-6^{\circ}$ could be routinely produced over a wide PLD processing condition.

뇌졸중 후 편마비 환자의 Global Synkinesis 수준이 보행능력에 미치는 영향 (The Effects of Global Synkinesis Level on Gait Ability in Post-Stroke Hemiplegic Patients)

  • 임재헌;임영은;김수현;박경순;김태열
    • The Journal of Korean Physical Therapy
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    • 제20권3호
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    • pp.9-18
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    • 2008
  • Purpose: We determined the effect of global synkinesis(GS) on gait ability, muscle contraction, and central neuron action potentials in post-stroke hemiplegic subjects. Methods: Thirty hemiplegia patients were evaluated for walking ability, muscle contraction, central neuron action potential, and comparing differences between the H-GS(high-global synkinesis) group and L-GS(low-global synkinesis) group. To obtain the GS level, surface electromyography(EMG) data were digitized and processed to root mean square(RMS). Walking ability was tested with a modified motor assessment scale(MMAS), a 10 m walking test, timed up and go(TUG) test, and a Fugl-Meyer assessment(FMA). Muscle contraction ability was measured as maximal isometric contraction(MIC) peak, MIC slope, and MIC ramp up using mechanomyography(MMG). Central neuron action potential was measured as the H/Mmax ratio or V/Mmax ratio using EMG. The data were analyzed with t-tests to determine the statistical significance. Results: MMAS(p<0.01), 10 m walking velocity(p<0.01), TUG(p<0.01), FMA-HKA(Hip, Knee, Ankle)(p<0.05), FMA-coordination(p<0.05), MIC peak (p<0.05), MIC slope(p<0.01), and MIC ramp up(p<0.05) were significantly different between H-GS and L-GS, as was the V/Mmax ratio(p<0.05), but H/Mmax was not. Conclusion: Lower GS levels indicated better walking ability and motor function. Therefore, intervention programs should consider GS levels in gait training of chronic hemiplegia.

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PLD법으로 증착된 n-ZnO:In/p-Si(111) 이종접합구조의 특성연구 (The study of the characteristic of n-ZnO:In/p-Si(111) heterostructure using Pulsed Laser Deposition)

  • 장보라;이주영;이종훈;김준제;김홍승;이동욱;이원재;조형균;이호성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.355-356
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    • 2008
  • In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

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