• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.463-467
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• 2007

Structure and optical properties of ZnO epilayers grown on oxygen- and hydrogen-plasma treated sapphire substrates by plasma-assisted molecular beam epitaxy (denoted as samples A and B, respectively) have been investigated by various techniques. The crystal quality and structural properties of the surface for the ZnO epilayers were investigated by high-resolution X-ray diffraction and atomic force microscope. For investigating the optical properties of excitonic transition of ZnO, we carried out photoluminescence experiments as a function of temperature. The free exciton, bound exciton emission and their phonon replicas were investigated as a function of temperature from 10 to 300 K, and the intensity of excitonic PL peak emission from the sample A is found to be higher than that of sample B. From the results, we found that sample A has better crystal structure quality and optical properties as compared to sample B. The number of oxygen vacancies may be decreased in sample A, resulting in an enhancement of the crystal quality and a higher intensity of excitonic emission band as compared to sample B.

• Tribology and Lubricants
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• v.22 no.5
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• pp.282-289
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• 2006

This paper is to investigate the wear behaviors of two type ceramics, $Al_{2}O_{3}\;and\;TiO_{2}$, by coated plasma thermal spray method under the lubricative environment. The lubricative environments are grease fluids, a general hydraulic fluids, and bearing fluids. The wear testing machine used a pin on disk type. Wear characteristics, which were friction force, friction coefficient and the specific wear rate, according to the lubricative environments were obtained at the four kinds of load and sliding velocity is 0.2 m/sec. After the wear experiments, the wear surfaces of the each test specimen were observed by a scanning electronic microscope.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.173-176
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• 2009

We suggest a new protective layer for PDP consists of SrO and MgO double layer. This double layer structure protects SrO layer from the contamination by $H_2O$ or $CO_2$ in the air and enable SrO to play as the main cathode material. It was confirmed that the high secondary electron emission characteristics of SrO by Xe ion can bring considerable driving voltage reduction and improvement of luminance and luminous efficacy in PDP.

• Journal of the Korean Institute of Gas
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• v.16 no.6
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• pp.17-22
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• 2012

In this study, characteristics of reforming process of Automotive LPG fuel using plasma reactor are investigated. Because plasma reformer technology has advantages of a fast start-up and wide fuel/oxidizer ratio of operation, and reactor size is smaller and more simple compared to typical combustor and catalytic reactor, plasma reforming is suitable to the on-board vehicle reformer. To evaluate the characteristics of the reforming process, parametric effect of $O_2$/C ratio, reactant flow rate and plasma power on the process were investigated. In the test of varying $O_2$/C ratio from partial oxidation stoichiometry to combustion stoichiometry, conversion of LPG was increased but selectivity of $H_2$ decreased. The optimum condition of $O_2$/C ratio for the highest $H_2$ yield was determined to be 0.8~0.9 for 20~50 lpm. The result can be a guide to map optimal condition of reforming process.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.298-301
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• 2000

We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30％ O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.37-43
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• 2020

The effects of O₂ plasma pre-treatment and post-annealing conditions on the interfacial adhesion of Ti thin film and WPR dielectric were investigated using 90° peel test for fan-out wafer level packaging (FOWLP) redistribution layer (RDL) applications. Peel strength between Ti film and WPR dielectric decreased from 8.9±1.3 g/mm to 2.7±0.9 g/mm for variation of O₂ plasma pre-treatment time from 30s to 300s, which is closely related to C-O-C or C=O bonds breakage at the WPR dielectric surface due to excessive plasma pre-treatment conditions. During post-annealing at 150℃, the peel strength abruptly decreased from 0 h to 24 h, and then maintained constant until 100 h, which is also mainly due to the damage of WPR dielectric which is weak to high temperature. Therefore, the optimum plasma pre-treatment conditions on the surface of dielectric is essential to interfacial reliability of FOWLP RDL.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.265-268
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• 1991

In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.97-98
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• 2001

• Journal of the Korean Chemical Society
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• v.48 no.6
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• pp.663-666
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• 2004

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.69-72
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• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.