• Title/Summary/Keyword: $E_{v2}$

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Crystallization Mechanism of Lithium Dislicate Glass with Various Particle Sizes (Lithium disilicate 유리의 입자크기에 따른 결정화 기구)

  • Choi, Hyun Woo;Yoon, Hae Won;Yang, Yong Suk;Yoon, Su Jong
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.54-60
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    • 2016
  • We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

Temperature dependence of photocurrent for CdIn2Te4 single crystal grown by Bridgman method (Bridgman법으로 성장한 CdIn2Te4 단결정의 광전류 온도 의존성)

  • 유상하;홍광준
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.157-157
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    • 2003
  • 수평 전기로에서 CdIn2Te4 다결정을 용융법으로 합성하고 Bridgman법으로 tetragonal structure의 c축에 평행한 CdIn2Te4 단결정을 성장시켰다. c축에 평행한 시료의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 spectra에 의해 band gap Eg(T)는 varshni공식에 따라 계산한 결과 1.4753eV-(7.78$\times$$10^{-3}$eV/K)T$^2$/(T+2155K)임을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.01$\times$$10^{16}$ /㎤, 219 $\textrm{cm}^2$/V.S였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting $\Delta$cr값이 0.2704 eV이며 spin-orbit $\Delta$so 값은 0,1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n=1일때 Al-, Bl-와 Cl-exciton 봉우리임을 알았다.

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Optical Properties of SnS2 Single Crystals

  • Lee Choong-Il
    • Korean Journal of Materials Research
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    • v.15 no.3
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    • pp.195-201
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    • 2005
  • The $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals were grown by the chemical transport reaction method. The indirect optical energy band gap was found to be 2.348, 2.345, and 2.343 eV for the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively. The direct optical energy band gap was found to be 2.511, 2.505, and 2.503 eV f3r the $SnS_2,\;SnS_2:Cd$, and $SnS_2:Sb$ single crystals, at 6 K respectively The temperature dependence of the optical energy band gap was well fitted by the Varshni equation. Two photoluminescence emission peaks with the peak energy of 2.214 and 1.792 eV for $SnS_2$, 2.214 and 1.837 eV for $SnS_2:Cd$, and 2.214 and 1.818 eV the $SnS_2:Sb$ were observed. The emission peaks were described as originating from the donor-acceptor pair recombinations.

Population-Based Newborn Hearing Impairment Screening Test Using GJB2 Mutation Analysis

  • Lee, Kyung-Ok;Jeong, Su-Jin;Byun, Ji-Young;Kim, Jeong-Sook;Lee, Hye-Jung;Seong, Hye-Soon;Kim, Kyung-Tae
    • Korean Journal of Clinical Laboratory Science
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    • v.39 no.2
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    • pp.113-121
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    • 2007
  • Hearing loss is a common congenital disorder that is frequently associated with mutations in the Cx26 gene (GJB2). Recently, the mutation analysis of GJB2 has been used in a newborn screening test for the detection of hearing impairment. Population-based studies should be performed before the application of genetic testing for the identification of deaf newborns. In this study, 8 positions of GJB2 mutations-including 35delG, 167delT, 235delC, V27I, V37I, M34T, E114G, and I203T-were analyzed using PCR-direct sequencing in a total of 437 healthy Korean neonates. DNAs from dried blood spots were extracted using a commercial DNA extraction kit. The PCR-amplified products (783 bps) of the GJB2 gene were detected using 2% agarose gel electrophoresis and subjected to direct sequencing. The sequences were compared with those in the GenBank database by using the BLAST program. In this study, 5 GJB2 mutations -including V27I (79G>A), V37I (109G>A), E114G (341A>G), I203T (608T>C), and 235delC- were found. Of the 437 neonate samples, 301 subjects showed GJB2 mutations (68.9%, 301/437). The V27I mutation was found in 271 subjects and was the most frequent (62.0%, 271/437). The E114G, I203T and V37I mutations were shown in 146, 17 and 14 subjects, respectively. The 235delC mutation was found in 1 subject. The E114G mutation was frequently accompanied by the V27I mutation. V27I/E114G (97.2%, 143/147) was the most common double mutation and 3 subjects had the double mutation V27I/I203T. A triple mutation, V27I/E114G/I203T, was found in 1 subject. In conclusion, PCR-direct sequencing is a convenient tool for the rapid detection of GJB2 mutations and this data might provide information for the genetic counseling of the GJB2 gene.

