• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.56-62
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• 1997

Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.81-90
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• 2010

We introduce a novel and versatile approach for preparing self-assembled nanoporous multilayered films with antireflective properties. Protonated polystyrene-block-poly (4-vinylpyrine) (PS-b-P4VP) and anionic polystyrene-block-poly (acrylic acid) (PS-b-PAA) block copolymer micelles (BCM) were used as building blocks for the layer-by-layer assembly of BCM multilayer films. BCM film growth is governed by electrostatic and hydrogen-bonding interactions between the oppositely BCMs. Both film porosity and film thickness are dependent upon the charge density of the micelles, with the porosity of the film controlled by the solution pH and the molecular weight (Mw) of the constituents. PS7K-b-P4VP28K/PS2K-b-PAA8K films prepared at pH 4 (for PS7K-b-P4VP28K) and pH 6 (for PS2K-b-PAA8K) are highly nanoporous and antireflective. In contrast, PS7K-b-P4VP28K/PS2K-b-PAA8K films assembled at pH 4/4 show a relatively dense surface morphology due to the decreased charge density of PS2K-b-PAA8K. Films formed from BCMs with increased PS block and decreased hydrophilic block (P4VP or PAA) size (e.g., PS36K-b-P4VP12K/PS16K-b-PAA4K at pH 4/4) were also nanoporous. Furthermore, we demonstrate that the nanostructured electrochemical sensors based on patterning methods show the electrochemical activities. Anionic poly(styrene sulfonate) (PSS) layers were selectively and uniformly deposited onto the catalase (CAT)-coated surface using the micro-contact printing method. The pH-induced charge reversal of catalase can provide the selective deposition of consecutive PE multilayers onto patterned PSS layers by causing the electrostatic repulsion between next PE layer and catalase. Based on this patterning method, the hybrid patterned multilayers composed of platinum nanoparticles (PtNP) and catalase were prepared and then their electrochemical properties were investigated from sensing $H_2O_2$ and NO gas. This study was based on the papers reported by our group. (J. Am. Chem. Soc. 128, 9935 (2006); Adv. Mater. 19, 4364 (2007); Electro. Mater. Lett. 3, 163 (2007)).

• Journal of Hydrogen and New Energy
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• v.25 no.1
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• pp.59-71
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• 2014

An experimental study has been conducted to investigate the heat transfer characteristics of laminar syngas/air mixture with 10% hydrogen content impinging normally to a flat plate of cylinder. Effects of impinging distance, Reynolds number and equivalence ratio as major parameters on heat fluxes of stagnation point and radial direction were examined experimentally by the direct photos and data acquisitions from heat flux sensor. In this work, we could find the incurved flame behavior of line shaped inner top-flame in very closed distance between flat plate and burner exit, which has been not reported from general gas-fuels. There were 3 times of maximum and 2 times minimum heat flux of stagnation point with respect to the impinging distance for the investigation of Reynolds number and equivalence ratio effect. It was confirmed that the maximum heat flux of stagnation point in 1'st and 2'nd peaks increased with the increase of the Reynolds number due to the Nusselt number increment. There was a third maximum rise in the heat flux of stagnation point for larger separation distances and this phenomenon was different each for laminar and turbulent condition. The heat transfer characteristics between the stagnation and wall jet region in radial heat flux profiles was investigated by the averaged heat flux value. It has been observed that the values of averaged heat flux traced well with the characteristics of major parameters and the decreasing of averaged heat flux was coincided with the decreasing trend of adiabatic temperature in spite of the same flow condition, especially for impinging distance and equivalence ratio effects.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.388-393
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• 2000

Hydrogen-sensing behaviors of Pd- and Pt-SiC Schottky diodes, fabricated on the same SiC substrate, have been systematically compared and analyzed as a function of hydrogen concentration and temperature by I-V and$\DeltaI-t$ methods under steady-state and transient conditions. The effects of hydrogen adsorption on the device parameters such as the barrier height are investigated. The significant differences in their hydrogen sensing characteristics have been examined in terms of sensitivity limit, linearity of response, response rate, and response time. For the investigated temperature range, Pd-SiC Schottky diode shows better performance for H2 detection than Pt-SiC Schottky diode under the same testing conditions. The physical and chemical mechanisms responsible for hydrogen detection are discussed. Analysis of the steady-state reaction kinetics using I-V method confirmed that the atomistic hydrogen process is responsible for the barrier height change in the diodes.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.125-133
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• 2001

Conducting polymer sensors show high sensitivity when exposed to volatile organic compounds gases at room temperature. The 8 sensor array using by polypyrrole and polyaniline has been fabricated by chemical polymerization for measuring sensing characteristics of VOCs gases. Conducting polymer was polymerized by using distilled pyrrole, aniline as a monomer and ammonium persulfate (APS) as an oxidant and dodecylbenzene sulfonic acid (DBSA) as a dopant. Dedoped film was synthesized by reverse voltage and redoped film was synthesized by using 1-octanesulfonic acid sodium salt as another dopant in electrochemical cell. The sensitivity and reversibility were influenced by doping, dedoping, redoping and thickness for the polypyrrole and polyaniline. We investigated the relation between the structure of conducting polymer and sensitivity of these sensors through the analysis of scanning electron microscope (SEM), scanning probe microscope (SPM) and $\alpha$-step.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.19 no.3
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• pp.119-123
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• 2013

