• Journal of the Korean Society of Food Science and Nutrition
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• v.17 no.2
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• pp.115-124
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• 1988

This study was carried out to realize the effect of gibberllic acid$(GA_3)$, 1-naphthaleneacetic acid(NAA) and indole-3-acetic acid(IAA) on the biosynthesis of vitamin C. The relation between carbohydrate metabolism and vitamin C production in soybean sprouts was also investigated. Growth, vitamin C content, protein, galactonolactone dehydrogenase(GLD), ribulose diphosphate carboxylase(RuDpCO) and RNA level in the plastid and cytoplasm were determined. The effects of protein and respiratory inhibitors on the growth and vitamin C production were also examined. The most favourable growth of soybean sprouts was observed at the level of NAA $10^{-8}M,\;IAA10^{-6}M\;and\;GA_3\;10^{-5}M$ in the single treatment, respectively, and also favourable at levels of $GA_3\;10^{-5}M+NAA\;10^{-9}M\;and\;GA_3\;10^{-5}M+IAA\;10^{-9}M$ in the case of mixed treatment. The excellent growth was observed at the level IAA $10^{-6}M$ among all the single and mixed treatments. When the soybean sprouts were treated with NAA $10^{-8}M,\;IAA\;10^{-6}M\;GA_3\;10^{-5}M,\;GA_3\;10^{-8}M+IAA\;10^{-6}M,\;and\;GA_3\;10^{-5}M+IAA\;10^{-9}M$, the maximum growth rate was observed at the level of IAA $10^{-6}M$ and the conten of vitamin C was 24.26mg% which was 1.6 times higher than that of the control. RuDpCO was inhibited by the chloramphenicol at the concentration that did not inhibit the growth but the activities of NADP-GDH, GLD and vitamin C content were not affected. These results showed that the biosynthesis of viamin C had nothing to do with the activity of chloroplastic RNA but with cytoplasm. The highest vitamin C content was found at the the level of IAA $10^{-6}M$, where the GLD activity increased up 1.8 times of the control. The concentration of IAA $10^{-6}M$ promoted the biosynthesis of RNa and protein both in chloroplast and cytoplasm, especially in the cytoplasm. Thus it suggeted that IAA affected vitamin C biosynthesis by regulating RNA level in the cytoplasm. 2,4-Dinitrophenol as an uncoupler of oxidative phosphorylation did not inhibit the vitamin C biosynthesis, however, all of the respiratory inhibitors severely inhibited the growth and vitamin C biosynthesis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.40-44
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• 2022

Wet etching of α-Ga₂O₃ epitaxy film was performed using a 35 % hydrochloric (HCl) acid solution. As the temperature of the 35 % HCl solution increased, the α-Ga₂O₃ etch rate increased, and the etch rate of 119.6 nm/min was obtained at 75℃, the highest temperature examined in this work. The activation energy for etch reaction was determined to be 0.776 eV, and this suggests that the wet etching of α-Ga₂O₃ in the 35 % HCl solution was dominated by the reaction-limited mechanism. AFM analysis showed that the surface roughness of the etched surface increased as the temperature of the etchant solution increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.170-170
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• 2010

a-plane 혹은 m-plane면을 사용하는 무분극 GaN LED는 c축 방향으로 발생하는 분극의 영향을 받지 않기 때문에 분극 GaN LED에 비해 높은 내부 양자효율을 가진다. 또한 무분극 GaN는 상대적으로 고농도의 p-type 도핑이 가능하기 때문에 광효율을 높일 수 있다. 하지만 이와 같은 장점에도 불구하고 무분극 GaN는 성장모드의 비대칭으로 인해 높은 결정성과 mirror-like한 표면을 얻기가 힘들다. 본 논문에서는 Metalorganic chemical-vapor deposition (MOCVD) 장비를 사용하여 r-plane 사파이어 기판위에 a-plane GaN을 성장시켰다. 일반적으로 사용하는 저온에서의 nucleation layer 성장 대신 $1050^{\circ}$의 고온에서 성장 시킨후 일반적으로 사용하는 two-step 성장방법으로 그위에 5.5um정도의 GaN을 성장시켰다. 성장시 Trimethylgallium(TMGa)와 암모니아를 각각 Ga과 N 소스로 이용하였고 캐리어 가스는 수소를 사용하였다. 비대칭 결정성을 줄이기 위해 3D island growth mode에서의 성장조건을 바꾸어 c축과 m축 방향으로의 X-ray 결정성(FWHM) 차이가 564 arcsec에서 206 arcsec로 변화 시켰다. Normarski 현미경으로 표면을 관찰한 결과 v-defect이 없고 a-plane GaN에서 볼 수 있는 전형적인 줄무늬 패턴을 가지는 표면을 얻었으며 광학적 특성을 보기 위해 Photoluminescence (PL)을 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.298-299
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• 2010

