• 제목/요약/키워드: $Gd_2O_3

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분무열분해 공정에서 붕소 농도에 따른 Gd2O3:Eu 형광체의 GdBO3:Eu 형광체로의 전환 (Transition of Gd2O3:Eu Phosphor to GdBO3:Eu Phosphor with Boron Concentration in the Spray Pyrolysis)

  • 구혜영;정대수;주서희;홍승권;강윤찬
    • 한국재료학회지
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    • 제16권3호
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    • pp.163-167
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    • 2006
  • The transition of europium-doped gadolinium oxide phosphor to gadolinium borate phosphor with the concentration of boron in the spray pyrolysis was investigated. The particles prepared from spray solution below 10 wt% boric acid of prepared phosphor had crystal structure of $Gd_2O_3:Eu$ phosphor, in which the crystallinity of the particles decreased with increasing the boron concentration. A single phase $GdBO_3:Eu$ phosphor particles were prepared from spray solution above 50 wt% boric acid of prepared phosphor. The phosphor particles prepared from spray solution with 20 wt% boric acid of prepared phosphor had no XRD peaks of $Gd_2O_3:Eu$ and $GdBO_3:Eu$ Therefore the phosphor particles prepared from spray solution with 20 wt% boric acid of prepared phosphor had the lowest photoluminescence intensity under ultraviolet and vacuum ultraviolet. $GdBO_3:Eu$ and $Gd_2O_3:Eu$ phosphor particles prepared from spray solutions with proper concentrations of boric acid had good photoluminescence intensity under vacuum ultraviolet. The morphology of the phosphor particles were strongly affected by the concentrations of boric acid added into spray solution.

페치니법에 의한 $Y_{2-x}Gd_xO_3:Eu$ 형광체의 제조와 발광 특성 (Preparation and Luminescence Properties of $Y_{2-x}Gd_xO_3:Eu$ Phosphors by Pechini Method)

  • 이동규;이진화;안병철;전상배
    • 한국응용과학기술학회지
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    • 제23권3호
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    • pp.207-214
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    • 2006
  • $Y_{2-x}Gd_xO_3:Eu$, phosphors for plasma display panel(PDP), were prepared by Pechini method which use yttriun chloride, gadolinium chloride, and europium oxide as starting materials. This method is a different way to the synthesis of europium(Eu)-doped phosphors, and it consists of the formation of a polymeric resin obtained by polyesterification between metal chelate compounds and a polyfunctional alcohol. This needs lower temperature than solid-state synthetic method. The prepared $Y_{2-x}Gd_xO_3:Eu$ phosphor particles had spherical shape and coherence. The luminescence intensity of $Y_{2-x}Gd_xO_3:Eu$ phosphor particles increased according to the increase of gadolinium(Gd) content(to 0.8mol%), and $Y_{1.2}Gd_{0.8}O_3:Eu$ phosphors had the highest luminescence intensity under vacuum ultra violet(VUV) excitation. The optimum concentration of Eu in the phosphor and optimum calcination temperature was 3wt% and $1100^{\circ}C$. The prepared phosphors were consist of particle, and its size was between 100nm and 150nm. Among the different polyfunctional alcohols, diethylene glycol(DEG) improved the luminescence intensities of phosphors more than other additives. The Pechini method proved that it is demonstrated to be suitable for the synthesis of phosphors used in PDP.

Sintering of a Mixture of $UO_2$ and $Gd_2 O_3$ Powders Doped With $Cr_2 O_3-SiO_2$

  • Kim, Keon-Sik;Song, Kun-Woo;Kang, Ki-Won;Yang, Jae-Ho;Kim, Jong-Hun
    • Nuclear Engineering and Technology
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    • 제33권4호
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    • pp.386-396
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    • 2001
  • Mixtures Of AUC-UO$_2$and Gd$_2$O$_3$ Powders doped With Cr$_2$O$_3$ or Cr$_2$O$_3$-SiO$_2$ were Pressed and sintered at 1730 t in hydrogen gas witk various water-vapor contents. The density of UO$_2$- 6wt% Gd$_2$O$_3$ pellets can be increased from 91% TD to 94.5% TD in 1 vol% $H_2O$-H$_2$ gases by the addition of 0.02wt% Cr$_2$O$_3$-(0.01~0.04) wt% SiO$_2$. The magnitude of density increase is much larger in (1~3 vol%) $H_2O$-H$_2$ gases than in 0.05 vol% $H_2O$-H$_2$ gas. The densification of U0$_2$- Gd$_2$O$_3$ compact is significantly delayed in the temperature range between 1300 and 1500 t , but that of compacts with Cr$_2$O$_3$-SiO$_2$ is not. The role of Cr$_2$O$_3$ and SiO$_2$ in densification is discussed.

