• 한국진공학회지
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• 제18권6호
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• pp.481-487
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• 2009

탄소나노필라멘트의 직경크기를 조절하기 위하여 증착 반응초기에 $SF_6$를 증착원료기체($C_2H_2$, $H_2$)에 주입하였다. 증착 원료 기체와 $SF_6$를 열화학기상증착시스템에서 시간에 따라 싸이클릭 유량 변조시켰다. 싸이클릭 유량 변조 프로세스와 기판의 온도에 따라 기판위에 증착된 탄소나노필라멘트들의 특성을 조사하였다. 싸이클릭 에칭기간에 $SF_6$를 투입하자 탄소나노필라멘트의 직경크기는 급격히 감소하였다. 이러한 탄소나노필라멘트 직경의 크기 감소 원인은 $SF_6$ 기체의 주입에 따른 에칭능력 향상에 기인하는 것으로 이해되었다.

• 한국세라믹학회지
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• 제36권8호
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• pp.853-858
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• 1999

To investigate the effect of H2 flow rate and TMS[Si(CH3)4] concentration on synthesizing ultrafine ${\beta}$-SiC powder by vapor phase reaction the experiment was performed at 1100$^{\circ}C$ of the reaction temperature under the condition of 200-2000 cc/min of H2 gas flow rate and 1-10% of TMS concentration respectively. The shape of ${\beta}$-SiC particles synthesized was spherical and the size of particles decreased and the distribution of particles was more uniform with increasing H2 gas flow rate. In this case Si powders were coexisted with ${\beta}$-SiC Pure and ultrafine ${\beta}$-SiC powders without Si were obtained under the condition of above 2% of TMS concentration and below 1500 cc/min of H2 gas flow rate.

• 한국식품조리과학회지
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• 제5권2호
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• pp.9-17
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• 1989

This study was carried out in order to study the emulsifying properties of kidney bean protein isolate. Kidney bean protein isolate was tested for the purpose of finding out the effect of pH, addition of NaCl, and heat treatment on the solbulity and emulsion capacity, emulsion stability, surface hydropobicity and emulsion viscosity. The results were summarized as follows. 1 The solubility of kidney bean protein isolate was affected by pH and showed the lowest value at pll 4.5 which is isoelectric point of kidney bean isolate. When the kidney bean protein isolate was heated, the highest value observed at pH 2 and pH 7 was 96.11%, 97.41% respectively. 2. The emulsion capacity of kidney bean protein isolate was not significantly different with each pH. With addition of NaCl, emulsion capacity decreased steadily. When heated thr highest value observed at pH 2 and pH 7 was 82.91 ml oil/100 mg protein ($60^{\circ}C$), 82.08 m1 oil/100 mg protein ($80^{\circ}C$) respectively. 3. The emulsion stability was significantly higher at pH 4.5 than that of pH 2 and pH 7 (p 0.05) When NaCl was added, emulsion stability was generally increased after 2hrs. When heated, the highest value observed at pH 2 and pH 7 was 21.25% ($80^{\circ}C$),23.7%($100^{\circ}C$) respectively after 2hrs. 4. Surface hydrophobicity increased sharply as 0.2 M NaCl was added to pH 4.5. When heated, the surface hydrophobicity increased as the temperature increased. 5. The highest value of emulsion viscosity was observed at pH 4.5 and pH 7 when 0.2 M NaCl was added. Under heat treatment, the highest value was 48,000 cps at pH 4.5 ($40^{\circ}C$). In the case of pH 7, the highest value was 105,000 cpa at $100^{\circ}C$.

