• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.332-332
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• 2012

분자선 에피탁시(molecular beam epitaxy)를 이용하여 GaAs 기판에 성장한 InAs 양자점(QDs: quantum dots)은 성장 온도, 압력, As/In의 공급비 등의 성장 조건에 따라 다른 변수(parameter)를 갖는다. 따라서 성장변수에 따라 양자점의 모양과 크기, 밀도가 달라져 균일한 양자점 형성에 어려움이 있어 많은 연구가 진행되고 있다. 예를 들면 In-interruption 법으로 성장한 양자점의 특성이 S-K mode (Stranski-Krastanov mode)로 성장한 양자점에 비해 광학적 특성이 향상되었다. 본 연구에서는 In pre-deposition (IPD) 법으로 성장한 InAs/GaAs 양자점의 광학적 특성을 PL(photoluminescence)와 TRPL (time-resolved PL)을 이용하여 분석하였다. InAs QDs 시료들은 In과 As 공급시간을 각각 1초와 19초 (QD1), 2초와 18초 (QD2), 3초와 17초 (QD3)로 조절하여 성장하였으며, In이 공급되는 시간 동안 As shutter를 차단하여 As 공급을 중단하였다. In과 As의 차단 없이 S-K mode로 성장한 시료를 기준시료로 사용하였다 (QD0). AFM (atomic force microscope) 측정결과, In 공급시간이 1초에서 2초로 증가할 때, 양자점의 밀도와 종횡비(aspect ratio)가 증가하였고, 양자점의 균일도가 증가하였다. 그러나 QD3 시료는 QD1 시료에 비해 밀도와 종횡비, 균일도가 감소하였다. 10 K에서 PL 피크는 In 공급 시간이 증가할 때, 970 nm에서 1020 nm로 적색편이 하였고 반치폭 (FWHM: full width at half maximum)은 75 meV에서 85 meV로 증가하였다. QD2 시료의 PL 피크 에너지가 가장 낮았고, 가장 강한 PL 세기를 보였다. IPD 시간이 증가함에 따라 PL 피크에서 측정한 PL 소멸은 점차 빨라졌다. IPD 기법으로 성장한 양자점의 빠른 PL 소멸은 양자점 밀도와 종횡비 향상에 의한 파동함수 중첩의 증가와 구속 에너지 증가에 의한 것으로 설명된다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.26.2-26.2
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• 2011

최근 주목 받고 있는 산화아연(ZnO)은 레이저 다이오드, 가스 센서, 자외선 센서, 투명전극 등으로 다양하게 사용될 수 있어 연구개발이 폭 넓게 이루어지고 있는 상황이다. 특히, 3.3 eV의 direct bandgap 에너지를 가지고 있는 ZnO은 현재 자외선센서로 많이 적용되고 있는 물질인 GaN계열을 대체할 수 있는 유망한 물질로 주목 받고 있다. 공기중의 산소나 수분의 표면반응에 의한 자외선 측정을 하는 ZnO을 나노선으로 만들게 되면, 표면대비 부피비가 박막에 비해 급격히 증가하기 때문에 민감도가 커지고 반응시간이 짧아지게 된다. 본 연구에서는 자외선센서의 민감도와 반응성을 향상시키기 위해 전기화학적 합성법을 통해 ZnO의 박막과 나노선을 제조하였다. 사진공정을 통해 3 ${\mu}m$의 간격을 가진 금(Au) 전극을 만든 후, 전기화학적 합성법을 통해 아연이온이 포함된 용액에서 정전류를 흘려보내 아연 또는 ZnO을 증착시킬 수 있었다. 첫 번째로 ZnO을 양쪽 Au 전극에서 동시에 증착하여 두 박막이 접합하였고, 두 번째는 100nm의 지름을 가진 Ni 나노선를 전극 양쪽에서 자석을 통해 자기장을 형성해 정렬시키고 ZnO을 Au 전극과 Ni 나노선에 증착한 후, Ni 나노선를 산화시킴으로써, ZnO 나노구조를 형성하였다. 세 번째로는 Au 전극 양쪽에 아연을 전기화학적 합성을 하여 박막으로 증착하고 고온에서 산화과정을 통해 100 nm 이하의 지름을 가진 ZnO 나노선를 형성하였다. 이렇게 만들어진 세가지 구조의 ZnO의 나노구조와 결정성은 주사전자현미경과 X선 회절 분석기를 통해 측정하였으며, 자외선에 대한 민감도와 반응성은 365 nm의 파장을 가진 자외선발생기와 소스미터장치를 통해 측정하였다. 박막에서 100 nm 이하의 지름을 가진 ZnO 나노선로 갈 수록 자외선에 대한 민감도와 반응성이 향상되었다.

