• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.13-16
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• 2000

(PbS)$_{1-x}$ -(CuS)$_{x}$ thin films(x=0, 0.5, 1) were grown on glass substrates by using a chemical bath deposition method. The molecular ratio of Pb to Cu for the PbS-CuS thin films(x=0.5) was measured about 7:3 by using EDX and XRF. The resistivity of non-annealed (PbS)$_{1-x}$ -(CuS)$_{x}$ thin films was about 10 $\Omega$ . cm. However, after annealing, the resistivity of PbS showed a little change, while PbS-CuS and CuS significantly decreased in the range of 0.002 to 0.005$\Omega$.cm. PbS was p-type and CuS was n-type.-type.

• The Journal of the Korea Contents Association
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• v.2 no.3
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• pp.146-151
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• 2002

The $Ca_{1-x}$Sr$_{x}$S:CuCl TFEL devices were fabricated by electron-beam deposition system and luminescent characteristics of the TFEL devices were studied. The SrS and CaS powders were mixed to form $Ca_{1-x}$Sr$_{x}$S host materials and 0.2 at% of CuCl was added as the activator. The luminance(lao) and peak emission wavelength of CaS:CuCl TFEL devices were 9.5 cd/m$^2$ and 492 nm, respectively. The luminance(L$_{30}$) and peak emission wavelength of SrS:CuCl TFEL devices were 633 cd/m$^2$ and 500 nm, respectively. It seems that the addition of CaS into the SrS host material generates blue shift of the EL emission characteristics but reduces the luminance and the luminous efficiency of the $Ca_{1-x}$Sr$_{x}$S:CuCl TFEL devices drastically.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.51.1-51.1
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• 2010

이번 연구에서는 저온 용액공정을 이용하여p-type 반도체로 많이 사용되고 있는 $Cu_xS$를 기판 위에 증착하여 그 특성을 분석하였다. $Cu_xS$는 x의 값에 따라 다섯가지의 결정구조를 가지는데 CuS, $Cu_{1.75}S$, $Cu_{1.8}S$, $Cu_{1.95}S$, $Cu_2S$ 들이 그것이다. 태양전지에서 p형 반도체로 중요한 역할을 담당하고 있는 $Cu_xS$는 cell에서 사용되었을 때 energy bandgap이 1.2-2.5eV일 때 가장 좋은 특성을 나타낸다. 이번 연구에서는 특히 조성에 따라서 물리적, 광학적으로 어떤 특성을 나타내는지에 대하여 XRD, SEM, Uv-vis 등의 분석을 해보았다. XRD의 경우 농도가 높아질수록 peak의 intensity는 커지지만 어느 농도 이상부터는 Cu가 Oxide화 되는 것을 관찰할 수 있었다. SEM image의 경우에는 조성에 따른 포면의 상태를 분석해보았다. 조성에 따른energy bandgap을 알아보기 위해서는 Uv-vis을 측정하였으며 이를 이용하여 증착된 박막의 투과도 역시 함께 분석해보았다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.29-35
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• 2000

Luminescent characteristics of SrS:Cu,X TFeL devices fabricated by electron-beam deposition system were studied. The SrS powders were used as the host materials and Cu, $CuF_2,\;Cu_2S$ or CuCl powders were added as the luminescent center. The emission spectra of the SrS:Cu,X TFEL devices strongly depended on coactivators. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:$Cu_2S$ TFEL device were 1443 cd/$m^2$ and 2.44 lm/w, respectively. Green color was observed from this TFEL device. The luminous efficiency of SrS:$Cu_2S$ TFEL device was higher than that of ZnS:Tb TFEL device, and it also could be good green phosphors for TFEL devices. The luminance($L_{40}$) and efficiency(${\eta}_{20}$) of SrS:CuCl TFEL device were 262 cd/$m^2$ and 0.26 lm/w, respectively. Blue color was emitted from this TFEL device.

