• Communications of the Korean Mathematical Society
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• v.21 no.2
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• pp.261-272
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• 2006

In this paper, we define the sequence spaces: $[V,{\lambda},f,p]_0({\Delta}^r,E,u),\;[V,{\lambda},f,p]_1({\Delta}^r,E,u),\;[V,{\lambda},f,p]_{\infty}({\Delta}^r,E,u),\;S_{\lambda}({\Delta}^r,E,u),\;and\;S_{{\lambda}0}({\Delta}^r,E,u)$, where E is any Banach space, and u = ($u_k$) be any sequence such that $u_k\;{\neq}\;0$ for any k , examine them and give various properties and inclusion relations on these spaces. We also show that the space $S_{\lambda}({\Delta}^r, E, u)$ may be represented as a $[V,{\lambda}, f, p]_1({\Delta}^r, E, u)$ space. These are generalizations of those defined and studied by M. Et., Y. Altin and H. Altinok [7].

• Journal of the Korean Chemical Society
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• v.14 no.2
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• pp.141-145
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• 1970

The reduction of Mo-thiocyanate (V) complex on dropping mercury electrode has been studied at ionic strength 0.6 with pH less than 2.3. D-C polarogram obtained from acidic solutions are reversible, diffusion controlled current. The electrode reaction of Mo-thiocyanate(V) may be represented as follows. $MoO(SCN)_3\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;H_2O\;+\;SCN^-$From this reaction, the half wave potential assumed to be $E_{1/2}\;=\;E_0'\;-\;0.059\;pH\;-\;0.03\;log{\;frac{[Mo(SCN)_2{^+}][SCN^-]}{[MoO(SCN)_3]}}$Considering the dissociation of this complex, however, it was estimated that the electrode reaction may be written by. $MoO^{+3}\;+\;3SCN^-\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;SCN^-\;+\;H_2O$.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.255-262
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• 1994

Arc melted Ti-5Bi alloy was oxidized by thermal oxidation method. In the present study free energy efficiency(${\eta}_e$) of titanium oxide electrode(TOE) was measured as a function of light intensity and light energy. Flat-band potential of TOE was measured as a function of the light intensity and the solution pH. The ${\eta}_e$ of TOE increased with the increase of light intensity and tight energy to maximum value of 3.2% and 13%, respectively, at $0.2W/cm^2$ and 4.0eV. The ${\eta}_e$ was strongly dependent on the magnitude of the bias voltage. Maximum value was found at 0.5V bias. Photocurrent of TOE was controlled by electron-hole pair generation in depletion layer. The flat-band potential of the illuminated TOE shifted to -0.065V/decade with increasing light intensity. With the decrease of pH of electrolyte, flat-band potential shifted to anodic direction. The experimental slope was in good agreement with the Nernstian value of 0.059V/pH decade.

• Nuclear Engineering and Technology
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• v.19 no.2
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• pp.115-121
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• 1987

A high voltage stabilization system for the SNU 1.5MV Tandem Van do Graaff accelerator was set up and its operational characteristics were examined and optimized. The optimum parameters of beam transport system were experimentally determined, and under the proper condition the accelerated proton beam current of 350nA was obtained at the target chamber. Without the high voltage stabilization the observed magnitude of voltage fluctuation was $\Delta$V/ V=5.2$\times$10$^{-3}$ without ion beam and 7.2$\times$10$^{-3}$ with ion beam, respectively, and its apparent ripple frequency for voltage fluctuations was about 3Hz or less. Through the optimized operation of the high voltage stabilization system, the terminal voltage fluctuation was reduced to $\Delta$V/V=2.45$\times$10$^{-4}$ and the energy stability with $\Delta$E/E=2.44$\times$10$^{-4}$ was steadily maintained at the 247.3kV terminal voltage, and the stabilization factor was deduced to be 29.4.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.8
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• pp.966-971
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• 1988

