• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.145-150
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• 1996

The magnetic thin films can be prepared without vacuum process and under the low temperature ( < $100^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Fe_{3-x}Mn_{x}O_4(x=0.0~0.023)$ films on glass plate at $80^{\circ}C$. We got the film $9000\AA$ in thickness, having a mirror-like luster. The composition parameter, x, in the $Fe_{3-x}Mn_{x}O_4$ films is much smaller then the corresponding on, x', in the reaction solution(x/x'=O.04). The saturation magnetization($M_{s}$) of $Fe_{3}O_{4}$ ferrite film as measured by a VSM was $M_{s}$=480 emu/cc which agrees with $Fe_{3}O_{4}$ bulk samples.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.240-248
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• 2002

$Fe_xTi_{l-x}O_2$ films (x=0.07 and 0.16) were grown by oxygen-plasma-assisted molecular beam epitaxy on rutile $TiO_2$(110). The same growth conditions were applied for both films in order to determine surface characteristics of grown films as a function of Fe composition. The films were characterized by several surface analysis techniques. The oxidation states of Ti and Fe in $Fe_xTi_{l-x}O_2$ films were found to be +4 and a mixture of +2 and +3, respectively. More $Fe^{3+}$ species exist in higher Fe doped film of $Fe_{0.16}Ti_{0.84}O_2$. The morphology of $Fe_{0.07}Ti_{0.93}O_2$ film shows tall rectangular and cylinderical islands growth on flat substrate-like surface. On the other hand, $Fe_{0.16}Ti_{0.84}O_2$ film consists of round shaped small islands showing somewhat rougher surface compared to the surface of $Fe_{0.16}Ti_{0.84}O_2$ film.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.43-46
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• 2015

$Si(100){\backslash}200nm$ $SiO_2{\backslash}5nm$ $Ta{\backslash}5nm$ $MgO{\backslash}35nm$ $Fe_3O_4$ multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at $500^{\circ}C$ for 1 hour under the high vacuum of ${\sim}1{\times}10^{-6}Torr$, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of $Fe_3O_4$ thin films prepared under different growth and annealing conditions.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.165-170
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• 2000

The purpose of this study is to investigate the effect of annealing conditions on physical and magnetic properties of Fe-Hf-N thin films. When the thin films were annealed in $N_2$ gas, a surface oxide layer, comprised of Fe$_2$O$_3$ and Fe$_3$O$_4$, was formed at the surface of the thin films and a Fe-Hf-O-N layer was also formed under this surface oxide layer. It was found that the thicknesses of the surface oxide layer and the Fe-Hf-O-N layer increased, as the annealing temperature increased. It was also found that if the thickness of the surface oxide layer was excluded in the property calculation, the soft magnetic properties of the annealed thin films were not much different from those of the as-deposited thin films. Therefore, it was suggested that the Fe-Hf-O-N layer formed under the surface oxide layer did not lose significantly the soft magnetic properties of the Fe-Hf-N films and the Fe-Hf-N films annealed in $N_2$gas showed the soft magnetic properties of the Fe-Hf-N and Fe-Hf-O-N multi-layers.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.243-248
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• 1997

The effect of $O_2$ partial pressure on microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, are investigated. Saturation magnetization ($4{\pi}M_s$) of Fe-Hf-O film were decreased with increasing $O_2$ partial pressure, the best soft magnetic properties exhibit at $O_2$ partial pressure of 10%. With further increase of $O_2$ partial pressure, soft magnetic properties decreased continuously. The $Fe_{82}Hf_{3.4}O_{14.6}$ film with $P_{O2}=10%$ exhibits good soft magnetic properties with $4{\pi}M_s=17.7kG$, $H_c=0.7Oe$ and ${\mu}_ {eff}$ (1~100 MHz)=2,500, respectively. The addition of O is effective in grain refinement. In case of $P_{O2}=15%$, it is observed that $Fe_3O_4$ compound is formed and high frequency soft magnetic properties are decrease. The electrical resistvity($\rho$) of Fe-Hf-O film is increased with increasing $O_2$ partial pressure. Electrical resistivity of $Fe_{82}Hf_{3.4}O_{14.6}$ film was 5 times higher than that of the film without oxygen. Thus, it is considered that the good magnetic properties of $Fe_{82}Hf_{3.4}O_{14.6}$ film results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.171-176
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• 1999

${\gamma}-Fe_2O_3$ thin films on $Al_2O_3$ substrate were prepared by the oxidation of $Fe_3O_4$ thin films processed by PECVD(Plasma-Enhanced Chemical Vapor Deposition) technique. The phase transformation of ${\gamma}-Fe_2O_3$ thin films was mainly controlled by the substrate temperature and oxidation process of $Fe_3O_4$ phase. $Fe_3O_4$ phase was obtained at the deposition temperature of $200{\sim}300^{\circ}C$. $Fe_3O_4$ phase could be transformed into ${\gamma}-Fe_2O_3$ phase under controlled oxidation at $280{\sim}300^{\circ}C$. $Fe_3O_4$ and ${\gamma}-Fe_2O_3$ obtained by oxidation of $Fe_3O_4$ phase had the same spinel structure and were coexisted. The oxidized ${\gamma}-Fe_2O_3$ thin film on $Al_2O_3$ substrate showed a porous island structure.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.88-92
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• 2011