• 한국세라믹학회지
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• 제27권5호
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• pp.625-630
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• 1990

Cordierite powders were prepared from Si(OC2H5)4, Al(OC3H7i)3 and Mg(OC2H5)2 by the sol-gel method. Two different methods were applied for producing fine and homogeneous powders. One is that Si(OC2H5)4 with a lowr rate of hydrolysis was partially hydrolyzed and then Al(OC3H7i)3 and Mg(OC2H5)2 were mixed and reacted. The other is based on the simultaneous hydrolysis of these metal alkoxides using i-C4H9OH which retards the rate of hydrolysis of Al(OC3H7i)3 and Mg(OC2H5)2. It was confirmed that ifne and homogeneous powders were obtained from both methods. Also these powders were calcined at four different temperatures during two hours. X-ray diffraction patterns show only ${\mu}$-cordierite phase at 1000$^{\circ}C$, ${\mu}$-cordierite and ${\alpha}$-cordierite phases at 1100-1200$^{\circ}C$ and ${\alpha}$-cordierite phase at 1300$^{\circ}C$ respectively.

• Molecules and Cells
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• 제28권6호
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• pp.545-551
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• 2009

Mitogen-activated protein kinases (MAPK) affect the activation of activator protein-1 (AP-1), which plays an important role in regulating a range of cellular processes. However, the roles of these signaling factors on hydrogen peroxide ($H_2O_2$)-induced cell death are unclear. This study examined the effects of $H_2O_2$ on the activation of MAPK and AP-1 by exposing the cells to $H_2O_2$ generated by either glucose oxidase or a bolus addition. Exposing BJAB or Jurkat cells to $H_2O_2$ affected the activities of MAPK differently according to the method of $H_2O_2$ exposure. $H_2O_2$ increased the AP-1-DNA binding activity in these cells, where continuously generated $H_2O_2$ led to an increase in mainly the c-Fos, FosB and c-Jun proteins. The c-Jun-$NH_2$-terminal kinase (JNK)-mediated activation of c-Jun was shown to be related to the $H_2O_2$-induced cell death. However, the suppression of $H_2O_2$-induced oxidative stress by either JNK inhibitor or c-Jun specific antisense transfection was temporary in the cells exposed to glucose oxidase but not to a bolus $H_2O_2$. This was associated with the disruption of death signaling according to the severe and prolonged depletion of reduced glutathione. Overall, these results suggest that $H_2O_2$ may decide differently the mode of cell death by affecting the intracellular redox state of thiol-containing antioxidants, and this depends more closely on the duration exposed to $H_2O_2$ than the concentration of this agent.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Bulletin of the Korean Chemical Society
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• 제32권7호
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• pp.2249-2252
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• 2011

Two new carborane complexes containing closo- or nido-carborane diphosphine ligands with the formula: complex $[Hg(7,8-(PPh_2)_2-7,8-C_2B_9H_{10})_2]$ $CH_2Cl_2$ (1) and $[Ag_2({\mu}-Cl)_2(1,2-(P^iPr_2)_2-1,2-C_2B_{10}H_{10})_2]$ (2) have been synthesized and characterized by elemental analysis, 1H and 13C NMR spectroscopy and X-ray structure determination. The X-ray structure analyses revealed that the carborane diphosphine ligand was degraded from closo-1,2-$(PPh_2)_2-1,2-C_2B_{10}H_{10}$ to nido-[$7,8-(PPh_2)_2-7,8-C_2B_9H_{10}]^-$ in complex 1, while the closo nature of the starting ligand $1,2-(P^iPr_2)_2-1,2-C_2B_{10}H_{10}$ was retained in complex 2. In either of the two complexes, the carborane diphosphine ligand was coordinated bidentately to the Hg(II) or Ag(I) center through its two phosphorus atoms, therefore forming a five-member cheating ring between the carborane ligand and the metal center. The coordination geometry of the metal atom is distorted tetrahedron formed by $P_4$ unit in complex 1 and $P_2Cl_2$ unit in complex 2, respectively.

