• 한국재료학회지
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• 제7권1호
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• pp.81-88
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• 1997

유리 형성제로 $B_{2}O_{3}$를 사용하고 CuO를 첨가한 vanadate계 3성분계 유리의 전기적 특성을 조사하였다. 각 조성별 결정화온도에서 열처리 시간을 다르게 하여 생성되는 결정상을 조사 하였으며, 결정화 특성에 따른 직류 전기 전도도의 변화를 분헉하였다. 생성 결정물은 XRD 분석결과 $V_{2}O_{5},\;{\alpha}-CuV_{2}O_{6}$로 판명 되었으며, 열처리 시간에 따라 $V_{2}O_{5}\;와\;{\beta}-CuV_{2}O_6$의 결정화도는 별다른 변화가 없었으나 ${\alpha}-CuV_{2}O_{6}$의 결정화도는 크게 변화하였고 ${\alpha}-CuV_{2}O_{6}$의 결정화도 증가에 따라 전기 전도도가 증가 하였다. 전기 전도도는 상온(303K)에서 유리 조성을 변화시켜 $10^{-2}~-10^{-4}{\Omega}^{-1}cm^{-1}$ 범위로 조절될수 있었다. $V_{2}O_{5}$ 함량이 증가할수록, 염기도($CuO/B_{2}O_{3}$)가 감소할수록 전기 전도도가 증가 하였다. 이 유리의 charge carrier는 전자인 n-type 반도체임이 seebeck coefficient 측정결과 판명되었으며, 전자 전도에 대한 활성화 에너지는 0.098-0.124eV로 계산되어졌다. 측정 온도인 $30~200^{\circ}C$에서 small polaron hopping conduction이 발생함이 관찰되었고, variable range hopping은 보이지 않았다.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.475-480
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• 2001

Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.934-937
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• 2003

Glasses in the system $CuO-P_2O_5-V_2O_5$ were prepared by a press-quenching method on the copper plate. The glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from $10^{-6}s.Cm^{-1}$ at room temperature, but the conductivities of the glass-ceramics were $10^{-3}s.Cm^{-1}$ increased by $10^3$ order. The crystalline product in the glass-ceramics was $CuV_2O_6$. Heat-treatment conditions influenced the crystal growth of $CuV_2O_6$ and conductivity. The linear relationship between in (${\sigma}T$) and $T^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Journal of the Korean Physical Society
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• 제81권
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• pp.867-875
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• 2022

This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuO_x) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu₂O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu₂O, was measured for samples prepared with an OP of 20%. In addition, only Cu⁺ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu²⁺ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu₂O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuO_x thin films could be constantly converted from n-type CuO to p-type Cu₂O by decreasing the oxygen partial pressure. Thin film transistors with Cu₂O deposited at 20% OP revealed p-type characteristics such as onset voltage (V_ON) of -3 V, saturated hole mobility of 8 cm²/Vs at V_GS = -28 V, subthreshold swing of 0.86 V/decade at V_GS-V_ON = -0.5 V, and on/off ratio of 1.14 × 10³.

• 대한화학회지
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• 제55권4호
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• pp.666-672
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• 2011

Vanadium 치환체인 polyoxometalate 1, [Cu(2,2'-bipy)]$[Cu(2,2'-bipy)_2]_2[PMo_8V_6O_{42}]{\cdot}1.5H_2O$을 가지고 있는 inorganicorganic complex의 촉매 활성도를 Biginelli 반응에 적용하여 연구하였다. Dihydropyrimidinones를 one-pot 합성하는 반응에서, $H_3PMo_{12}O_{40}$ 촉매 보다[Cu(2,2'-bipy)]$[Cu(2,2'-bipy)_2]_2[PMo_8V_6O_{42}]{\cdot}1.5H_2O$ 촉매가 더 좋은 결과를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.291-294
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• 2000

The crystallization behavior and dc Conductivities of CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ glasses prepared by quenching on the copper plate were investigated. The conductivities of the glasses were range from 10$^{-5}$ s.$cm^{-1}$ / at room temperature, but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^2$order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . The linear relationship between in($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping mechanism.