• Transactions on Electrical and Electronic Materials
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• v.18 no.3
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• pp.155-158
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• 2017

In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.10
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• pp.43-50
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• 1995

A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

• Proceedings of the Membrane Society of Korea Conference
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• 2004.05a
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• pp.94-97
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• 2004

Micro/nano-sized L $a_{0.6}$S $r_{0.4}$Co $O_{3-}$$\delta$/ particles are considered to improve oxygen permeability in highly selective inorganic oxygen separation membrane. A L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membrane with perovskite structure is fabricated by a conventional solid-state reaction. As the oxygen permeation flux of the L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membrane was lower than commercial gas separation membranes, we coated the L $a_{0.6}$S $r_{0.4}$Co $O_{3-}$$\delta$/ particles to enhance the oxygen permeation flux. It has been demonstrated that the effective area of reactive free surface is an important factor in determining the effectiveness of the introduction of coating layer for oxygen permeation. The introduction of micro/nano L $a_{0.6}$S $r_{0.4}$Co $O_{3-}$$\delta$/ particles was very effective for increasing oxygen flux, as the flux was as much as 2 to 6 times higher than that of an uncoated L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membrane.\delta$/ membrane.>/ membrane.brane.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.71-75
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• 2023

In this study, inorganic perovskite films with different compositions were grown by thermal chemical vapor deposition depending on the substrate and their optical properties were compared. Inorganic perovskite crystals were grown on SiO₂/Si and c-Al₂O₃ substrates using CsBr and PbBr₂, respectively, under the same growth conditions. Cs₄PbBr₆-CsPbBr₃ crystallites were grown on the SiO₂ with polycrystalline structure, while a CsPbBr₃ (100) dominant thin film was formed on the c-Al₂O₃ substrate with single crystal structure. From the photoluminescence measurement, CsPbBr₃ showed typical green emission centered at 534 nm with a full width at half maximum (FWHM) of about 91 meV. The Cs₄PbBr₆-CsPbBr₃ mixed structure exhibits blue-shifted emission at 523 nm with a narrow FWHM of 63 meV and a fast decay time of 6.88 ns. These results are expected to be useful for application in photoelectric devices such as displays, solar cells, and light sensors based on inorganic metal perovskites.

• Journal of Chest Surgery
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• v.37 no.4
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• pp.307-312
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• 2004

With the development of cardiac surgical technique, we need more prosthetic materials for repairing the intra- and extracardiac defects. Although bovine pericardial bioprosthesis treated with glutaraldehyde (GA) solution is one of the most popular materials, it has a drawback of later calcific degeneration. The purpose of this study is to investigate the effectiveness of several materials and methods in reducing the calcific degeneration of bovine pericardium. Material and Method: Forty square-shaped pieces of bovine pericardia were fixed in 0.625% GA solution with 4 g/L MgCl$_2$ㆍ6$H_2O$ as a control group (group 1). Other 40 pieces pre-treated with 1 % SDS(group 2) and 40 pieces post-treated with 8% glutamate (group 3) and 2% chitosan (group 4) were also fixed in the same GA solution. Other 40 pieces pre-treated with 1% SDS and post-treated with 8% glutamate and 40 pieces post-treated with 2% chitosan were also fixed in the same GA solution (group 5, 6). The pericardial pieces were implanted into the belly of 40 Fisher 344 rats subdermally and were extracted 1 month, 2 months, 3 months, and 6 months after the implantation. With an atomic absorption spectrophotometry, we measured the calcium amount deposited and examined the tissue with microscope. Result: The calcium deposition in 1 month was less in group 2, 5, 6 than that in group 1 (p＜0.05). It was most prominent in group 5 (p＜0.01). This finding continued in 2 month. In 3 month, the calcium deposition was less in group 3 and 4 as well as group 2, 5, and 6 than in group 1. In 6 month, the calcium deposition in group 2, 3, 4, 5, and 6 was less than that in group 1 and the difference was more than that of 1, 2, and 6 month. The microscopic calcium deposition was also less in group 2 and 5. Calcium deposition developed in the whole layer of pericardium, beginning with the surrounding the collagen fiber and progressing inwardly. Conclusion: Pre-treatment with SDS, post-treatment with glutamate or chitosan, and SDS pre-treatment and post-treatment with glutamate or chitosan were effective in reducing the calcium deposition in bovine pericardium. Moreover, the combined method of SDS pre-treatment and glutamate post-treatment was more effective than other methods.

• ETRI Journal
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• v.32 no.2
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• pp.339-341
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• 2010

The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single-mode silicon waveguide, which is necessary for a wavelength-division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of $3.7{\mu}m$. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 ${\mu}m$), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.29-34
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• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.