Cu(In, Ga)Se2 (CIGS) 박막 태양전지는 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al 의 구조를 가지고 있다. CIGS 화합물은 direct bandgap 구조를 하고 있으며, 광흡수율이 다른 어떤 물질들 보다 뛰어나 박막으로도 충분히 태양광을 흡수할 수 있다. 또한 Ga의 도핑 농도에 따른 밴드갭 조절도 가능하다. 이러한 성질들로 인해 현재 박막태양전지로서 20.1%의 최고효율을 가지고 있다.[1] CIGS 박막 태양전지에서 p-CIGS layer와 스퍼터링으로 증착되는 n-ZnO layer사이의 buffer 층으로 chemical bath deposition (CBD)-CdS 박막을 주로 사용한다. CBD-CdS 박막은 n-ZnO 스퍼터로 증착 시킬 때, CIGS 층의 손상을 최소화하고, 이 두 층 사이에서의 격자상수와 밴드갭의 차이를 줄여주어 CIGS 박막태양전지의 효율을 증가 시키는 역할을 한다. 하지만, Cd (카드뮴)의 심각한 독성과 낮은 밴드갭(2.4eV)으로 인해 CIGS 층에서의 광흡수율을 줄여, CdS를 대체할 새로운 buffer 층의 필요성이 대두되었다.[2] 그 대안으로 ZnS, Zn(O, S, OH), (Zn, Mg)O, In2S3 같은 물질이 연구되고 있다. 현재 CBD-ZnS를 buffer 층으로 사용한 CIGS 박막태양전지의 효율은 최고 18.6%로 CBD-CdS의 최고효율보다는 약 1.5% 낮지만, ZnS가 높은 밴드갭(3.7~3.8eV)과 Cd-free 물질이라는 점에서 CdS를 대체할 물질로 각광받고 있다. 본 연구에서는 기존의 CdS 박막을 제조하는 방법과 같은 방법인 CBD를 이용하여 ZnS 박막을 제조하였다. ZnS 박막을 제조하기 위해서는 Zinc sulfate, Thiourea, 암모니아가 사용된다. 암모니아의 mol 농도에 따른 CBD-ZnS/CIGS 박막태양전지의 효율 변화를 관찰하기 위해 암모니아의 mol 농도는 1 mol, 2 mol, 3 mol, 4 mol, 5 mol, 6 mol, 그 이상의 과량을 사용하여 실험하였다. 실험 결과, 암모니아농도 5 mol에서 효율 13.82%를 확인할 수 있었다. 최고효율을 보인 조건인 암모니아 농도가 5 mol 일 때, Voc는 0.602V, Jsc는 33.109mA/cm2, FF는 69.4%를 나타내었다.

• Applied Biological Chemistry
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• v.21 no.2
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• pp.84-102
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• 1978

