• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• ETRI Journal
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• 제28권6호
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• 전기전자학회논문지
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• 제27권3호
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• pp.288-295
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• 2023

본 연구에서는 radio frequency (RF)-스퍼터링을 이용하여 SiC 기판 위에 Ga₂O₃ 박막을 증착하여 Metal-Semiconductor-Metal (MSM) UV photodetector (PD)를 제작하였고, 산소 후열처리에 따른 PD 성능을 연구하였다. 산소 후열처리된 Ga₂O₃ 박막은 외부 광에 대한 전류의 상당한 증가와 시간 의존성 on/off 광 응답 특성에서 측정된 감소시간이 1.21, 1.12 s로 후열처리를 하지 않은 박막의 감소시간인 1.34, 3.01 s 보다 더 빠른 반응을 보여주었다. 이러한 특성은 산소 후열처리 후의 산소 공공 및 결함 분포 변화에 기인한다. 우리의 연구 결과는 산소 후열처리가 PD 성능 향상에 영향을 미칠 수 있다는 것을 확인하였다.

• Journal of Magnetics
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• 제7권2호
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• pp.40-44
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• 2002

Crystallographic and magnetic properties of ;$LaFe_{1-x}Ga_xO_3$($\chi$= 0, 0.1, 0.3, 0.5, and 0.7) were studied using XRD and Mossbauer spectroscopy. The crystal structures were found to be orthorhombic and the lattice parameters $\alpha$, b, and c were found to decrease with increasing Ga substitution. M$\ddot{o}$ssbauer spectra were obtained at various absorber temperatures ranging from 20 K to 750 K. The M$\ddot{o}$ssbauer spectra were all sextets below $T_N$ and were all singlets above $T_N$. Asymmetric broadening of the M$\ddot{o}$ssbauer spectral lines at 20 K was explained by the multitude of possible environments for an iron nucleus. As the temperature increases to $T_N$, a systematic line broadening in M$\ddot{o}$ssbauer spectra was observed and interpreted to originate from different temperature dependencies of the magnetic hyperfine fields at various iron sites.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.173-174
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• 2009

증착 온도를 변화시켜 성장시킨 Ga-doped ZnO 박막을 수소 열처리를 통해 구조적 전기적 광학적 성질을 기존의 투명 전극으로 사용되는 ITO (indium tin oxide) 물질을 대체할 수 있는 가능성을 확인하였다. 열처리 전 Ga-doped ZnO 박막의 증착온도가 증가함에 따라 전기적 성질이 향상되었지만 423 K 이상의 온도에서는 과잉 dopant인 Ga 으로 인한 기여도가 커져 $ZnGa_{2}O_{4}$와 $Ga_{2}O_{3}$ 상으로 인해 박막의 질이 저하되는 것을 확인할 수 있었다. 수소 열처리 후 과잉 dopant Ga 으로 인하여 상온에서 올린 박막만 전기적 성질이 향상되었지만 나머지 증착 온도 변화를 둔 박막에서는 큰 변화가 없었다.

• 한국재료학회지
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• 제28권5호
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• pp.268-272
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• 2018

An $Al_2O_3/AlN$ bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare $Al_2O_3/AlN/GaN$ metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscopy (XPS) with sputter etch treatment and current-voltage (I-V) measurements. XPS analyses reveal that the native oxides on the GaN surface are reduced significantly during the early ALD stage, indicating that AlN deposition effectively clelans up the GaN surface. In addition, the suppression of Al-OH bonds is observed through the ALD process. This result may be related to the improved device performance because Al-OH bonds act as interface defects. Finally, temperature dependent I-V analyses show that the barrier height increases and the ideality factor decreases with an increase in temperature, which is associated with the barrier inhomogeneity. A Modified Richardson plot produces the Richardson constant of $A^{**}$ as $30.45Acm^{-2}K^{-2}$, which is similar to the theoretical value of $26.4Acm^{-2}K^{-2}$ for n-GaN. This indicates that the barrier inhomogeneity appropriately explains the forward current transport across the $Au/Al_2O_3/AlN/GaN$ interface.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.

• 신재생에너지
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• 제1권4호
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• pp.19-24
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• 2005

수소 여과용 치밀질 membrane의 제조는 기존의 SC($SrCeO_3$)보다 높은 여과특성을 가지는 BC($BaCeO_3$)구조의 재료를 이용하여 시편을 제조하였고, 시편의 물성은 기공율, 수분에 대한 내구성 그리고 여과 특성을 측정하였다. 우선 열적 안정성 및 수분에 대한 내구성 향상은 $Y_2O_3$를 0.1mol첨가 하였을 때 1% 이내의 기공율을 가지고 있었으며 수분에 대한 안정성을 위해 boiling test에서도 균열이 발생되지 않고 안정적인 것을 확인할 수 있었다. 또한 여과 특성을 향상시키기 위해 Ce과 치환이 가능하고 전도성을 향상시킬 수 있는 $Ga_2O_3$, $La_2O_3$을 치환하여 물성을 측정한 결과 $Ga_2O_3$은 0.05, $La_2O_3$ 0.1mol%가 최적이었으며, 이들 중 $Ga_2O_3$가 0.05mol 첨가 되었을 때 가장 높은 이온 전도도 값을 얻었으며, $La_2O_3$이 첨가된 경우가 다음으로 높게 나타났다. 전자 전도성을 높이기 위하여 Pt를 sol로 만들어 나노 입자로 분산 시키는 방법으로 실험을 실시 $500^{\circ}C$ 이상의 온도에서는 복합전도에 의해 전도도가 향상되어지는 것을 확인할 수 있다. 또한 이들 시편의 여과 특성을 측정한 전도도 측정의 결과와 동일한 결과를 얻을 수 있었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.385-390
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• 2013

$(Ga_2O_3)_x(ZnO)_{100-x}$ (GZO) films were prepared at room temperature by using a facing target sputtering (FTS) system and their electrical resistivites was investigated as a function of the $Ga_2O_3$ content. The GZO film with an atomic ratio of $Ga_2O_3$ of x= 7 wt.%, shows the lowest resistivity of $7.5{\times}10^{-4}{\Omega}{\cdot}cm$. The GZO films were also prepared at various substrate temperatures from room temperature to $300^{\circ}C$, and their electrical resistivity was found to be improved as the substrate temperature was increased, A very low resistivity of $2.8{\times}10^{-4}{\Omega}{\cdot}cm$ that is almost comparable with that of ITO film was obtained in the GZO films prepared at the substrate temperature of $300^{\circ}C$ by using the FTS.