• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.360.2-360.2
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• 2016

CuSn thin films were fabricated by rf magnetron co-sputtering method on the Si(100) substrate for evaluation of the antibacterial effect. The co-sputtering process was performed with different rf powers and sputtering times to regulate the thickness of the films and relative atomic ratio of Cu to Sn. The physicochemical properties of the CuSn thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), Optical microscope (OM), 4-point probe, and antibacterial test. An antibacterial test was conducted with Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) as changing contact times between CuSn fillms and bacteria suspension. We compared to the crystalline structures of films before sterilization and after sterilization by XRD measurement. The changes of oxidation states of Cu and Sn and the chemical environment of films before and after antibacterial test were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. After antibacterial test, the morphology of the films was checked with an OM images. The electrical properties of the CuSn films such as surface resistance and conductivity were measured by using 4-point probe.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.111-117
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• 1998

Recent discovery of colossal magnetoresistance (CMR) phenomena in perovskite manganese oxides has evoked great interest for its physical peculiarity and the possible industrial application. Besides manganese oxides, CMR phenomena is also observed in $Tl_2Mn_2O_7$ with pyrochlore structure and in Cr-based chalcogenide with spinel structure. In this paper, we have studied electronic structures of Cr-based chalcogenide spindles $Fe_{1-x}Cu_xCr_2S_4$ at x=0.0, 0.5, 1.0 using the linearized muffin-tin orbital (LMTO) band method within the local density approximation (LDA). The characteristic resistivity for x=0.0, 0.5 could be explained qualitatively in terms of the half-metalic electronic structure and the Jahn-Teller effect. Especially, the half-metallic nature appearing in the metallic temperature regime is well descibed by the proposed conduction model for x=0.0, 0.5, 1.0. We have suggested, based on the conduction model, that the CMR phenomena observed in these compounds are closely correlated with the obtained half-metallic electronic structure.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.295-295
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• 2010

Nanoparticles of the compound semiconductor, Cu(In, Ga)Se2 (CIGS), were synthesized in solution under ambient pressure below $100^{\circ}C$ and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption spectroscopy and energy-dispersive X-ray (EDX) analyses. These materials have chalcopyrite crystal structures and the particle sizes less than 100 nm. Synthetic conditions were studied for the crystallized CIGS nanoparticles formation to prevent from side products of Cu2Se, Cu2-xSe, and CuSe etc. The single phase CIGS nanoparticles were applied to coating of thin films photovoltaic cells. The electro deposition of CIGS thin films is also a good non-vacuum technology and under investigation. In aqueous solutions, the different chemical compositions of CIGS thin films were obtained, depending on pH, concentration of starting materials and deposition potentials. The surface morphology of the prepared CIGS thin films depends on the complexing ligands to the solutions during the electrochemical deposition.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.187-193
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• 1997

We investigated the initial growth mode of Cu deposited on polyimide at room temperature using x-ray photoelectron spectroscopy. We could find that when Cu is sputter-deposited on the polymide, Cu-N-O complex of strong interaction is mainly formed first, Cu-oxide of weak interaction is formed successively, and then finally metallic Cu grow. From these results, we could conclude that Cu/polyimide interface consists of Cu-N-O complex and Cu-oxide.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.135-140
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• 1998

We investigated the initial growth mode of Cu deposited on polyimide at high temperature($350^{\circ}C$) using x-ray photoelectron spectroscopy. We could find that when Cu is sputter-deposited on the polyimide at high temperature, Cu-C-N complex is formed first, Cu-N-O complex and Cu-oxide are mainly formed successively, and then funally metallic Cu grows. In the chemical reaction point of view, the interface of Cu/polyimide at high temperature is than that at room temperature.

