• Title/Summary/Keyword: $H_{rms}$

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Experimental test on bridge jointed twin-towered buildings to stochastic wind loads

  • Ni, Z.H.;He, C.K.;Xie, Z.N.;Shi, B.Q.;Chen, D.J.
    • Wind and Structures
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    • v.4 no.1
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    • pp.63-72
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    • 2001
  • This paper presents results of a study on wind loads and wind induced dynamic response of bridge jointed twin-towered buildings. Utilizing the high-frequency force balance technique, the drag and moment coefficients measured in wind tunnel tests, and the maximum acceleration rms values on the top floor of towers, are analyzed to examine the influence of building's plan shapes and of intervals between towers. The alongwind, acrosswind and torsional modal force spectra are investigated for generic bridge jointed twin-towered building models which cover twin squares, twin rhombuses, twin triangles, twin triangles with sharp corners cut off, twin rectangles and individual rectangle with the same outline aspect ratio as the twin rectangles. The analysis of the statistical correlation among three components of the aerodynamic force corroborated that the correlation between acrosswind and torsional forces is significant for bridge jointed twin-towered buildings.

Determination of Rectifier Current Rating for DC Traction Power Substation (DC 전기철도변전소의 정류기용량산정)

  • Chung, S.G.;Lee, B.S.;Jeong, R.K.;Park, S.H.;Lee, S.J.
    • Proceedings of the KIEE Conference
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    • 2001.07b
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    • pp.1229-1232
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    • 2001
  • DC 전기철도 변전소의 정류기 용량선정은 온도상승 제한에 따른 전류정격 결정을 뜻한다. 본 논문에서는 온도등가전력의 개념을 도입하여 정류기의 rms 전류용량을 결정하는 이론적 방법을 제시한다. 또한 기존의 수계산방법과 컴퓨터 시뮬레이션 방법의 비교 검토를 통하여 개선점을 제시하였다.

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Design of a Low-Power Low-Noise Clock Synthesizer PLL (저전력 저잡음 클록 합성기 PLL 설계)

  • Park, J.K.;Shim, H.C.;Park, J.T.;Yu, C.G.
    • Proceedings of the KIEE Conference
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    • 2006.10c
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    • pp.479-481
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    • 2006
  • This paper describes a 2.5V, 320MHz low-noise and low-power Phase Locked Loop(PLL) using a noise-rejected Voltage Controlled ring Oscillator(VCO) fabricated in a TSMC 0.25um CMOS technology. In order to improve the power consumption and oscillation frequency of the PLL, The VCO consist of three-stage fully differential delay cells that can obtain the characteristic of high speed, low power and low phase noise. The VCO operates at 7MHz -670MHz. The oscillator consumes l.58mA from a 320MHz frequency and 2.5V supply. When the PLL with fully-differential ring VCO is locked 320MHz, the jitter and phase noise measured 26ps (rms), 157ps (p-p) and -97.09dB at 100kHz offset. We introduce and analysis the conditions in which ring VCO can oscillate for low-power operation.

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Deposition of $SiC_xN_y$ Thin Film as a Membrane Application

  • Huh, Sung-Min;Park, Chang-Mo;Jinho Ahn
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.1
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    • pp.39-43
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    • 2001
  • $SiC_{x}N$_{y}$ film is deposited by electron cyclotron resonance plasma chemical vapor deposition system using $SiH_4$(5% in Ar), $CH_4$ and $N_2$. Ternary phase $SiC_{x}N$_{y}$ thin film deposited at the microwave power of 600 W and substrate temperature of 700 contains considerable amount of strong C-N bonds. Change in $CH_4$flow rate can effectively control the residual film stress, and typical surface roughness of 34.6 (rms) was obtained. Extreme]y high hardness (3952 Hv) and optical transmittance (95% at 633 nm) was achieved, which is suitable for a LIGA mask membrane application.

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The Effect of Hydrogenation on the Elecrical Property and the Surface Roughness of Poly-$\textrm{Si}_{1-x}\textrm{Ge}_{x}$ Thin Film (수소화처리가 다결정 $\textrm{Si}_{1-x}\textrm{Ge}_{x}$박막의 전기적특성 및 표면거칠기에 미치는 영향)

  • Lee, Seung-Ho;Lee, Gyu-Yong;So, Myeong-Gi;Kim, Gyo-Seon
    • Korean Journal of Materials Research
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    • v.8 no.1
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    • pp.71-79
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    • 1998
  • RTCVD법으로 증착된 다결정 Si$_{1-x}$Ge$_{x}$박막에서 Ge조성 증가에 따른 결정립크기변화가 표면거칠기 및 cluster크기에 미치는 영향에 대해 알아본결과, Ge조성 증가에 따라 결정립크기가 증가했으며 증가된 결정립에 의해 Cluster 크기와 표면거칠기값(RMS)들이 증가함을 알 수 있었다. 또한 증착된 다결정 Si$_{1-x}$Ge$_{x}$박막을 RF power와 온도변화에 따라 Ar/H$_{2}$플라즈마를 이용한 수소화처리를 행하여, 수소화 효과와 표면거칠기값 그리고 비저항값 변화에 대해 조사하였다. 수소화처리 후 cluster크기와 표면거칠기값은 기판온도와 RF power 증가에따라 감소함을 알 수 있었으며 특히 기판온도 30$0^{\circ}C$에서는 비저항값이 상당히 증가하였다.