Barley embryoless half seeds were incubated in medium containing $10{\mu}M$ GA. Time course activity changes of ${\alpha}-amylase$ were studied in extract and medium seperately by the addition of $0.1{\mu}M,\;5{\mu}M,\;and\;10{\mu}M$ ABA in midcourse incubation of 10 hours after GA treatment. MAK profiles of nucleic acids in embryoless half seeds were compared either with $10{\mu}M$ GA treatment or concomitant treatment with $10{\mu}M$ GA and $10{\mu}M$ ABA after 10 hours incubation, Time course changes of weight increase, chlorophyll, protein and RNA consent in addition to RNase activity were studied in the presence of $10{\mu}M$ GA or $10{\mu}M$ ABA in barley coleoptile sections. After 20 hours incubation in the presence of plant hormones, MAK profiles of nucleic acids and reactive distribution of polysome and monosome were investigated. The above results were summarized as follows. 1) The production of ${\alpha}-amylase$ by treatment with GA alone increased at a linear rate in the incubation period and the active secretion of ${\alpha}-amylase$ began from 18 hours incubation in embryoless half seeds. 2) On the contrary to the partial inhibition by addition of $0.1{\mu}M$ ABA, the production of ${\alpha}-amylase$ was completely inhibited by both $5{\mu}M$ and $10{\mu}M$ ABA within 4 hours. Regardless of concentration of GA, the addition of $5{\mu}M$ ABA in midcourse completely inhibited the production of ${\alpha}-amylase$ 3) ABA treatment gave no effect on the secretion of ${\alpha}-amylase$. 4) There were no differences in RNA fractions between GA treatment and concomitant treatment with GA and ABA in the barlye embryoless half seeds. 5) While GA treatment increased the r-RNA fraction, ABA treatment decreased it and increased the s-RNA fraction in the coleoptile sections. 6) GA treatment increased RNA-DNA fraction best ABA treatment decreased it in the coleoptile sections. 7) While GA treatment suppressed RNase activity, ABA treatment increased it in the coleoptile sections. 8) GA treatment gave no great effect on the total RNA but ABA treatment remarkably diminished it in the coleoptile sections. 9) While GA treatment increased the growth and chlorophyll content, ABA treatment decreased them in the coleoptile sections. 10) GA treatment increased the protein synthesis and polysome formation but ABA treatment decreased them in the coleoptile sections. 11) The inhibition effect of ABA on polysome formation seemed to be resulted from the inhibition of r-RNA synthesis by ABA.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.242.1-242.1
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• 2011

산화물 반도체는 높은 이동도와 낮은 공정 온도, 넓은 밴드갭으로 인한 투명성등 많은 장정을 가지고 있어 최근 많이 연구되고 있다. 그 중에서도 InGaZnO (IGZO)는 In, Ga 함유량으로 박막의 전기적 특성을 쉽게 조절할 수 있고 상온에서 비정질 상태로 증착되어 균일성에 장점이 있다. IGZO 박막을 TFT에 적용 시 MOSFET과는 다르게 축적 상태에서 채널이 형성되기 때문에 산화물 반도체 내에 캐리어 농도는 TFT 특성에 많은 영향을 미친다. 또한, 실리콘 기반의 트랜지스터는 이온 주입 및 확산 공정을 통해서 선택적으로 $10^{20}/cm^3$ 이상의 고농도 도핑을 실시하여 좋은 트랜지스터 특성을 확보할 수 있으나 IGZO 박막에는 이러한 접근이 불가능하다. 따라서 IGZO 박막의 캐리어 농도를 조절할 수 있으면 소스/드레인과 반도체의 접촉 저항 감소 및 전계 효과 이동도등 많은 특성을 개선할 수 있다. 본 연구에서는 UV light를 이용하여 IGZO 박막의 캐리어 농도를 조절하였다. IGZO 박막은 UV light 조사로 인해 Mo와 IGZO박막의 접촉저항이 $3{\times}10^3\;{\Omega}^*cm$에서 $1{\times}10^2\;{\Omega}^*cm$로 감소하였다. 이는 UV 조사로 표면에 금속-OH 결합이 생성되어 IGZO 박막의 캐리어 농도가 ${\sim}5{\times}10^{15}/cm^3$에서 ${\sim}3{\times}10^{17}/cm^3$까지 증가하기 때문이다. 또한 표면에 생성된 OH기는 강한 친수성 성질을 보여주고 표면의 높은 에너지 상태는 Self-Assembly Monolayer (SAM) 공정 적용이 가능 하다. 본 실험에서는 SAM 공정을 적용하여 IGZO-based TFT 제작에 성공하였고, 이 TFT는 UV 조사 시간에 따라 전계 효과 이동도가 0.03 $cm^2/Vs$에서 2.1 $cm^2/Vs$으로 100배 정도 증가하였다.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1040-1044
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• 1995

Magnetic garnet films of (YSmLuCa)$_3$(FeGe)$\_$5/O$\_$12/ have been grown by the liquid phase eqitaxy method on the substrate of non-magnetic garnet Gd$_3$Ga$\_$5/O$\_$12/. The variation of Sm ion concentration were varied 0.3, 0.4, 0.6, mole/formula unit respectively. The magnetic properties of the samples for the bubble magnetic materials, such as, line width ΔH of ferromagnetic resonance (FMR), magnetic saturation induction 4$\pi$Ms, wall mobility u$\_$w/ uniaxial magnetic anisotropy energy Ku, were measured and discussed the relations between these properties. The line width ΔH decreases with increasing 4$\pi$Ms, and with decreasing Sm concentration. The anisotropy energy Ku increases not only with increasing Sm ion concentration, but also increasing 4$\pi$Ms. The value of wall mobility u$\_$w/ increase with increasing 4$\pi$Ms and decreases with increasing Sm concentration. We define a physical constant Eι from the fact that the product of 4$\pi$Ms and ΔH is constant with dimension of energy density. The Eι is dependent only on Sm concentration.density. The Eι is dependent only on Sm concentration.