Simplified control logic was devised to fabricate and operate the modified atmosphere (MA) container of fresh produce equipped with gas-diffusion tube whose opening/closing was controlled in response to real time $O_2$ concentration. This is a simplified ramification of the previously developed control logic using both $O_2$ and $CO_2$ concentrations ([$O_2$] & [$CO_2$]). The developed logic was applied to and tested by a container system filled with spinach at $10^{\circ}C$ having optimum MA window of [$O_2$] of 7~10% and [$CO_2$] of 5~10%. It was shown that setting the proper on-off limit (11%) for $O_2$ control based on the assumed relationship $[O_2]+[CO_2]$=21% could attain the desired $CO_2$ concentration just below the upper tolerance limit ($[CO_2]_H$, 10%). The $O_2$ control point can be the lower tolerance limit or adjusted one (21-$[CO_2]_H$) depending on the commodity's MA requirement. The developed logic using single $O_2$ sensor could attain the equilibrated [$O_2$] of 11% with [$CO_2$] of 8~9% which was desired and similar to that of its predecessor ([$O_2$] of 9~10% with [$CO_2$] of 10%) using both $O_2$ and $CO_2$ sensors. Both MA containers (one only with single $O_2$ sensor control and one with $O_2$ and $CO_2$ sensors) could also keep the spinach quality without significant difference between them, but significantly better than perforated control package of air.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.462-462
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• 2009

$CeO_2$는 고체 산화물 연료전지 (SOFC, soild oxide fuel cell)의 전해질 재료와 CMP(Chemical Mechanical Polishing) 슬러리 재료, 자동차의 3원 촉매, gas sensor, UV absorbent등 여러 분야에서 사용되고 있다. 본 연구에서는 위의 활용범위 외에 $CeO_2$의 구조적 안정성과 빠른 $Ce^{3+}/Ce^{4+}$의 전환 특성을 이용하여 lithium ion battery의 anode 재료로서 전기화학적 특성을 알아보고자 실험을 실시하였다. $CeO_2$ 합성에 사용되는 전구체인 cerium carbonate의 형상 및 크기, 비표면적과 같은 물리화학적 특성이 $CeO_2$ 분말의 특성에 직접적인 영향을 주기 때문에 전구체의 합성 단계에서 입자의 특성을 조절하였다. 전구체 합성의 출발원료로 cerium nitrate hexahydrate 와 ammonium carbonate를 사용하였고 반응온도 및 농도 등을 변화시켜 입자의 형상 및 결정상을 fiber형태의 orthorombic $Ce_2O(CO_3)_2{\cdot}H_2O$와 구형의 hexagonal $CeCO_3OH$의 세리아 전구체를 합성하였다. 이를 $300^{\circ}C$에서 30분 동안 하소하여 전구체의 입자형상을 유지하는 cubic $CeO_2$를 합성하고 X-ray diffraction, FE-SEM, micropore physisorption analyzer 분석을 통하여 입자의 결정상과 형상, 비표면적 등을 비교 분석하고 $Li/CeO_2$ couple의 충,방전 용량과 수명특성을 비교 분석하여 $CeO_2$의 전기화학적 특성을 알아보았다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1637-1638
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• 2006

HVAC 시스템은 쾌적하고 깨끗한 운전환경을 만들어 줌으로써 운전자에게 향상된 안락성과 안전성을 제공한다. 이때 센서는 시시각각으로 변화하는 차실 내외의 환경변화에 대한 정보를 검출하여 HVAC 제어 유니트에 제공한다. 현재 HVAC 시스템에 사용되고 있는 후막 가스센서는 소자 크기와 소비전력이 크고, 제작공정이 까다로워 생산성이 낮은 단점이 있다. 이와 같은 문제점을 해결하기 위해서 최근에는 초소형화, 저소비전력, 대량생산에 의한 저가격화가 가능한 MEMS 가스센서의 연구개발이 활발히 진행되고 있다. 본 연구에서는 MEMS 구조체를 이용한 마이크로 가스센서를 설계 및 제작하였고, 감도특성을 고찰하였다. 가스 감지막은 금속산화물 페이스트를 스크린 프린팅 하는 종래의 방법 대신 MEMS 구조체에 적용 가능한 sol-gel 프로세스에 의해 형성하였다. 또 가스 감지전극과 micro-heater를 동일 평면상에 제작, 공정을 간소화하여 저가화를 시도하였다. MEMS 구조체 위에 제작된 Pt 박막 micro-heater의 인가전압에 따른 발열특성을 조사한 결과, 발열온도가 인가전압에 비례하는 이상적인 선형성을 나타내었으며, $300^{\circ}C$의 동작 온도에 도달하기 위해 65mW 이하의 저전력 동작이 가능하였다. 가스 센서의 감도특성 확인 실험은 CO 가스 10ppm, NO 가스 0.3ppm을 기준으로 수행되었으며, CO 및 NO에 대해 Rs(sensitivity, 가스반응저항/초기저항) 값은 각각 0.753 과 2.416로 우수한 성능을 나타내었다.