• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1213-1218
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• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.341-346
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• 2014

Ga-doped ZnO (GZO) single layer and $SiO_2/GZO$ bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of $SiO_2/GZO$ thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron's irradiation energy. The $SiO_2/GZO$ films irradiated at 900 eV were showen the lowest resistivity of $7.8{\times}10^{-3}{\Omega}cm$. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of $58^{\circ}$ in this study.

• Archives of Pharmacal Research
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• v.26 no.11
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• pp.929-936
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• 2003

Methanol extract (MeOH), n-hexane (Hx), chloroform ($CHCl_3$), ethyl acetate (EA), butanol (BuOH) and aqueous ($H_2O$) fractions of Eucommiae Cortex including geniposidic acid (GA), geniposide (GP) and aucubin (AU) were tested for their therapeutic efficacy on osteoporosis. The contents of GA, GP and AU in the cortex and leaf of Eucommia ulmoides Oliver were quantified by HPLC. The effect of Eucommiae Cortex on the induction of growth hormone (GH) release was studied by using rat pituitary cells. The proliferation of osteoblast-like cells increased by herbal extracts was assayed using a tetrazolium (MTT), alkaline phosphatase (ALP) activity, and [$^3H$]-proline incorporation assays. The inhibition of osteoclast was studied by using the coculture of mouse bone marrow cells and ST-2 cells. As a result, the GA, GP and AU were present in the cortex more than in the leaf of E. ulmoides Oliver. The MeOH (1mg/mL), Hx, $CHCl_3$ and EA fractions (each 20 $\mu$ g/mL) had potent induction of GH release. The $CHCl_3$ exhibited the potent proliferation of osteoblasts. The AU, GP and GA were increased proliferation of osteoblasts. In addition, GA ($IC_{50}: 4.43{\times}10^{-7}$M), AU and GP were significantly inhibited proliferation of osteoclast. In summary, it is thought that the components in a part of the fractions of Eucommiae Cortex participate in each step of mechanism for activating osteoblast to facilitate osteogenesis, and suppress osteoclast activity to inhibit osteolysis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• The Journal of the Petrological Society of Korea
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• v.21 no.2
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• pp.89-112
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• 2012

The Korean Peninsula consists of three Precambrian blocks: Nangrim, Gyeonggi and Yeongnam massifs. Here we revisited previous stratigraphic relationships, largely based on new geochronologic data, and investigated the crustal evolution history of the Precambrian massifs. The Precambrian strata have been usually divided into lower crystalline basements and upper supracrustal rocks. The former has been considered as Archean or Paleoproterozoic in age, whereas the latter as Paleoproterozoic or later. However, both are revealed as the Paleoproterozoic (2.3-1.8 Ga) strata as a whole, and Archean strata are very limited in the Korean Peninsula. These make the previous stratigraphic system wrong and require reconsideration. The oldest age of the basement rocks can be dated as old as Paleoarchean, suggested by the occurrence of ~3.6 Ga inherited zircon. However, most of crust-forming materials were extracted from mantle around ~2.7 Ga, and produced major portions of crust materials at ~2.5 Ga, which make each massif a discrete continental mass. After that, all the massifs belonged to continental margin orogen during the Paleoproterozoic time, and experienced repeated intracrustal differentiation. After the final cratonization occurring at ~1.9-1.8 Ga, they were stabilized as continental platforms. The Nangrim and Gyeonggi massif included local sedimentary deposition as well as igneous activity during Meso-to Neoproterozoic, but the Yeongnam massif remained stable before the development of Paleozoic basin.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.36-37
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.27-27
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• 1997

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.221.1-221
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.133-134
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• 2004