• Progress in Superconductivity
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• v.6 no.2
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• pp.129-132
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• 2005

The formation behavior of $YBa_2Cu_3O_{7-x}$(Y123) and CuO phases in the heat-treated Cu-sheathed YBCO thick films was studied. The thick films were prepared by screen-printing method using $BaCO_3$ and Y211 powders on Cu tapes. The screen-printed thick films were placed at the center of the tube furnace, heated to $930^{\circ}C$ in air atmosphere and then maintained at the temperature for 60 sec - 300 sec. The microstructure and phases formed in the thick films were investigated by using optical microscope, X-ray diffraction (XRD) and SEM image analysis. During the heat treatment, partial melting occurred rapidly in the printed layers by peritectic reaction between CuO and precursor powders, and then YBCO superconducting phases nucleated from the Cu tapes and grew in a form of thick films.

• Progress in Superconductivity
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• v.6 no.1
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• pp.13-18
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• 2004

High-.ate in-situ$ YBa_2$Cu$Cu_3$$O_{7-x}$ (YBCO) film growth was demonstrated by means of the electron beam co-evaporation. Even though our oxygen pressure is low, ∼$5 ${\times}$10^{-5}$ Torr, we can synthesize as-grown superconducting YBCO films at a deposition rate of around 10 nm/s. Relatively high temperatures of around 90$0^{\circ}C$ was necessary in this process so far, and it suggests that this temperature at a given oxygen activity allows a Ba-Cu-O liquid formation along with an YBCO epitaxy. Local critical current density shows a clear correlation with local resistivity. Homogeneous transport properties with a large critical current density ($4 ∼ 5 MA/\textrm{cm}^2$ at 77K, 0T) are observed in top faulted region while it is found that the bottom part carries little supercurrent with a large local resistivity. Therefore, it is possible that thickness dependence of critical current density is closely related with a topological variation of good superconducting paths and/or grains in the film bodies. The information derived from it may be useful in the characterization and optimization of superconducting films for electrical power and other applications.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1794-1798
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• 2018

We have grown famatinite $Cu_3SbS_4$ films by using sulfurization of Cu/Sb stack film. Sulfurization at $500^{\circ}C$ produced famatinite $Cu_3SbS_4$ phase, while $400^{\circ}C$ and $450^{\circ}C$ sulfurization exhibited unreacted and mixed phases. The fabricated $Cu_3SbS_4$ film showed S-deficiency, and secondary phase of $Cu_{12}Sb_4S_{13}$. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/$Cu_3SbS_4$/Mo/glass, where $Cu_3SbS_4$ was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of $Cu_3SbS_4$ absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to $Cu_{12}Sb_4S_{13}$ phase). Thus in order to improve the cell efficiency, it is required to grow high quality $Cu_3SbS_4$ film with no S-deficiency and no secondary phase.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3233-3238
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• 2013

Two new Cu(II) complexes, $[Cu_2(acpy-mdtc)_2(HBA)(ClO_4)]{\cdot}H_2O$ (1) (acpy-mdtc- = 2-acetylpyridine S-methyldithiocarbamate and $HBA^-$ = benzilic acid anion) and $[Cu_2(acpy-phtsc)_2(HBA)]{\cdot}ClO_4$ (2) (acpy-$phtsc^-$ = 2-acetylpyridine 4-phenyl-3-thiosemicarbazate) have been synthesized and characterized by elemental analysis, infrared spectroscopy, thermogravimetric analysis, and single crystal X-ray diffraction. The X-ray analysis reveals that the structures of 1 and 2 are dinuclear copper(II) complexes bridged by two thiolate sulfur atoms of Schiff base ligand and bidentate bridging $HBA^-$ anion. For 1, each of the two copper atoms has different coordination environments. Cu1 adopts a five-coordinate square-pyramidal with a $N_2OS_2$ donor, while Cu2 exhibits a distorted octahedral geometry in a $N_2O_2S_2$ manner. For 2, two Cu(II) ions all have a five-coordinate square-pyramidal with a $N_2OS_2$ donor. In each complex, the Schiff base ligand is coordinated to copper ions as a tridentate thiol mode.