• 방사성폐기물학회지
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• 제3권3호
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• pp.193-200
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• 2005

원전에서 발생된 농축폐액 방사성폐기물로부터 $^{14}C$ 및 $^{3}H$를 분리 정량하기 위하여 potassium persulfate와 sulfuric acid의 산화제를 이용하는 산화증류법을 적용하였으며, $^{14}C$와 $^{3}H$는 각각 $^{14}CO_2$ 기체와 HTO 액체로 순차적으로 분리되었다. 분리된 $^{14}C$와 $^{3}H$는 액체섬광계수기를 이용하여 계수되었고, 소광효과를 보정하여 방사능을 측정하였다. 산화증류법을 검증하기 위하여 $^{14}C$ 방사성 표준물은 $Na_{2}^{14}CO_{3}$와 $^{14}C-alcohol$, 그리고 $^{14}C-toluene$의 3종류, 그리고 $^{3}H$ 방사성 표준물은 HTO가 이용되었다. 또한 산화되기 어려운 방향족 화합물 중 $^{14}C-toluene$을 대상으로 가장 최적의 산화 조건을 조사하고자 황산용액 농도에 따라 FT-IR 피크 변화를 평가하였다. 방사성표준시료의 경우와 동일한 방법으로 원전 농축폐액 시료로부터 $^{14}C$와 $^{3}H$를 분리 검출하였는데, 그 결과 회수율은 $^{14}C$와 $^{3}H$가 각각 $8.35{\sim}l.38{\times}10^3$ Bq/g와 $2.46{\times}10^2{\sim}1.40{\times}10^4$ Bq/g로 검출되었다.

• Molecules and Cells
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• 제27권1호
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• pp.113-118
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• 2009

In this study, we have shown the transcriptional regulation of the human GD3 synthase (hST8Sia I) induced by valproic acid (VPA) in human neuroblastoma SK-N-BE(2)-C cells. To elucidate the mechanism underlying the regulation of hST8Sia I gene expression in VPA-stimulated SK-N-BE(2)-C cells, we characterized the promoter region of the hST8Sia I gene. Functional analysis of the 5'-flanking region of the hST8Sia I gene by the transient expression method showed that the -1146 to -646 region, which contains putative binding sites for transcription factors c-Ets-1, CREB, AP-1 and NF-${\kappa}B$, functions as the VPA-inducible promoter of hST8Sia I in SK-N-BE(2)-C cells. Site-directed mutagenesis and electrophoretic mobility shift assay indicated that the NF-${\kappa}B$ binding site at -731 to -722 was crucial for the VPA-induced expression of hST8Sia I in SK-N-BE(2)-C cells. In addition, the transcriptional activity of hST8Sia I induced by VPA in SK-N-BE(2)-C cells was strongly inhibited by SP600125, which is a c-Jun N-terminal kinase (JNK) inhibitor, and $G{\ddot{O}}6976$, which is a protein kinase C (PKC) inhibitor, as determined by RT-PCR (reverse transcription-polymerase chain reaction) and luciferase assays. These results suggest that VPA markedly modulated transcriptional regulation of hST8Sia I gene expression through PKC/JNK signal pathways in SK-N-BE(2)-C cells.

• 한국결정성장학회지
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• 제10권1호
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• pp.5-12
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• 2000

Silicon carbide(SiC)는 뛰어난 전기적, 열적, 물리적 특성 때문에 내환경 전자소자용 반도체 재료로 널리 연구되고 있다. 본 연구에서는 화학기상증착법으로 단결정 6H-SiC 동종박막을 성장시키고 이의 성장 특성을 조사하였다. 특히, 몰리브덴 (Mo)-plate를 이용하여 SiC를 코팅하지 않은 graphite susceptor를 사용한 6H-SiC 동종박막 성장조건을 성공적으로 얻었다. 대기압 상태의 RF-유도가열식 챔버에서 CVD성장을 수행하였고, <1120> 방향으로 $3.5^{\circ}$off-axis된 기판을 사용하였다. 성장 박막의 결정성을 평가하기 위하여 Nomarski 관찰, 투과율 측정 , 라만 분광, XRD, 광발광(PL) 분광, 투과전자현미경(TEM) 측 정 등의 방법을 이용하였다. 이상과 같은 실험을 통하여, 본 연구에서는 성장온도 $1500^{\circ}C$, C/Si flow ratio ($C_3H_8$ 0.2 sccm, $SiH_4$ 0.3 sccm)인 성장조건에서 결정성이 가장 좋은 6H-SiC 동종박막을 얻을 수 있었다.