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Interface formation between tris-(8-hydroxyquinoline) aluminum and room temperature stable electride: C12A7:$e^-$

  • Kim, Ki-Beom;Kikuchi, Maiko;Miyakawa, Masashi;Yanagi, Hiroshi;Kamiya, Toshio;Hirano, Masahiro;Hosono, Hideo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.235-238
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    • 2006
  • Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

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A study of the photoluminescence of undoped ZnO and Al doped ZnO single crystal films on sapphire substrate grown by RF magnetron sputtering (RF 스퍼터링법으로 사파이어 기판 위에 성장한 ZnO와 ZnO : A1 박막의 질소 및 수소 후열처리에 따른 Photoluminescence 특성)

  • Cho, Jung;Yoon, Ki-Hyun;Jung, Hyung-Jin;Choi, Won-Kook
    • Korean Journal of Materials Research
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    • v.11 no.10
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    • pp.889-894
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    • 2001
  • 2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

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Kinetics and Mechanism of Mutant O-acetylserine Sulfhydrylase-A (C43S) from Salmonella typhimurium LT-2

  • Yoon, Moon-Young
    • BMB Reports
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    • v.29 no.3
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    • pp.210-214
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    • 1996
  • The pH dependence of the kinetic parameters of mutant O-acetylserine sulfhydrylase (OASS) from Salmonella typhimurium LT-2 has been determined in order to obtain information on the chemical mechanism. The initial velocity pattern obtained by varying the concentrations of OAS at several fixed concentrations of TNB, shows an intersection on the left of the ordinate at pH 7.0, indicating that the kinetic mechanism is a sequential mechanism in which substrate inhibition by OAS is observed while the wild type enzyme showed a ping pong mechanism. The values of $V/E_t$, $V/K_{OAS}E_{t}$ and $V/K_{TNB}E_{t}$ decreased by about 68%, 14% and 16% as compared with the wild type enzyme. The $V/K_{OAS}E_{t}$ is a pK of 6.5 on the acid side of the pH profile, and the $V/K_{TNB}$ is pH independent. As compared with the wild type enzyme, the pKs in the V/K profiles are shifted, reflecting that binding of the cofactor in free E:OAS is less asymmetric.

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Ge(110) 표면에서 탄소 원자 확산에 대한 수소의 효과

  • Park, Ga-Ram;Jeong, Seok-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.127.2-127.2
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    • 2016
  • 연구된 Si위의 흡착원자들의 확산 메커니즘들에 비해 Ge 표면에서의 확산 메커니즘은 잘 알려져 있지 않다. 최근 연구에 따르면, 수소가 덮인 Ge(110) 표면에서 그래핀 결정 핵생성은 비등방적이며, 낟알 둘레없이 웨이퍼 크기로 성장시킬 수 있음을 보였다. 본 연구에서는 VASP(Vienna Ab-initio Simulation Package)의 NEB(Nudged Elastic Band) 방법을 이용하여 수소가 덮인 Ge(110) 표면과 청결한 표면에서 탄소원자의 확산 과정과 확산에 따른 에너지 장벽을 계산 하였다. 계산 결과 수소가 덮인 표면에서의 탄소원자 확산은 체인 방향으로 각각 3.29 eV, 2.67 eV의 에너지 장벽을 가지고 청결한 표면에서는 탄소원자가 게르마늄 연결을 치환하며 확산한다. 이때 에너지 장벽은 0.82 eV이고 치환된 게르마늄이 확산할 때는 각각 0.64 eV, 0.59 eV의 에너지 장벽을 넘어야 한다. 결과적으로 수소가 덮인 표면에서보다 청결한 표면에서 탄소 확산 에너지 장벽이 낮으며, 청결한 표면에서는 탄소가 게르마늄을 치환하고 치환된 게르마늄이 확산할 확률이 높음을 알 수 있었다.

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Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

  • De, Arijit
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.1
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    • pp.5-9
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    • 2015
  • Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

Molecular Characterization of $Ca_v2.3$ in Rat Trigeminal Ganglion Neurons

  • Fang, Zhi;Kim, Joong-Soo;Oh, Seog-Bae
    • International Journal of Oral Biology
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    • v.31 no.2
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    • pp.45-51
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    • 2006
  • R-type($Ca_v2.3$) calcium channel contributes to pain sensation in peripheral sensory neurons. Six isoforms of $Ca_v2.3$ that result from combinations of presence or deletion of three inserts(insert I and insert in the II-III loop, and insert III in N-terminal regions) have been demonstrated to be present in different mammalian tissues. However, the molecular basis of $Ca_v2.3$ in trigeminal ganglion(TG) neurons is not known. In the present study, we determined which isoforms of $Ca_v2.3$ are expressed in rat TG neurons using the RT-PCR analysis. Whole tissue RT-PCR analyses revealed that only two isoforms, $Ca_v2.3a$ and $Ca_v2.3e$, were present in TG neurons. From single-cell RT-PCR, we found that $Ca_v2.3e$ rather than $Ca_v2.3a$ was the major isoform expressed in TG neurons, and $Ca_v2.3e$ was preferentially detected in small-sized neurons that express nociceptive marker, transient receptor potential vanilloid 1(TRPV1). Our results suggest that $Ca_v2.3e$ in trigeminal neurons may be a potential target for the pain treatment.