• Bulletin of the Korean Chemical Society
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• 제26권8호
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• pp.1185-1189
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• 2005

Two new copper vanadium borophosphate compounds, $(NH_4)(C_2H_{10}N_2)_{5.5}[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6{\cdot}17H_2O,\;Cu-VBPO1\;and\;(NH_4)(C_2H_{10}N_2)_{3.5}[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6{\cdot}18H_2O$, Cu-VBPO2 have been hydrothermally synthesized and characterized by single crystal X-ray diffraction, thermogravimetric analysis, IR spectroscopy, and elemental analysis. The structure of Cu-VBPO1 contains a layer anion, {$[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6$}$^{12-}$, whereas Cu-VBPO2 has an open framework anion, {$[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6$}$^{8-}$. Crystal Data: $(NH_4)(C_2H_{10}N_2)_{5.5}[Cu(C_2H_8N_2)_2]_3[V_2P_2BO_{12}]_6{\cdot}17H_2O$, monoclinic, space group I2/m (no. 12), $\alpha$ = 15.809(1) $\AA$, b = 31.107(2) $\AA$, c = 12.9343(8) $\AA$, $\beta$ = 104.325(1)$^{\circ}$, Z = 2; $(NH_4)(C_2H_{10}N_2)_{3.5}[Cu(C_2H_8N_2)_2]_5[V_2P_2BO_{12}]_6{\cdot}18H_2O$, tetragonal, space group $P4_2$/mnm (no.136), $\alpha$ = 26.832(1) $\AA$, c = 18.021(1) $\AA$, Z = 4.

• Bulletin of the Korean Chemical Society
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• 제18권9호
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• pp.916-922
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• 1997

A superconducting phase La2CuO4+δ (Tc=44 K) has been prepared by electrochemical oxidation which allows the oxygen to intercalat into the La2O2 layers. According to the Cu K-edge X-ray absorption near edge structure spectroscopic analysis, the oxidized phase shows an overall spectra shift of about 0.5 eV to a higher energy region compared to the as sintered one with the occurrence of an additional peak corresponding to the transition to the |1s13dn+1L-14pσ1 > final state, indicating the oxidation of CuO2 layer. From the X-ray photoelectron spectroscopic studies, it is found that the binding energy of La 3d5/2 is significantly shifted from 834.3 eV (as sintered La2CuO4) to 833.6 eV (as electrochemically oxidized La2CuO4+δ), implying that the covalency of the (La-O) bond is decreased due to the oxygen intercalation. The O 1s spectra do not provide an evidence of the superoxide or peroxide, but the oxide (O2-) with the contaminated carbonate (CO32-) based on the peaks at 529 eV and 532 eV, respectively, which is clearly confirmed by the Auger spectroscopic analysis. Oxygen contents determined by iodometric titration (δ=0.07) and thermogravimetry (δ=0.09) show good coincidence each other, also giving an evidence for the "O2-" nature of excess oxygen. From the above results, it is concluded that "O2-" appeared as O 1s peak at 528.6 eV is responsible for superconductivity of La2CuO4+δ.

• 한국재료학회지
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• 제26권11호
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• pp.604-610
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• 2016

We report on the fabrication and characterization of a novel $Cu_2O/CuO$ heterojunction structure with CuO nanorods embedded in $Cu_2O$ thin film as an efficient photocathode for photoelectrochemical (PEC) solar water splitting. A CuO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method; then, a $Cu_2O$ thin film was electrodeposited onto the CuO nanorod array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/CuO$ heterojunction photocathode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/CuO$ photocathode was found to exhibit negligible dark current and high photocurrent density, e.g. $-1.05mA/cm^2$ at -0.6 V vs. $Hg/HgCl_2$ in $1mM\;Na_2SO_4$ electrolyte, revealing the effective operation of the oxide heterostructure. The photocurrent conversion efficiency of the $Cu_2O/CuO$ photocathode was estimated to be 1.27% at -0.6 V vs. $Hg/HgCl_2$. Moreover, the PEC current density versus time (J-T) profile measured at -0.5 V vs. $Hg/HgCl_2$ on the $Cu_2O/CuO$ photocathode indicated a 3-fold increase in the photocurrent density compared to that of a simple $Cu_2O$ thin film photocathode. The improved PEC performance was attributed to a certain synergistic effect of the bilayer heterostructure on the light absorption and electron-hole recombination processes.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.204.1-204
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• 2003