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$BaHfO_3$ 완충층을 사용한 IBAD MgO 기판 위에 제조된 고임계전류밀도의 $GdBa_2Cu_3O_y$ 박막 (High-$J_c$ $GdBa_2Cu_3O_y$ films on $BaHfO_3$ buffered IBAD MgO template)

  • 고경필;이정우;고락길;문승현;오상수;유상임
    • 한국초전도ㆍ저온공학회논문지
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    • 제13권1호
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    • pp.6-11
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    • 2011
  • The $BaHfO_3$ (BHO) buffer layer on the IBAD MgO template was turned to be effective for a successful fabrication of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films with high critical current density ($J_c$). Both the BHO buffer layers and GdBCO films were prepared by pulsed laser deposition (PLD). The effects of the PLD conditions, including substrate temperature ($T_s$), oxygen partial pressure ($PO_2$), and deposition time on the in-plane texture, surface roughness, and microstructures of the BHO buffer layers on the IBAD MgO template were systematically studied for processing optimization. The c-axis oriented growth of BHO layers was insensitive to the deposition temperature and the film thickness, while the in-plane texture and surface roughness of those were improved with increasing $T_s$ from 700 to $800^{\circ}C$. On the optimally processed BHO buffer layer, the highest $J_c$ value (77 K, self-field) of 3.68 $MA/cm^2$ could be obtained from GdBCO film deposited at $780^{\circ}C$, representing that BHO is a strong candidate for the buffer layer on the IBAD MgO template.

Gd2O3 첨가에 따른 AC PDP 보호막용 MgO 박막의 광학적.전기적 특성 (Effects of Gd2O3 Addition on Optical and Electrical Properties of MgO Films as a Protective Layer for AC PDPs)

  • 김창일;임은경;박용준;이영진;백종후;최은하;정석;김정석
    • 한국전기전자재료학회논문지
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    • 제20권7호
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    • pp.620-625
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    • 2007
  • The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

구형 가돌리늄화합물 입자 제조 (Preparation of Spherical Gadolinium Compound Particles)

  • 김응호;최청송;정경채;박진호;장인순
    • 한국세라믹학회지
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    • 제30권7호
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    • pp.563-570
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    • 1993
  • Spherical, monosized gadolinium compound was prepared by the reaction of Gd(NO3)3 solution with decomposition products of urea in the solution at evaluated temperature. Chemical composition and calcination characteristics of spherical gadolinium compound prepared were investigated by X-ray IR and TG-DTA. The approximate chemical composition of the spherical particle precipitated was Gd(OH)CO3.1.5H2O. Gd(OH)CO3.1.5H2O was calcined to monoclinic type Gd2O3 at 115$0^{\circ}C$ via cubic type Gd2O3 near $600^{\circ}C$. The effects of various parameters such as pH, temperature, concentration ratio of urea to gadolinium precusor, ageing time, and others material (CCl3COOH and HOCNH2) in stead of urea as precipitating agent on the properties of the resulting precipitates were studied systematically.

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CeO2에서의 Gd2O3 및 Sm2O3첨가량변화에 따른 특성변화 (Effect of Gd2O3 and Sm2O3 Addition on the Properties of CeO2)

  • 최광훈;이주신;류봉기
    • 한국전기전자재료학회논문지
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    • 제16권11호
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    • pp.979-986
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    • 2003
  • Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.

Enhanced flux pinning property of GdBa2Cu3O7-x films by ferromagnetic surface decoration

  • Song, C.Y.;Oh, J.Y.;Ko, Y.J.;Lee, J.M.;Kang, W.N.;Kang, B.
    • 한국초전도ㆍ저온공학회논문지
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    • 제22권2호
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    • pp.21-25
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    • 2020
  • We investigated the flux pinning property of GdBa2Cu3O7-x (GdBCO) films on top of La0.7Sr0.3MnO3 (LSMO) nanoparticles deposited by a surface decoration. Both GdBCO films and LSMO nano particles were deposited by pulsed laser deposition and the number of laser pulses were varied from 80 to 320 in order to control the density of the LSMO nanoparticles. The magnetization data at 77 K showed that the critical current density (Jc) was enhanced in all of the GdBCO films with LSMO nanoparticles and that the Jc enhancement was found to be inversely proportional to the LSMO nanoparticle density. Structural analyses revealed that LSMO nanoparticles induce a compressive strain in the GdBCO films resulting in a disordering in the CuO2 plane. Therefore, the enhanced flux pinning property in the GdBCO with LSMO nanoparticles was attributed to the competing effect between the increase of pinning centers and the increase of compressive strain in the superconducting phase.