• Korean Journal of Materials Research
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• v.7 no.10
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• pp.845-850
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• 1997

수직형 FHD증착법을 사용하여 SiO$_{2}$, SiO$_{2}$-P$_{2}$O$_{5}$, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 실리카 유리미립자를 형성하였으며, SEM, ICP-AES, XRD, TGA-DSC을 사용하여 그 특성을 분석하였다. XRD측정을 통해, 미립자 형성시 사용된 화염온도(130$0^{\circ}C$-150$0^{\circ}C$)와 기판온도(-20$0^{\circ}C$)가 SiO$_{2}$-P$_{2}$O$_{5}$계 미립자를 비정질상태로 형성하였으며, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$와 SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 미립자에서는 B$_{2}$O$_{3}$, BPO$_{4}$, GeO$_{2}$의 결정성피크들을 관찰하였다. TGA-DSC 열분석을 통해, SiO$_{2}$와 SiO$_{2}$-P$_{2}$O$_{5}$는 온도변화에 따른 질량변화가 없었으며, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계의 경우 질량감소를 동반한 유리전이에 따른 분자이완현상 및 결정화나 회복반응을 나타내고 있다. 질량감소는 미립자가 결정상태일때 가속되는 경향을 나타냈으며, DSC열분석을 통해 SiO$_{2}$, SiO$_{2}$-P$_{2}$O$_{5}$, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 유리미립자들의 고밀화가 시작되는 온도를 각각 1224$^{\circ}C$, 1151$^{\circ}C$, 953$^{\circ}C$, 113$0^{\circ}C$에서 관찰하였다.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.99-104
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• 1992

The permeability vs. temperature curve, the loss factor and the microstructure of a commercial Mn-Zn ferrites were investigated by X-ray diffractometer, SEM and LCR meter, where the additives, such as $SnO_{2}$ and $GeO_{2}$, were added to the main composition. Their wt% were 0.05, 0.3 and 1.0, respectively. When the content of additives increased, the SPM (Secondary Peak Maximum) of the permeability moved from $80^{\circ}C$ to below the room temperature. This movement, without the significant change of the microstructure, is because Sn and Ge, having the different ionic radius, were soluble in the matrix. There was no variation of the permeability with the frequency up to 100 kHz. And the loss factor showed the maximum value at 10 kHz.

• Journal of Acupuncture Research
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• v.19 no.4
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• pp.190-199
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• 2002

Objective : This study was performed to determine if Scutellaria balicalensis Georgi extract (SbGE) prevents oxidant-induced membrane transport dysfunction in renal tubular cells. Methods : Membrane transport function was estimated by measuring $Na^+$-dependent inorganic phosphate transport in opossum kidney (OK) cells. $H_2O_2$ inhibited phosphate transport in a dose-dependent manner. Results : The inhibitory effect of $H_2O_2$ was significantly prevented SbGE over concentration range of 0.005-0.05%. $H_2O_2$ caused ATP depletion, which was prevented by SbGE. $H_2O_2$ induced the loss of mitochondrial function as evidenced by decreased MTT reduction and its effect was prevented by SbGE. The $H_2O_2$-induced inhibition of phosphate transport was not affected by a potent antioxidant DPPD, but the inhibition was prevented by an iron chelator deferoxamine, suggesting that $H_2O_2$ inhibits $Na^+$-dependent phosphate transport via an iron-dependent nonperoxidative mechanism in renal tubular cells. Conclusion : These data suggest that SbGE may exert the protective effect against oxidant-induced membrane transport dysfunction by a mechanism similar to iron chelators in renal epithelial cells. However, furher studies should be carried out to find the active ingredient(s) of SbGE that exerts the protective effect.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.99-106
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• 1983

