• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.136-143
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• 1997

The photvoltaic power system has received considerable attention as the petroleumalterative energies to the environmental problems in the wored scale. $CuLnSe_2$is one ofthe most promising materials for the fabrication of large-area modules and low cost photovoltaic devices. Sulfur solute CuInSe2 thin films were prepared by RF sputtering using powder targer which were previously compacted by powder of $Cu_2Se, \;In_2Se_3, \;Cu_2S, \;and\;In_2S_3$ in various ratios. The results induicated that the sulfur ratio, the(112) texture, and the energy band gap were increased by the increase of the S/(S+Se) that was controlled by stoichiometric compound. The energy band gap can be shifted from 1.04eV to 1.50eV by abjusting the S/(S+Se) ratio, which maich it possible to obtain perfect match to the solar spectrum.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.27-31
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• 2015

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

• Tribology and Lubricants
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• v.23 no.2
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• pp.66-72
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• 2007

[ $MoS_2$ ], is a well-known metal sulfide applied as solid lubricants and an additive to prolong the life of sintered bearings under severe conditions. However, the high price of $MoS_2$ limited its wide application. This study is aimed to investigate the possibility far application to solid lubricants for $Cu_2S$ as a substitute of $MoS_2$. Bronzes added $Cu_2S$ and $MoS_2$, are produced by powder metallurgy in this study, and then evaluated their friction and wear properties., as well as sintered bronze. The sliding wear test using pin-on-disc type machine, was conducted at several sliding speeds for three type test pieces sintered bronzes added $Cu_2S$ and $MoS_2$, and sintered bronze without lubricants. Addition of $Cu_2S$ to bronze leads to relatively good friction properties, although it is not so good as addition of $MoS_2$. However, the wear properies of sintered bronze added $Cu_2S$ are better than that of sintered bronze added $MoS_2$.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.348-354
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• 2009

Copper(II) complexes with tetraoxo dithia tetraaza macrocyclic ligands; [18]ane$N_4S_2$: 1,4,10,13-tetraaza-5,9,14,18-tetraoxo-7,16-dithia-cyclooctadecane, [20]ane$N_4S_2$: 1,5,11,15-tetraaza-6,10,16,20-tetraoxo-8,18-dithia-cyclocosane,Bzo2[18]ane$N_4S_2$: dibenzo-1,4,10,13-tetraaza-5,9,14,18-tetraoxo-7,16-dithia-cyclooctadecane, Bzo2[20]ane$N_4S_2$: dibenzo-1,5,11,15-tetraaza-6,10,16,20-tetraoxo-8,18-dithia-cyclocosane; were entrapped in the nanopores of zeolite-Y by a two-step process in the liquid phase: (i) adsorption of [bis(diamine)copper(II)] (diamine = 1,2-diaminoethane, 1,3-diaminopropane, 1,2-diaminobenzene, 1,3-diaminobenzene); $[Cu(N-N)_2]^{2+}$-NaY; in the nanopores of the zeolite, and (ii) in situ template condensation of the copper(II) precursor complex with thiodiglycolic acid. The obtained complexes and new host-guest nanocomposite materials; $[Cu([18]aneN_4S_2)]^{2+}-NaY,\;[Cu([20]aneN_4S_2)]^{2+}-NaY,\;[Cu(Bzo_2[18]aneN_4S_2)]^{2+}-NaY,\;[Cu(Bzo_2[20]aneN_4S_2)]^{2+}$-NaY; have been characterized by elemental analysis FT-IR, DRS and UV-Vis spectroscopic techniques, molar conductance and magnetic moment data, XRD and, as well as nitrogen adsorption. Analysis of data indicates all of the complexes have been encapsulated within nanopore of zeolite Y without affecting the zeolite framework structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.279-280
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• 2008

For the manufacture of the $CuGaS_2$, Cu, Ga and S were vapor-deposited in the named order. Among them, Cu and Ga were vapor-deposited by using the Evaporation method in consideration of their adhesive force to the substrate so that the composition of Cu and Ga might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from R.T.[$^{\circ}C$] to 150$[^{\circ}C]$ at intervals of 50$[^{\circ}C]$. As a result, at 400$[^{\circ}C]$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known from this experimental result that it is the optimum condition to conduct Annealing on the $CuGaS_2$ thin film under a vacuum when the $CuGaS_2$ thin film as an optical absorption layer material for a solar cell is manufactured.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.158-163
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• 2011

