• Proceedings of the KIEE Conference
• /
• 2008.04a
• /
• pp.45-46
• /
• 2008

There are various polluting emissions related to the air quality such as $NO_x$, $CO_2$, CO, VOCs, $O_3$, $SO_2$, $CH_4$, $H_2S$, $NH_3$, etc. We need the system that reduces emission of these environment gases and detects risk factors in modern society. Therefore, if we use the USN(Ubiquitous Sensor Network) technology and a MAV(Micro Air Vehicle) Quad Rotor which can be hovering and moving free for setting up the environment gas sensing system, the realtime measurement on environment gases is facilitated and by extension, in application of traffic watchdog, forest fire surveillance and counter-terrorism efforts, we anticipate making better use of a Quad Rotor.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.2C no.6
• /
• pp.297-303
• /
• 2002

We have developed an on-line ultrasonic detector to monitor partial discharge in an operating transformer. The ultrasonic sensor has 150[KHz] resonance frequency and contains a pre-amplifier with 60[㏈] gain. The on-line ultrasonic detector has 50~300[KHz] frequency band-pass filter to remove electrical and mechanical noises from the transformer. This detector has an ultrasonic signal discrimination algorithm which discriminates ultrasonic signals due to partial discharge in a transformer. A moving average method of ultrasonic signal number was employed to effectively monitor the increasing trend of the partial discharge. This paper describes an experience of partial discharge detection in a 154[㎸] operating transformer using an ultrasonic detector. With regards to gas analysis in oil, C2H2 gas was produced with a warning level in this transformer We detected ultrasonic signals on the transformer steel wall, and estimated the position of partial discharge. With further inspection, we found carbonized marks due to partial discharge on the supporting bolt which fastens the windings.

• Journal of Sensor Science and Technology
• /
• v.11 no.2
• /
• pp.77-83
• /
• 2002

In order to get low cost and portability, semiconductor gas sensor need to have low operating temperature and high sensitivity. $Fe_2O_3$ based sensors which were doped with metal oxide catalysts($MoO_3$, $V_2O_5$, $TiO_2$, and CdO) were fabricated by screen printing method. To improve electrical stability of sensors, the $Fe_2O_3$ sensors were annealed in $N_2$ at $700^{\circ}C$ for 2 hours. The $V_2O_5$ doped $Fe_2O_3$ sensor showed about $80{\sim}90%$ sensitivity at alcohol 1,000 ppm and have good selectivity to hydrocarbon gas and tobacco odors. The fabricated sensor and PIC-chip were employed for portable alarm system.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.63.1-63.1
• /
• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

• Journal of the Korean Society for Heat Treatment
• /
• v.24 no.1
• /
• pp.31-36
• /
• 2011

$TiO_2$ films were deposited on a glass substrate with RF magnetron sputtering and then surface of $TiO_2$ films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. $TiO_2$ films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900 eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of $TiO_2$ and $TiO_2$/ZnO films is increased proportionally and $TiO_2$ films that electron beam irradiated at 900 eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of $TiO_2$ films.

• Journal of the Korean Physical Society
• /
• v.73 no.10
• /
• pp.1437-1443
• /
• 2018

In this work, $SnO_2$ modified with reduced graphene oxide (rGO) and carbon nanotubes (CNTs) separately and combined sensitized by using the co-precipitation method and their sensing behavior toward ethanol vapor at room temperature were investigated. An interdigitated electrode (IDE) gold substrate is very expensive compared to a fluorine doped tin oxide (FTO) substrate; hence, we used the latter to reduce the fabrication cost. The structure and the morphology of the studied materials were characterized by using differential thermal analyses (DTA) and thermogravimetric analysis (TGA), transmission electron microscope (TEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Brunauer-Emmett-Teller surface area and Barrett-Joyner-Halenda (BJH) pore size measurements. The studied composites were subjected to ethanol in its gas phase at concentrations from 10 to 200 ppm. The present composites showed high-performance sensitivity for many reasons: the incorporation of $SnO_2$ and CNTs which prevents the agglomeration of rGO sheets, the formation of a 3D mesopourus structure and an increase in the surface area. The decoration with rGO and CNTs led to more active sites, such as vacancies, which increased the adsorption of ethanol gas. In addition, the mesopore structure and the nano size of the $SnO_2$ particles allowed an efficient diffusion of gases to the active sites. Based on these results, the present composites should be considered as efficient and low-cost sensors for alcohol.

• Journal of Sensor Science and Technology
• /
• v.6 no.3
• /
• pp.200-206
• /
• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

• Korean Journal of Materials Research
• /
• v.28 no.8
• /
• pp.466-473
• /
• 2018

Nickel oxide(NiO) thin films, nanorods, and carbon nanotube(CNT)/NiO core-shell nanorod structures are fabricated by sputtering Nickel at different deposition time on alumina substrates or single wall carbon nanotube templates followed by oxidation treatments at different temperatures, 400 and $700^{\circ}C$. Structural analyses are carried out by scanning electron microscopy and x-ray diffraction. NiO thinfilm, nanorod and CNT/NiO core-shell nanorod structurals of the gas sensor structures are tested for detection of $H_2S$ gas. The NiO structures exhibit the highest response at $200^{\circ}C$ and high selectivity to $H_2S$ among other gases of NO, $NH_3$, $H_2$, CO, etc. The nanorod structures have a higher sensing performance than the thin films and carbon nanotube/NiO core-shell structures. The gold catalyst deposited on NiO nanorods further improve the sensing performance, particularly the recovery kinetics.

• Journal of the Korean Magnetics Society
• /
• v.8 no.6
• /
• pp.380-387
• /
• 1998

In this paper, a sensor material with Fe/Zr multilayer thin film, in which the change in the magnetization and strain with hydrogenation is maximized, were developed. Compositionally modulated (CM) Fe/Zr multilayers with a $Fe_{80}Zr_{20}$ composition and modulation wavelengths ($\lambda$) $3~50{\AA}$ were deposited by sequentially sputtering (RF diode) elemental Fe and Zr targets. The films were electrolytically hydrogenated to select the optimum Fe/Zr multilayers that show the maximum increases in the magnetization and strain with hydrogenation. The changes in the magnetic properties of the thin films after hydrogenation, were measured using a hysteresis graph and a vibrating sample magnetometer (VSM), and the strains induced in the films by hydrogenation were also measured using a laser heterodyne interferometer (LHI). The optimum sensor material selected was incorporated in a fiber-optic hydrogen sensor (that can sense indirectly amount of hydrogen injected) by depositing it directly on the sensing arm of a single-mode fiber Michelson interferometer. The developed sensor holds significant promise for non-destructive test evaluation (NDE) applications because it is expected to be useful for detecting easily and accurately the subsurface corrosion in structural systems.

• Journal of Sensor Science and Technology
• /
• v.22 no.3
• /
• pp.175-180
• /
• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.