This experiment has been carried out for the purpose of investigating the effect of $Ga_2O_3$ and $GeO_2$ additivies on sintering of magnesium oxide over the temperature range of 130$0^{\circ}C$~150$0^{\circ}C$. The effect of calcining temperature on the bulk densities of fired compacts prepared from this material was observed MgO powder has been obtained by calcining extra reagent grade magnesium carbonate(basic fired) at 90$0^{\circ}C$ for 30 minutes $Ga_2O_3$and GeO2 were added in the ratio of 1, 2, and 3 wt% to MgO and mixed with calcined MgO. The specimens were prepared by compression with pressure of $700kg/cm^2$ than fired at 130$0^{\circ}C$~150$0^{\circ}C$ for 0-5hrs. Sintering behaviour and microstructure of the fired specimens were examined. The optimum calcination temperature of magnesium carbonate was 90$0^{\circ}C$. Densification rates obeyed the equation D=K in t+c. Theoretical density in the case of addition of $Ga_2O_3$ was 23.1 kcal/mole in the case of the additive $GeO_2$ was 14.176kcal/mole. This low value would appear to support a machanism of grain boundatry diffusion The range of average grain size in the case of addition of $Ga_2O_3$ and $GeO_2$ was 21$\mu\textrm{m}$-31$\mu\textrm{m}$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.529-532
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• 2002

We experimentally investigate the evolution of nanosecond Stokes pulses in a single-pass Raman laser pumped by a Q-switched Nd: YAG laser at 1064 nm. As a Raman medium, a GeO$_2$-doped graded-index multimode fiber of 220m long is used. We demonstrate that efficient generation of several Stokes components with 1.5-2.7 nanosecond pulsewidth is obtained by varying the input pump energy.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.30-38
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• 1998

A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.190-190
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• 2009

We report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It was found that the epitaxial growth of a MgO film on Ge could be realized at a low growth temperature of $125{\pm}5^{\circ}C$ and the MgO matches the Ge with a cell ratio of $\sqrt{2}$:1 which renders MgO rotated by $45^{\circ}$ relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bcc CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100] || MgO(001)[110] || Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is $1430{\pm}20$ emu/cc, which is comparable to the value of bulk CoFe.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.208-214
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• 2019

The glass of $BaO-GeO_2-La_2O_3-ZnO$ system with a transmittance of more than 75 % at mid-wave infrared (MWIR) region in the range of $3{\mu}m$ to $5{\mu}m$ is manufactured and its property is evaluated. After selecting construction that can melt glass through flow button test, $BaO-GeO_2-La_2O_3$ system where 10 mol%, 20 mol% of ZnO were added respectively were melted at $1350^{\circ}C$ for 1 hour and $BaO-GeO_2-La_2O_3$ system of glass was manufactured. Among them, with 20 mol% of ZnO, 16 mol% BaO-56 mol% $GeO_2-8mol%$ $La_2O_3-16mol%$ ZnO system of glass was found to has less than $660^{\circ}C$ of glass transition temperature, more than 1.70 of refractive index, and more than 530 of knoop hardness. Therefore, it is concluded that glass of $BaO-GeO_2-La_2O_3-ZnO$ system of glass with 20 mol% ZnO has good melting conditions at low temperatures and excellent optical properties, thus, can be utilized for special optical materials field.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.416-427
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• 1994

The changes of crystallinity and microstructure and the $Si_{1-x}Ge_x/Sio_2$ interfaces of $Si_{1-x}Ge_x$ alloys deposited on amorphous $SiO_{2}$ were studied as a function of deposition temperature. The crystallinity, microstructure, and compositional uniformity of $Si_{1-x}Ge_x$ alloys deposited on the SiOl at different temperature were investigated by X-ray diffraction and transmission electron microscopy. And $Si_{1-x}Ge_x/Sio_2$ interface were investigated by high-resolution transmission electron microscopy. The $Si_{0.7}Ge_{0.3}/Sio_2$ films were deposited on amorphous $SiO_{2}$ at $300^{\circ}C,400^{\circ}C,500^{\circ}C,600^{\circ}C,$ and $700^{\circ}C$ by Si-MBE. In the film deposited at $300^{\circ}C$, only amorphous phase were observed. In the film deposited at $400^{\circ}C$, both amorphous and polycrystalline films were observed. Both phases were deposited simultaneously, but, at initial film growth, amorphous phase prevailed over polycrystalline phase. As the film thickness increased, the fraction of polycrystalline phase increased. At $500^{\circ}C$, thin amorphous layer was observed at lOnm from $SiO_{2}$ surface. In the films deposited at higher than $600^{\circ}C$, only crystalline phase were observed. Polycrystalline films had columnar structure. Compositional uniformity for deposited films were good regardless of deposition temperature. The interfaces of $Si_{1-x}Ge_x/Sio_2$ were flat, whatever polycrystal or amorphous was deposited on $SiO_{2}$.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.25-29
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• 1998

$SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.