$CuInS_2$ thin films were prepared using a sol-gel spin-coating method. That makes large scale substrate coating, simple equipment, easy composition control available. The structural and optical properties of $CuInS_2$ thin films that include less toxic materials (S) instead of Se, tetragonal chalcopyrite structure. Copper acetate monohydrate ($Cu(CH_3COO)_2{\cdot}H2O$) and indium acetate ($In(CH_3COO)_3$) were dissolved into 2-propanol and l-propanol, respectively. The two solutions were mixed into a starting solution. The solution was dropped onto glass substrate, rotated at 3000 rpm, and dried at $300^{\circ}C$ for Cu-In as-grown films. The as-grown films were sulfurized inside a graphite container box and chalcopyrite phase of $CuInS_2$ was observed. To determine the optical properties measured optical transmittance of visible light region (380~770 nm) were less than 30 % in the overall. The XRD pattern shows that main peak was observed at Cu/In ratio 1.0 and its orientation was (112). As annealing temperature increases, the intensity of (112) plane increases. The unit cell constant are a = 5.5032 and c = 11.1064 $\AA$, and this was well matched with JCPDS card. The optical transmittance of visible region was below than 30 %.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.97-97
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• 2014

The properties of thin film solar cells based on electrodeposited $CuIn(Se,S)_2$ were investigated. The proposed solar cell fabrication method involves a single-step $CuInSe_2$ thin film electrodeposition followed by sulfurization in a tube furnace to form a $CuIn(Se,S)_2$ quaternary phase. A sulfurization temperature of $450-550^{\circ}C$ significantly affected the performance of the $CuIn(Se,S)_2$ thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall band gap of the $CuIn(Se,S)_2$ thin film. The highest conversion efficiency of 3.12% under airmass(AM) 1.5 illumination was obtained from the $500^{\circ}C$-sulfurized solar cell. The highest External Quantum Efficiency(EQE) was also observed at the sulfurization temperature of $500^{\circ}C$.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.69-72
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• 2014

We investigated current-voltage (I-V) and capacitance (C)-V characteristics of solution-processed thin film solar cells, consisting of $Cu(In,Ga)S_2$ and $CuInS_2$ stacked absorber layers. The ideality factors, extracted from the temperature-dependent I-V curves, showed that the tunneling-mediated interface recombination was dominant in the cells. Rapid increase of both series- and shunt-resistance at low temperatures would limit the performance of the cells, requiring further optimization. The C-V data revealed that the carrier concentration of the $CuInS_2$ layer was about 10 times larger than that of the $Cu(In,Ga)S_2$ layer. All these results could help us to find strategies to improve the efficiency of the solution-processed thin film solar cells.

• Advances in materials Research
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• v.13 no.1
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• pp.55-62
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• 2024

Cu-based sulfides have recently emerged as promising thermoelectric (TE) materials due to their low cost, non-toxicity, and abundance. In this research, point defect structure of Cu_2-xZnSnS₄ (x=0.1, 0.2, 0.3) samples were synthesized by the mechanical alloying method. Mixed powders of Cu, Zn, Sn and S were milled using high energy ball milling at a rotation speed of 300 rpm in Ar atmosphere. The milled Cu_2-xZnSnS₄ powders were heat-treated at 723 K for 24 h, and subsequently consolidated using spark plasma sintering (SPS) under an applied pressure of 60 MPa for 15 min. The thermal conductivity of the sintered Cu_2-xZnSnS₄ samples was evaluated. A well-defined Cu_2-xZnSnS₄ powders were successfully formed after milling for 16 h, with the particle sizes mostly distributed in the range of 60-100 nm. The lattice constants of aand cdecreased with increasing composition value x. The thermal conductivity of sintered x=0.1 sample exhibited the lowest value and attained 0.93 W/m K at 673 K.

• Journal of the Korean Society for Heat Treatment
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• v.11 no.2
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• pp.111-120
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• 1998

The effects of chemical composition and thermal cycling on the martensitic transformation characteristics in Cu-rich, equiatomic and Zr-rich CuZr binary alloys have been studied by calorimetry. Only martensite could be indentified in equiatomic $Cu_{49.9}Zr_{50.1}$ alloy, while $Cu_{10}Zr_7$ and $CuZr_2$ intermetallic compounds as well as martensite were formed by rapid cooling from the melts in Cu-rich $Cu_{52.2}Zr_{47.5}$ alloy and Zr-rich $Cu_{48.4}Zr_{51.6}$ alloy, respectively. The $M_s$ temperature of $Cu_{49.9}Zr_{50.1}$ was $156^{\circ}C$ but those of $Cu_{52.5}Zr_{47.5}$ and $Cu_{48.4}Zr_{51.6}$ alloys, being $109^{\circ}C$ and $138^{\circ}C$, were lower than that of equiatomic $Cu_{49.9}Zr_{50.1}$ alloy. In all the alloys, the $M_s$ temperature has fallen but the $A_s$ temperature has risen, resulting in widening of the transformation hysteresis with thermal cycling. The anomalous characteristics in the transformation temperature are due to the presence of the intermetallic compounds i.e. $Cu_{10}Zr_7$ and $CuZr_2$ formed by an eutectoid reaction during thermal cycling in the temperature range between $-100^{\circ}C$ < $T_c$ < $400^{\circ}C$.