• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1067-1070
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• 2009

We studied change in water contact angle on $TiO_2$ surfaces upon high-energy electron-beam treatment. Depending on conditions of e-beam exposures, surface OH-content could be increased or decreased. In contrast, water contact angle continuously decreased with increasing e-beam exposure and energy, i.e. change in the water contact angle cannot be rationalized in terms of the overall change in the surfacestructure of carbon-contaminated $TiO_2$. In the C 1s spectra, we found that the C-O and C=O contents gradually increased with increasing e-beam energy, suggesting that the change in the surface structure of carbon layers can be important for understanding of the wettability change. Our results imply that the degree of oxidation of carbon impurity layers on oxide surfaces should be considered, in order to fully understand the change in the oxide surface wettability.

• Journal of the Korean Ceramic Society
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• v.15 no.2
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• pp.72-78
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• 1978

The vapor pressure of the high melting point oxides, MgO, $Cr_2O_3$, and $MgCr_2O_4$ were measured over the temperature range 1300 to 175$0^{\circ}C$ under vacuum <$10^{-5}$ torr by the Langmuir and the Knudsen method. The Langmuir vapor pressure was increased with elevating temperature and with increasing porosity of the specimen. The difference between the vapor preseures measured by the Langmuir and the Knudsen method was decreased with elevating temperature and the Langmuir vapor pressure finally reached the Knudsen vapor pressure at the melting point when extrapolated. The vapor pressure of other important oxides with high melting points, i.e., $Al_2O_3$, $ThO_2$, $Yb_2O_3$ and $Y_2O_3$ were cited from the references. The Langmuir and the Knudsen vapor pressure of these oxides also showed the same results, i.e., they showed the same value at their melting points.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Journal of Powder Materials
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• v.25 no.3
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• pp.213-219
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• 2018

We report a method for preparing rare earth oxides ($Re_xO_y$) from the recycling process for spent Ni-metal hydride (Ni-MH) batteries. This process first involves a leaching of spent Ni-MH powders with sulfuric acid at $90^{\circ}C$, resulting in rare earth precipitates (i.e., $NaRE(SO_4)_2{\cdot}H_2O$, RE = La, Ce, Nd), which are converted into rare earth oxides via two different approaches: i) simple heat treatment in air, and ii) metathesis reaction with NaOH at $70^{\circ}C$. Not only the morphological features but also the crystallographic structures of all products are systematically investigated using field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD); their thermal behaviors are also analyzed. In particular, XRD results show that some of the rare earth precipitates are converted into oxide form (such as $La_2O_3$, $Ce_2O_3$, and $Nd_2O_3$) with heat treatment at $1200^{\circ}C$; however, secondary peaks are also observed. On the other hand, rare earth oxides, RExOy can be successfully obtained after metathesis of rare earth precipitates, followed by heat treatment at $1000^{\circ}C$ in air, along with a change of crystallographic structures, i.e., $NaRE(SO_4)_2{\cdot}H_2O{\rightarrow}RE(OH)_3{\rightarrow}RE_xO_y$.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.14 no.2
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• pp.103-115
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• 1981

The cathodic reactions of lead anodic films formed in phosphoric acid, oxalic acid and sodium hydroxide solutions and the reactivities of Di-iso-butylnitrosoamine (DBNA) in sea water at $15\sim30^{\circ}C$ were studied by means of constant current-potential method. Besides, various contants and thermodynamic quantities obtained in the experiment were also do-scribed to explain the reactivities of protons that entered in the anodic film by being transferred across the metal-oxide interface. The electrode reactions of lead anodic film formed in sodium hydroxide solution in 60mM DBNA+0.5M NaCl did not occur because of complete insulator formed on anodic film. The values of $(\partial\triangle E_{H^+}/\partial T)_{i=const}$, estimated with Bead anodic films formed in phosphoric acid in 60mM DBNA+0.5M NaCl and 60mM $DBNA+6\%_{\circ}$ sea water were $-0.006\;V/^{\circ}C\;and\;-0.005\;V/^{\circ}C$, thus being nearly coincided, but the values of $(\partial E_o/\partial T)_{i=o}$ were $0.002\;V/^{\circ}C\;and\;-0.002\;V/^{\circ}C$, being completely inversed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.4 no.4
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• pp.61-68
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• 1995

TiC-Al2O3 composite ceramics has high hardness, high strength, high wear and corrosion resistance. Therefore, composite ceramics have been concerned significantly with some excellent properties and many functions as new industrial materials to the industry at large. In present research, experiments are carried out to obtain the machinability and machining properties by EDM. As a result, the most suitable machining conditions of TiC-Al2O3 composite ceramics was that the pulse duration is 10-60$mutextrm{s}$, the peak current is 10-16A. The machining speed and the wear of the tool electrode increased with the increase in peak current.