We grew $Zn_{0.4}Fe_{2.6}O_4$ thin films using Pulsed Laser Deposition and studied their crystal structure and magnetical characteristics as a function of growth temperature ($T_g$). For the film with $T_g=300^{\circ}C$, X-ray reflections from ${\alpha}-Fe_2O_3$ and ZnO were observed. However, when $T_g$ was increased from 300 to $500^{\circ}C$, crystal structure of inverse spinel was stabilized with the crystal orientation of $Zn_{0.4}Fe_{2.6}O_4(111)/Al_2O_3(0001)$ without any detection of ${\alpha}-Fe_2O_3$ and ZnO phases. The surface morphology shows flattening behavior with increasing $T_g$ from 300 to $500^{\circ}C$. These observations indicate that Zn is substituted into tetrahedron A-site of the inverse-spinel $Fe_3O_4$. M-H curves exhibit clear ferromagnetism for the sample with $T_g=500^{\circ}C$ whereas no ferromagnetism is observed for the film with $T_g=300^{\circ}C$.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.755-759
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• 2000

The influence of $O_2$partial presure on saturation magnetization, coercivity and effective permeability(0.5~100MHz) of as-deposited Fe-Sm-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The nanocrystalline Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film fabricated at $O_2$partial pressure of 5% exhibits the best magnetic softness with saturation magnetization of 18kG, coercivity of 0.82 Oe and effective permeability about 2,600 at 0.5~100MHz. $\alpha$-Fe grain size is decreased with increasing $O_2$partial pressure. In case of $O_2$partial pressure of 10%, it is observed that FeO compound is formed and soft magnetic properties are decreased. The electrical resistivity of Fe-Sm-O thin films were increased with increasing $O_2$partial pressure, the electrical resistivity of Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film with the best soft magnetic properties was 130 $\mu$$\Omega$cm. Therefore, It is assumed that the good soft magnetic properties of Fe(sub)83.4Sm(sub)3.4O(sub)13.2 thin film results from high electrical resistivity and decreasing $\alpha$-Fe grain size due to precipitation of Sm-Oxide phase.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.18-22
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• 2006

Effects of V substitution of Fe on the magnetic properties of $Fe_3O_4$ have been investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), conversion electron Mossbauer spectroscopy (CEMS), and vibrating sample magnetometry (VSM) measurements on sol-gel-grown films. XRD data indicates that the $V_xFe_{3-x}O_4$ films maintain cubic structure up to x=1.0 with little change of the lattice constant. Analyses on V 2p and Fe 2p levels of the XPS data indicate that V exist as $V^{3+}$ mostly in the $V_xFe_{3-x}O_4$ films with the density of $V^{2+}$ ions increasing with increasing V content. Analyses on the CEMS data indicate that $V^{3+}$ ions substitute tetrahedral $Fe^{3+}$ sites mostly, while $V^{2+}$ ions octahedral $Fe^{2+}$ sites. Results of room-temperature VSM measurements on the films reveal that the saturation magnetization for the x=0.14 sample is larger than that of $Fe_3O_4$, while it becomes smaller than that of $Fe_3O_4$ for $x{\geq}0.5$. The coercivity of the $V_xFe_{3-x}O_4$ films is found to increase with x, attributed to the increase of anisotropy by the substitution of $V^{2+}(d^3)$ ions into the octahedral sites.

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.6-14
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• 2003

The purpose of this study is to investigate the effect of chemical reaction with a bonding glass on physical and magnetic properties of Fe-Hf-N/SiO$_2$ and Fe-Hf-N/Cr/SiO$_2$ thin films. When the Fe-Hf-N/SiO$_2$ films were reacted with the bonding glass, the soft magnetic properties of them were extremely degraded. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 1 kG, and its coercivity increased to 27 Oe, and its effective permeability decreased to 70. It was found that the degradation of soft magnetic properties of the Fe-Hf-N/SiO$_2$ films reacted with the bonding glass were attributed to the oxidation of the Fe-Hf-N layers to HfO$_2$ and Fe$_3$O$_4$. The soft magnetic properties of the Fe-Hf-N/Cr/SiO$_2$ films reacted with the bonding glass were degraded less than those of Fe-Hf-N/SiO$_2$ films. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 13.5 kG, and its coercivity increased to 4 Oe, and its effective permeability decreased to 700. It was found that the Cr layer suppressed the oxidation of the Fe-Hf-N layers during the chemical reaction between the Fe-Hf-N layer and bonding glass.