• Journal of Bio-Environment Control
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• v.24 no.1
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• pp.27-33
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• 2015

High temperature stress in summer season at plastic house is a limiting factor for tomato fruit set and yield. This study was performed to assess the effects of gibberellic acid ($GA_3$) and 2,4-Dichlophenoxy acetic acid (2,4-D) spray on fruit set, yield, and quality of tomato cv. 'Adoration'(Enza Zaden Co., Ltd.) under the plastic house in Hwacheon, 2011. Four concentrations (0-, 5-, 10- and $15mg{\cdot}L^{-1}$) of $GA_3$, and three concentrations (0-, 5- and $10mg{\cdot}L^{-1}$) 2,4-D were sprayed in early flowering of tomato in the plastic house, and fruit set, yield and quality characters were observed. The results showed that spray of $10mg{\cdot}L^{-1}$ $GA_3$ significantly increased the fruit set by 14.2% than unsprayed. The spray of $GA_3$ significantly increased the marketable fruit number, fruit weight, and yield. The spray of 2,4-D on blossoms significantly affected the fruit set percentage, fruit weight, marketable fruit weight and yield, and the highest fruit set observed as 62.5% in combined spray of $GA_3$ and 2,4-D at each $5mg{\cdot}L^{-1}$. Fruit size and total soluble solids significantly varied with the concentrations of $GA_3$ sprayed. The result indicates that the spray of $10mg{\cdot}L^{-1}$ $GA_3$ and $5mg{\cdot}L^{-1}$ 2,4-D can be more economic and effective to increase the fruit set, and yield in tomato under high temperature condition in plastic house.

• Electrical & Electronic Materials
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• v.5 no.3
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• pp.284-294
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• 1992

합성용질확산법으로 GaP단결정을 성장시키고 몇가지 성질을 조사하였다. 정지상태에서 결정의 성장속도는 1.75[mm/day]이었고 결정성장용 석영관을 전기로내에서 하강시키므로써 양질의 GaP 단결정을 성장하였다. 에치피트밀도는 결정의 성장축 방향으로 3.8*$10^{4}$[$cm^{-2}$]부터 2.3*$10^{5}$[$cm^{-2}$] 까지 증가하였다. 성장된 GaP결정의 이동도와 캐리어농도는 실온에서 197.49[$cm^{2}$/V.sec]와 6.75*$10^{15}$[$cm^{-3}$]이었고 77K의 온도에서는 266.91[$cm^{2}$ /V.sec]와 3.13*$10^{14}$[$cm^{-3}$]이었다. 에너지갭의 온도의존성은 실험적으로 $E_{g}$(T)=2.3383-(6.082*$10^{-4}$) $T^{2}$/(373.096+T)[eV]로 구하여졌다. 저온에서 측정된 광루미네센스 스펙트럼은 구속된 여기자의 복사재결합과 재결합 과정에 포논의 참여로 인하여 에너지갭 부근의 복잡한 선 스펙트럼이 나타났고 얕은 준위의 Si도너와 Zn억셉터준위 사이에서의 복사재결합 및 이에 대한 1LO, 2LO의 포논복제가 나타났으며 S $i_{Ga}$ -S $i_{p}$의 쌍방출에 의하여 1.8932[eV]에서 넓은 반치전폭의 피크가 나타났다. GaP의 적외선 흡수는 TO, LO, LA, T $A_{1}$, T $A_{2}$ 포논들의 이중결합모드와 G $a_{2}$O의 진동모드 및 Si도너와 Zn억셉터들에 의하여 일어났다. Zn를 확산시키어 제작한 p-n GaP발광다이오드는 실온에서의 발광중심피크가 6250[.angs.]이었고 최대광출력은 0.0916[mW], 양자효율은 0.51%이었다.이었다.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.