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Flank Wear Estimation Using Dynamic Cutting Force(l) (절삭력의 동적 성분을 이용한 플랭크마모의 평가(I))

  • Kwon, Y.K.;Oh, S.H.;Seo, N.S.
    • Journal of the Korean Society for Precision Engineering
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    • v.14 no.8
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    • pp.115-121
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    • 1997
  • The in-process detection of the tool wear is one of the most important technologies in completely auto- matic operation of machine tool. In this research, using the tools having flank wear, the dynamic compo- nent of cutting forces is considered to be available for identifying the cutting process. In order to investi- gate this relation in detail, the cutting forces in turning of workpiece made of aluminum were measured by dynamometer of piezoelectric type, and the dynamic components of cutting force were analyzed. The fre- quency analysis, probability density analysis and RMS analysis of the dynamic components were carried out independently. Through the experiments, the characteristics of the tool system have a large effect on the dynamic component of cutting forces. As a result, it is shown that the dynamic cutting force was able to detect flank wear accurately.

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Study on the high precision output of full-bride high-voltage inverter (Full-bridge 고전압 인버터의 출력전압 정밀제어에 관한연구)

  • Son, Y.G.;Kwon, S.J.;Jang, S.D.;Suh, J.H.;Oh, J.S.
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.214-216
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    • 2005
  • The PAL (Pohang Accelerator Laboratory) is persuading to construct a SASE-XFEL facility (PAL XFEL) that supplies coherent X-rays. The bright and stable electron beam is essential for the PAL XEL. The electron beams has to have an emittance of 1.0 mm-mrad, a peak current of 3 kA, and a low energy spread of 1.0 MeV. In order to provide reasonably stable SASE output, the RF stability of 0.02% rms is required for both RF phase and amplitude. This is a technologically challenging issue for PAL XFEL. An inverter technology is to be applied to charge the PFN of a new modulator. Therefore, a new inverter system should provide very stable charging performances. This paper presents the development of an ultra stable klystron-modulator with an inverter power supply.

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Analysis on the Gray Scale Capability of TFT-LCD using Three-dimensional Simulation (3차원적 시뮬레이션에 의한 TFT-LCD의 Gray Scale 성능 분석)

  • Kim, Sun-Woo;Park, Woo-Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.250-256
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    • 2007
  • We analyzed the effect of a pixel and all the inter-electrode capacitances in a unit pixel of TFT-LCDs on the gray scale capability. The pixel and all the inter-electrode parasitic capacitances were obtained from the tree dimensional profiles of potential distribution and molecular director considering lateral fields generated at the edge of the pixel. To obtain the RMS and kickback voltages of the pixel, we constructed an equivalent circuit of the panel containing all the parasitic capacitances. The calculation was performed though H-SPICE. As results, we confirmed that the pixel becomes smaller, the effect of parasitic capacitances on the gray scale capability becomes larger.

High Power Factor High Efficiency PFC AC/DC Converter for LCD Monitor Adapter (LCD 모니터의 어댑터를 위한 고역률 고효율 PFC AC/DC 컨버터)

  • Park K. H.;Kim C. E.;Youn M. J.;Moon G. W.
    • Proceedings of the KIPE Conference
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    • 2003.11a
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    • pp.85-89
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    • 2003
  • Many single-stage PFC(power-facto.-correction) ACHC converters suffer from the high link voltage at high input voltage and light load condition. In this paper, to suppress the link voltage, a novel high power factor high efficiency PFC AC/DC converter is proposed using the single controller which generates two gate signals so that one of them is used far gate signal of the flyback DC/DC converter switch and the other is applied to the Boost PFC stage. A 130w prototype for LCD monitor adapter with universal input $(90-265V_{rms})$ and 19.5V 6.7A output is implemented to verify the operational principles and performances. The experimental results show that the maximum link voltage stress is about 450V at 270Vac input voltage. Moreover, efficiency and power factor are over $84\%$ and 0.95, respectively, under the full load condition.

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Characterization of SrRuO3 Conducting Thin Films Grown on p-Si (100) Substrates by Metalorganic Chemical Vapor Deposition

  • Cuong Nguyen Duy;Yoon, Soon-Gil
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.1
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    • pp.14-17
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    • 2005
  • The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.