• Advances in materials Research
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• v.13 no.1
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.363-367
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• 2006

The structure-property relations of ternary copper chalcogenides, $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ are examined. The density of states, band dispersions, and Fermi surfaces of these compounds are investigated to verify the reason of the metal-insulator transitions by extended Huckel tight-binding band calculations. The origin of the metalinsulator transitions of non-stoichiometric $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ is thought to be the electronic instability induced by their Fermi surface nesting.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.29-33
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• 2017

Formation of Au particles in nonstoichiometric $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxide from aniline + hydrochloric acid mixtures and chloroauric acid in the ratios 30 : 1; 60 : 1; 90 : 1 (S1-S3) by volume and 0.01 mol of copper acetate, $Cu(OCOCH_3)_2.H_2O$, in each case is performed by sol-gel growth. Powder x-ray diffraction (XRD) results show Au particles are dispersed in tetragonal nonstoichiometric dicopper (I) dicopper (II) oxides, $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$). Average crystallite sizes of Au particles determined using Scherrer equation are found to be in the approximate ranges ${\sim}85-140{\AA}$, ${\sim}85-150{\AA}$ and ${\sim}80-150{\AA}$ in S1-S3, respectively which indicate the formation of Au nano-micro size particles in $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Hysteresis behaviour at 300 K having low loop areas and magnetic susceptibility values ${\sim}5.835{\times}10^{-6}-9.889{\times}10^{-6}emu/gG$ in S1-S3 show weakly ferromagnetic nature of the samples. Broad and isotropic electron paramagnetic resonance (EPR) lineshapes of S1-S4 at 300, 77 and 8 K having $g_{iso}$-values ${\sim}2.053{\pm}0.008-2.304{\pm}0.008$ show rapid spin-lattice relaxation process in magnetic $Cu^{2+}$ ($3d^9$) sites as well as delocalized electrons in Au ($6s^1$) nano-micro size particles in the $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Broad and weak UV-Vis diffuse reflectance optical absorption band ~725 nm is assigned to $^2B_{1g}{\rightarrow}^2A_{1g}$ transitions, and the weak band ~470 nm is due to $^2B_{1g}{\rightarrow}^2E_g$ transitions from the ground state $^2B_{1g}$(${\mid}d_{x^2-y^2}$>) of $Cu^{2+}$ ($3d^9$) ions in octahedral coordination having tetragonal distortion.

• Journal of the Korean Applied Science and Technology
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• v.27 no.4
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• pp.445-451
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• 2010

To prepare very stable acrylic type emulsion having a visible ray absorption property, in-situ preparation technique of $Cu_xS$ nanoparticle was adopted. Firstly, the acylic emulsions of methyl methacrylate(MMA), butyl acrylate(BA), and acrylonitrile(AN) were synthesized by pre-emulsion polymerization at $60^{\circ}C$ in the presence of anionic surfactant. Secondly, $Cu_xS$ nanocomposited emulsions were directly prepared in the prepolymerized acrylic emulsion with $CuSO_4$ at $50^{\circ}C$. The presnce of $Cu_xS$ nanoparticle in emulsion was confirmed by SEM and EDS. The final $Cu_xS$ nanocomposited emulsion showed an olive-green colour and good emulsion stability up to 1 month. In addition the PET films coated with our $Cu_xS$ nanocomposited emulsion absorbed effectively the visible ray.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.296-302
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• 1994

Polycrystalline CuInSeS12T thin were prepared by depositing Cu/In layer, which was sequentially sputtered varying the Cu/(Cu+In) mole ratio, on glass substrate and selenizing with selenium metal vapor in a nitrogen atmosphere. Compositional and structural, characterization was carried out by X-ray diffraction (XRD), wavelength-dispersive spectroscopy(WDS), and scanning electron microscope(SEM). Electrical characterization was carried out by the measurements of Hall effect, electrical resistivity. Large indium loss occurs in early stage of the selenization process. The selenized films which had mole ratios larger than 0.28 have chalcopyrite CuInSeS12T phase and these that had less mole ratios have sphalerite phase. The selenized films containing CuS1xTSe phase have Cu-rich CuInSeS12T phase and these that did not contain CuS1xTSe have In-rich CuInSeS12T phase. By optimizing the sputtering conditions,it is possible to fabricate CuInSeS12T thin films which have little secondary phases and an appropriate hole concentration (10S015T ~ 10S016TcmS0-3T) for solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.49-53
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• 1997

In this paper, YbBa$_{2}$Cu$_{3}$O$_{x}$ superconductor was sintered by means of conventional solid reaction and the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ was prepared by the Melted-Condensed Process in which SmBa$_{2}$Cu$_{3}$O$_{x}$ crystal was used as seed crystal to introduce the YbBa$_{2}$Cu$_{3}$O$_{x}$ crystal growth. The texture of YbBa$_{2}$Cu$_{3}$O$_{x}$ was examined by X-ray diffraction, and the fracture of YbBa$_{2}$Cu$_{3}$O$_{x}$ sample was observed by SEM, which proved the sample was well oriented. After oxygen absorption of the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ sample, it's critical temperature was measureed to be 86K.eed to be 86K.