• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.187-192
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• 2000

We prepared $SiO_2-Na_2O-R_mO_n$ thin films based on economics of water glass and investigated optical, mechanical properties of product thin films. Coating sol stabilized with 1 N HCl and 1 N $NH_4OH$, was fabricated by using water glass and calcium nitrate, and aluminum nitrate as starting materials. As-coated films on stainless steel, Si wafer and soda-lime-silica glass by spinning were finally annealed at 500, 750 and $900^{\circ}C$. Micro hardness and nitrogen content in film surface of annealed films were measured by Knoop hardness tester and EDX, respectively. Field Emission Scanning Electron Microscope (FE-SEM) and UV-VIS spectroscopy were adopted to analyze surface morphology and thickness and reflectance of our films.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1829-1831
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_3O_{12}$(BNdT) thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying post-annealing temperatures. Increasing post-annealing temperature, the (117) peak was increased. An increase of rod type grains of BNdT films with increasing post-annealing temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with post-annealing temperature of $700^{\circ}C$ were 418 and 0.37, respectively.

• Journal of Powder Materials
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• v.14 no.4
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• pp.265-271
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• 2007

Electromagnetic wave absorbing materials have been developed to reduce electromagnetic interference (EMI) for electronic devices in recent years. In this study, Fe-Si-B-Nb-Cu base amorphous strip was pulverized using a jet mill and an attritor and heat-treated to get flake-shaped nanocrystalline powders, and then the powders were mixed, cast and dried with dielectric $Al_{2}O_{3}$ powders and binders. As a result, the addition of $Al_{2}O_{3}$ powders improved the absorbing properties of the sheets noticeably compared with those of the sheets without dielectric materials. The sheet mixed with 2 wt% $Al_{2}O_{3}$ powder showed the best electromagnetic wave absorption, which was caused by the increase of the permittivity and the electric resistance due to the dielectric materials finely dispersed on the Fe-based powder.

• Journal of Conservation Science
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• v.8 no.1 s.11
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• pp.10-15
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• 1999

The chemical compositions and microstructure of the punch'ong excavated from Bokwangri, Kangnung were investigated by the scanning electron microscope (SEM) with an energy dispersive X-ray spectrometer (EDS), X-ray diffractometer (XRD), and dilatometer. The compositions of body were $SiO_2(73-78\%),\;Al_2O_3(13-16\%)$, $RO{\cdot}R_2O(4-5\%,\;R=Ca,\;Mg,\;Na,\;K),\;R_xO_y(3-6\%,\;R=Fe,Ti)$ in weight ratio, which were higher silica and flux $(RO{\cdot}R_2O)$ but lower alumina. Owing to the high content$(21-30\%)$ of calcium oxide the glaze is considered lime type. Firing temperature range for the ceramic was presumed to about $1150^{\circ}C$.

• Conservation Science in Museum
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• v.24
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• pp.99-116
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• 2020

This study examines the results of analyses of the lead isotope ratio and chemical composition of lead glass and green glaze from ancient Northeast Asia in order to suggest their production sites and reveal further characteristics. The comparison of the lead isotope ratio of lead glass and green glaze from two Baekje remains in Iksan-the Wanggung-ri Site and Mireuksa Temple Site-suggests that they were produced to the west of the South Gyeonggi Massif (Zone 4) using lead extracted from the same area. With a few exceptions, it has proved difficult to identify the production sites of most of the green-glazed roof tiles from Unified Silla-period Buddhist temples across Northeast Asia. The major component of the lead glass from Baekje, Silla, China, and Japan during the seventh century is PbO, SiO₂, Al₂O₃, CuO, and Fe₂O₃, with a ratio of PbO and SiO₂ of 70 and 30 wt.%, respectively. The green-glazed roof tiles excavated from a temple from the Unified Silla period have a high proportion of lead, ranging from 64 to 90 wt.%. Green-glazed lozenge tiles excavated from the Sacheonwangsa Temple site in Gyeongju were shown to contain PbO, SiO₂, Al₂O₃, and CuO, a similar composition with lead glass. An experiment was conducted to reproduce a glaze according to the production method mentioned in the Zō hotokesho sakumotsu-chō (Buddhist statue workshop crop book) in the Shosoin Repository. In this experiment, an identical ratio of PbO was observed for Japanese green-glazed ceramics from the eighth to eleventh century as that found in Chinese lead-glazed ceramics excavated from kilns operated from the seventh to tenth century in Henan. This indicates that production methods for lead glass and glaze were shared across Northeast Asia.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.299-304
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• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.868-871
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• 2003

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of $1000^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using $SF_6/O_2$ and $CF_4/O_2$ gas mixture. Etch rate have been investigated as a function of oxygen concentration in the gas mixture, RF power, and working pressure. Etch rate was measured by surface profiler and FE-SEM. $SF_6/O_2$ gas mixture has been shown high etch rate than $CF_4/O_2$ gas mixture. Maximum etch rate appeared at 450W of RF power. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observed.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.104-104
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• 2015

• The Journal of the Petrological Society of Korea
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• v.3 no.3
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• pp.185-195
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• 1994

An experimental study of iron-aluminium partitioning between synthetic garnet and synthetic epidote was carried out, as equilibrium was maintained in the exchange reaction expressed as follows : $Ca_3Fe_2Si_3O_12\+\2\Ca_2Al_2AlSi_3O_12$(0H) = $Ca_3Al_2Si_3O_12\+\Ca_2Al_2FeSi_3O_12$(0H) Temperature has a pronounced effect on the distribution of Fe and A1 between the minerals. However, the pressure effect is not so drastic as in the exchange reaction. With increasing temperature, $Fe^{+3}$ becomes redistributed from garnet into epidote, whereas A1 becomes redistributed from epidote into garnet. This is in line with the general principle of phase correspondence, as the temperature increases the more electropositive metal aluminium redistributes from epidote into garnet. The agreement between the experimental results of this study and the natural samples suggests that $K_D=X^{Ep}_{Fe}/X^{Gr}_{Fe}$ may be a useful geothermometer for metamorphic rocks containing garnet and epidote that are close to binary Fe-A1 compounds.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.281-290
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• 2011

In order to gain better understanding of the selective surface oxidation and its influence on the galvanizability of a transformation-induced plasticity (TRIP) assisted steel containing 1.5 wt.% Si and 1.6 wt.% Mn, a model experiment has been carried out by depositing Si and Mn (each with a nominal thickness of 10 nm) in either monolayers or bilayers on a low-alloy interstitial-free (IF) steel sheet. After intercritical annealing at $800^{\circ}C$ in a $N_2$ ambient with a dew point of $-40^{\circ}C$, the surface scale formed on 590 MPa TRIP steel exhibited a microstructure similar to that of the scale formed on the Mn/Si bilayer-coated IF steel, consisting of $Mn_{2}SiO_{4}$ particles embedded in an amorphous $SiO_{2}$ film. The present study results indicated that, during the intercritical annealing process of 590 MPa TRIP steel, surface segregation of Si occurs first to form an amorphous $SiO_{2}$ film, which in turn accelerates the out-diffusion of Mn to form more stable Mn-Si oxide particles on the steel surface. During hot-dip galvanizing, particulate $Fe_{3}O_{4}$, MnO, and Si-Mn oxides were reduced more readily by Al in a Zn bath than the amorphous $SiO_{2}$ film. Therefore, in order to improve the galvanizability of 590 TRIP steel, it is most desirable to minimize the surface segregation of Si during the intercritical annealing process.