AES was used to study oxygen adsorption due to the oxygen exposure at 300\ulcorner temperature and segregation of impurities due to annealing on polycrystal copper surface. The intensity of peak of CuM2, 3VV and CuL3 VV increased with annealing time and the peak of CKLL increased after Ar ion bombardment. The effect of oxygen adsorption on copper surface at 300\ulcorner was verified by the decreased of peak of CuM2, 3VV and CuL3 VV as oxygen exposure increase. The binding energy of copper atoms gradualy shifts from 0.7eV to 1.5eV of copper atoms gradually shifts from 0.7eV to 1.5eV after a oxygen exposure. After the oxygen exposure, the width at half the height of CuM2, 3VV is larger 2V*C/S by the effect of chemical liaison of the copper aton with oxygen atom.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• The Journal of the Korea Contents Association
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• v.5 no.5
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• pp.133-139
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• 2005

The neutron capture cross section of $^{99}Tc$ has been measured relative to the $^{10}B(n,\gamma)$ standard cross section by the neutron time-of-flight(TOF) method in the energy range of 0.007 eV to 47 keV using a 46-MeV electron linear accelerator(linac) at the Research Reactor. Institute, Kyoto University(KURRI). In order to experimentally prove the result obtained, the supplementary cross section measurement has been made from 0.3 eV to 1 keV using the Kyoto University Lead stowing-down spectrometer (KULS) coupling to the linac. The relative measurement by the TOF method has been normalized to the reference value(20.01 b) at 0.0253 eV and the KULS measurement to that by the TOF method. The existing experimental data and the evaluated capture cross sections in ENDF/B-VI, JENDL-3.2, and JEF-2.2 have been compared with the current measurements by the linac TOF and the KULS experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Kyungpook Mathematical Journal
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• v.58 no.4
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• pp.747-759
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• 2018

A graph G = (V (G), E(G) of order n = |V (G)| and size m = |E(G)| is said to be odd harmonious if there exists an injection $f:V(G){\rightarrow}\{0,\;1,\;2,\;{\ldots},\;2m-1\}$ such that the induced function $f^*:E(G){\rightarrow}\{1,\;3,\;5,\;{\ldots},\;2m-1\}$ defined by $f^*(uv)=f(u)+f(v)$ is bijection. While a bipartite graph G with partite sets A and B is said to be bigraceful if there exist a pair of injective functions $f_A:A{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ and $f_B:B{\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ such that the induced labeling on the edges $f_{E(G)}:E(G){\rightarrow}\{0,\;1,\;{\ldots},\;m-1\}$ defined by $f_{E(G)}(uv)=f_A(u)-f_B(v)$ (with respect to the ordered partition (A, B)), is also injective. In this paper we prove that odd harmonious graphs and bigraceful graphs are equivalent. We also prove that the number of distinct odd harmonious labeled graphs on m edges is m! and the number of distinct strongly odd harmonious labeled graphs on m edges is [m/2]![m/2]!. We prove that the Cartesian product of strongly odd harmonious trees is strongly odd harmonious. We find some new disconnected odd harmonious graphs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.226-230
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• 2003

In this thesis I analyzed that V5.2 protocol function is effective to fulfill all of the services that are provided at the existing local exchange. I analyzed this in five methods that refer to ETSI inside patronage. I experimented turnaround time by Start-up method and verified V5.2 protocol function when Start-up. Also I confirmed stability of system by the reconstruction-ability experiment related E1 switch over. I verified V5.2 protocol function through PSTN call process that uses a special service test and local call simulator. As a result of experiment, I confirmed the best method when simultaneous Start-up. V5.2 protocol function was excellent and It becomes switch over at 1/1000 seconds when E1 is out of service. V5.2 protocol function was effective to fulfill all of the special services that are provided at local exchange and its long call process ability was superior to KT standard with 4 fails in 20000 calls. Through the experiment, it was proved that V5.2 interface will become a significant element of communication network when after LE side expanse of v5 interface ID with TDX-100 exchanger and the AN occurrences OOS by message transmission limit and call disconnect when E1 switch over are improved.