• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.3
• /
• pp.59-65
• /
• 1992

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

• Korean Journal of Plant Resources
• /
• v.14 no.1
• /
• pp.38-42
• /
• 2001

This study was conducted to stable direct sowing cultivation with seedling growth promotion by plant growth regulator treatment in onion seed(Allium cepa L.) The emergence percentage of soaked seed in BA, GA$_3$, and kinetin solution were higher than control seed, and those were 93.0, 94.3, 93.8%, respectively. The plant height was significant elongation in growth regulators treated seed, and those effects were high GA$_3$, kinetin and BA in the order, and the extend were high as increasing the growth regulator solution concentration in GA$_3$ and BA, and that was reverse in kinetin. The No. of leaf was increased in growth regulators treated seed, and the extend were similar among the growth regulators. The No. of root was increased significantly in growth regulators treated seed, and the extend were high in GA$_3$, BA and kinetin in the order.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.6
• /
• pp.574-579
• /
• 1999

A counter-flow type horizontal reactor of metal organic chemical vapor deposition was designed with the Reynolds and the Rayleigh numbers of Re = 4.5 and Ra = 215.8, respectively. The GaN thin films were grown and characterized by Hall measurement, double crystal X-ray diffraction analysis and photoluminescence measurement. The Si and Mg were also used for doping of GaN films. The dislocation density of $2.6{\times}10^8/\textrm {cm}^2$ was included in GaN films representing the geometrical lattice mismatch between sapphire substrates and GaN films. The Si doped n-GaN films provide the electron carrier density and mobility in the regions of $10^{17}~10^{18}/\textrm{cm}^3$ and 200~400 $\textrm{cm}^2$/V .sec, respectively. Mg doped p-GaN films were post-annealed and activated with the hole carrier density of $8{\times}10^{17}/{\textrm}{cm}^3$.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.4
• /
• pp.19-24
• /
• 2020

In this work, the electrical property of Si-doped β-Ga2O3 was investigated via a post-growth annealing process. The Ga2O3 samples were annealed under air (O-rich) or N2 (O-deficient) ambient at 800~1,200℃ for 30 mins. There was no correlation between the crystalline quality and the electrical conductivity of the films within the experimental conditions explored in this work. However, it was observed the air ambient led to severe degradation of the film's electrical conductivity while N2-annealed samples exhibited improvement in both the carrier concentration and Hall mobility measured at room temperature. Interestingly, the x-ray photoemission spectroscopy (XPS) revealed that both annealing conditions resulted in higher concentration of oxygen vacancy (VO). Although it was a slight increase for the air-annealed sample, high resistivity of the film strongly suggests that VO cannot be a shallow donor in β-Ga2O3. Therefore, the enhancement of the electrical conductivity of N2-annealed samples must be originated from something other than VO. One possibility is the activation of Si. The XPS analysis of N2-annealed samples showed increasing relative peak area of Si 2p associated with SiOx with increasing annealing temperature from 800 to 1,200℃. However, it was unclear whether or not this SiOx was responsible for the improvement as the electrical conductivity quickly degraded above 1,000℃ even under N2 ambient. Furthermore, XPS suggested the concentration of Si actually increased near the surface as opposed to the shift of the binding energy of Si from its initial chemical state to SiOx state. This study illustrates the electrical changes induced by a post-growth thermal annealing process can be utilized to probe the chemical and electrical states of vacancies and dopants for better understanding of the electrical property of Si-doped β-Ga2O3.

• Journal of Plant Biology
• /
• v.5 no.3
• /
• pp.11-20
• /
• 1962

CHA, Jong Whan (Dept. of Biology, Coll. of Education, Seoul National Univ.) Effect of Gibberelline on the growth and internal components of selected vegetable plants. Kor. Jour. Bot. V(3):11-20, 1962. The effect of GA on the growth as well as on the internal components of theleaves of ordinary vegetable plants under the soil culture was investigated. A relatively small difference in GA concentration applied showed a marked influence on the growth and constituents of the plants observed. The increase of growth was related to a highly significant digree with the intensity of GA. chlorophyll and carotene content in the leaves were significantly with increasing concentration of GA, except for some plants. The growth in all examined plants did not correspond to the contents of chlorophyll and carotene. In contrast the ascorbic acid in the leaves treated with GA decreased in proportion to the GA concentrations. Chlorophyll and ascorbic acid value differed greatly during the two experiments and the difference was proved significant. Carotene content varied with chlorophyll although the ratio of chlorophuyll to carotene was not so high as that obtained by Beak and Redman.

• Korean Journal of Clinical Laboratory Science
• /
• v.56 no.1
• /
• pp.43-51
• /
• 2024

[⁶⁸Ga]Ga-FAPI-04 is a promising radiopharmaceutical that binds specifically to fibroblast activation protein, which is overexpressed in more than 90% of malignant epithelial tumors but not in normal healthy tissue. This study aimed to develop an efficient method for producing ⁶⁸Ga-labelled FAPI-04 using a cassette-based automated synthesizer. [⁶⁸Ga]GaCl₃ was eluted from an Eckert & Ziegler Medical germanium-68/gallium-68 generator using 2.5 mL of 0.1 M HCl. The synthesis of the [⁶⁸Ga]Ga-FAPI-04 was performed using different concentrations of HEPES (1~2.5 M; 4-(2-hydroxyethyl) piperazine-1-ethanesulfonic acid) in 3~10 minutes; amounts of FAPI-04 precursor (5~50 ㎍) and reaction temperature (25℃~100℃) were optimized on the BIKBox^® synthesizer. The labeling efficiency of [⁶⁸Ga]Ga-FAPI-04 was greater than 96% (decay corrected) using 25 ㎍ FAPI-04 synthesized in 10 minutes at 100℃ in 2 M HEPES (pH 3.85), and its stability was greater than 99% at 6 hours. The total synthesis time of [⁶⁸Ga]Ga-FAPI-04 was 32.4 minutes, and the product met all quality control criteria. In this study, we developed and optimized a labeling method using [⁶⁸Ga]Ga-FAPI-04 using a cassette-based synthesizer. The devised method is expected to be useful for supplying [⁶⁸Ga]Ga-FAPI-04 for diagnosis in clinical practice.

• Journal of Korean Society of Forest Science
• /
• v.90 no.2
• /
• pp.184-189
• /
• 2001

Multiple shoots were induced from in vitro shoot originated from winter bud of P. yedoensis from Jeju. Most explants grow in similar type among the five different media but affected by supplement of sucrose regardless of media. For mass-propagation various concentrations of BAP or $GA_3$ were treated in the medium respectively. BAP was very effective to produce multiple shoots and 3.5~9.5 shoots were formed on the explant. The shoots induced on the high levels of BAP have short internodes. No shoots were induced on the treatment of $GA_3$ but roots were induced on it. When $GA_3$ was supplemented with the medium containing BAP, multiple shoots were produced from the explants. The medium(WPM) containing with $0.5mg/{\ell}$ BAP and $4.0mg/{\ell}$ $GA_3$ was most effective to produce multiple shoots. When the explants were cultured for 8 weeks, 39.5 shoots were developed in average.

• Korean Journal of Medicinal Crop Science
• /
• v.16 no.2
• /
• pp.106-111
• /
• 2008

This study was carried out to elucidate the influence of gibberellin soak and seed dressing with Toros wp. on the dehiscence of Eleutherococcus senticossus seeds. $GA_3$ treatment was effective on promoting after-ripening seed of Eleutherococcus senticossus whose concentration was higher until $500\;mg{\cdot}L^{-1}$, after-ripening period became shorter. But rotting percentage increased gradually up above $500\; mg{\cdot}L^{-1}\;GA_3$After all, $300\;mg{\cdot}L^{-1}\;GA_3$ was the most effective treatment for promoting after-ripening seed. Dressing treatment with Toros wp. on seeds reduced the dehiscent rate of E. senticosius. by suppressing activity of fungi living on the endocarp surface of seed.

• Korean Journal of Plant Resources
• /
• v.36 no.5
• /
• pp.508-516
• /
• 2023

Germination, growth characteristics, and content of useful components were analyzed through GA₃ treatment of Angelica acutiloba (Siebold & Zucc.) Kitagawa seeds, to provide basic data for cultivation technology. The moisture absorption rate of the seeds was 62.07% after 2 hours of soaking, and the highest value was 122.15% after 48 hours. The appropriate seed germination temperature for the species ranged from 10℃ to 25℃. It was confirmed that the growth of seedlings increased as the GA₃ concentration increased, but there was no significant difference in the content of useful components according to the GA₃ treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.249-254
• /
• 1998

The etching experiments for n-GaN were done using the wet chemical, photo-enhanced-chemical and electro-chemical etching methods. The experimental results show that n-GaN is etched is diluted NaOH solution at room temperature and the removed thickness of n-GaN is linearly increased with etching times. The etching rate of the photo-enhanced-chemical and electro-chemical etching methods are several times higher than that of the wet chemical method. The maximum etching rate of n-GaN with $n{\fallingdotseq}1{\times}10^{19}cm^{-3}$ was 164 $\AA$/min under the experimental condition of the Photo-enhanced-chemical etching. The etching rates of n-GaN are very much dependant on the electron concentrations of the samples. The pattern is $100{\mu}m{\times}100{\mu}m$ rectangulars covered with $SiO_2$film. It is shown that the etched side-wall charactistics of the pattern is vertical without dependance of the n-GaN orientations, and the smoothness of etched n-GaN surface is fairly flat.