• Title/Summary/Keyword: $Cu^+$

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Effect of Solder Structure on the In-situ Intermetallic Compounds growth Characteristics of Cu/Sn-3.5Ag Microbump (Cu/Sn-3.5Ag 미세범프 구조에 따른 실시간 금속간화합물 성장거동 분석)

  • Lee, Byeong-Rok;Park, Jong-Myeong;Ko, Young-Ki;Lee, Chang-Woo;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.45-51
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    • 2013
  • Thermal annealing tests were performed in an in-situ scanning electron microscope chamber at $130^{\circ}C$, $150^{\circ}C$, and $170^{\circ}C$ in order to investigate the effects of solder structure on the growth kinetics of intermetallic compound (IMC) in Cu/Sn-3.5Ag microbump. Cu/Sn-3.5Ag($6{\mu}m$) microbump with spreading solder structure showed $Cu_6Sn_5$ and $Cu_3Sn$ phase growths and then IMC phase transition stages with increasing annealing time. By the way, Cu/Sn-3.5Ag($4{\mu}m$) microbump without solder spreading, remaining solder was transformed to $Cu_6Sn_5$ right after bonding and had only a phase transition of $Cu_6Sn_5$ to $Cu_3Sn$ during annealing. Measured activation energies for the growth of the $Cu_3Sn$ phase during the annealing were 0.80 and 0.71eV for Cu/Sn-3.5Ag($6{\mu}m$) and Cu/Sn-3.5Ag($4{\mu}m$), respectively.

Intermetallic Formation between Sn-Ag based Solder Bump and Ni Pad in BGA Package (BGA 패키지에서 Sn-Ag계 솔더범프와 Ni pad 사이에 형성된 금속간화합물의 분석)

  • Yang, Seung-Taek;Chung, Yoon;Kim, Young-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.2
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    • pp.1-9
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    • 2002
  • The intermetallic formation between Sn-Ag-(Cu) solders and metal pads in a real BGA package was characterized using SEM, EDS, and XRD. The intermetallic phase formed in the interface between Sn-Ag-Cu and Au/Ni/Cu pad is likely to be ternary compound of $(Cu,Ni)_6Sn_5$ from EDS analysis High concentration of Cu was observed in the solder/Ni interface. XRD analysis confirmed that $\eta -Cu_6 Sn_5$ type was intermetallic phase formed in the interface between Cu containing solders and Ni substrates and $Ni_3$Sn_4$ intermetallic was formed in the Sn-Ag solder/Ni interface. The thickness of intermetallic phase increased with the reflow times and Cu concentration in solder.

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A Study of the Interfacial Reactions between Various Sn-Ag-Cu Solder Balls and ENIG (Electroless Ni Immersion Gold) and Cu-OSP (Organic Solderability Preservative) Metal Pad Finish (다양한 조성의 Sn-Ag-Cu 합금계 무연 솔더볼과 ENIG(Electroless Ni Immersion Gold), Cu-OSP(Oraganic Solderability Preservertive) 금속 패드와의 계면 반응 연구)

  • Park, Yong-Sung;Kwon, Yong-Min;Son, Ho-Young;Moon, Jeong-Tak;Jeong, Byung-Wook;Kang, Kyung-In;Paik, Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.4
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    • pp.27-36
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    • 2007
  • In this study, we investigated the interfacial reactions between various Sn-Ag-Cu(SAC) solder alloys and ENIG(Electroless Ni Immersion Gold) and Cu-OSP(Organic Solderability Preservative) pad finish. In the case of the interfacial reaction between Sb added SAC solder and ENlf thinner P-rich Ni layer was formed at the interface. In the case of the interfacial reaction between Ni added SAC solder and Cu-OSP, the uniform $Cu_6Sn_5$, intermetallic compounds(IMCs) were formed and $Cu_6Sn_5$ grain did not grow after multiple reflows. Thinner $Cu_3Sn$ IMCs were farmed at the interface between $Cu_6Sn_5$ and Cu-OSP after $150^{\circ}C$ thermal aging.

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Interfacial Reactions of Sn-Ag-Cu solder on Ni-xCu alloy UBMs (Ni-xCu 합금 UBM과 Sn-Ag계 솔더 간의 계면 반응 연구)

  • Han Hun;Yu Jin;Lee Taek Yeong
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.84-87
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    • 2003
  • Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

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Structure and Superconducting Properties of Ba-substituted (Ru,Cu)(Sr,Eu)$_2$(Eu,Ce)$_2Cu_2O_z$ System (Ba 치환에 따른 (Ru,Cu)(Sr,Eu)$_2$(Eu,Ce)$_2Cu_2O_z$ 계의 초전도 특성)

  • Lee, H.K.
    • Progress in Superconductivity
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    • v.13 no.1
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    • pp.12-17
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    • 2011
  • We investigated the effects of Ba and Cu co-substitution on the structural and superconducting properties of ($Ru_{1-y}Cu_y$)($Sr_{1.67-x}Ba_xEu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ samples. X-ray diffraction(XRD) reveals that single-phase samples can be obtained in the range from x = 0.1 to 0.2 for ($Ru_{0.5}Cu_{0.5}$)($Sr_{1.67-x}Ba_xEu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ and from y = 0.25 to 0.5 for ($Ru_{1-y}Cu_y$)($Sr_{1.47}Ba_{0.2}Eu_{0.33}$)($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$, respectively. All samples with compositions of ($Ru_{0.5}Cu_{0.5}$)($Sr_{1.67-x}Ba_xEu_{0.33}$) ($Eu_{1.34}Ce_{0.66}$)$Cu_2O_z$ (x = 0 - 0.33) show superconducting transition behavior and the onset transition temperature decreases slightly with increasing x in consistent with the change of hole concentration estimated from room temperature thermoelectric power measurements. The XRD and resistivity measurements for the ($Ru_{1-y}Cu_y$)($Sr_{1.47}Ba_{0.2}Eu_{0.33}$)($Eu_{1.34}Ce_{0.66}$) $Cu_2O_z$ system indicate that the partial substitution of Cu for Ru is necessary to form phase pure samples, but result in a small change in transition temperature in the single-phase region from x = 0.25 to 0.5.

Improvement in Tensile Strength, Scratch Resistance and Tribological Performance of Cu-based Bimetals by Surface Modification Technology (표면개질 기술에 의한 Cu 기반 바이메탈의 인장강도, 스크래치 저항성 및 트라이볼로지 성능 향상)

  • Karimbaev, R.;Amanov, A.
    • Tribology and Lubricants
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    • v.37 no.3
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    • pp.83-90
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    • 2021
  • In this study, an ultrasonic nanocrystal surface modification (UNSM) was used to improve the mechanical properties, scratch resistance and tribological performance of Cu-based bimetals, which are usually used to manufacture sliding bearings and bushings for internal combustion engines (ICEs). Two different Cu-based bimetals, namely CuPb10Sn10 and CuSn10Bi7, were sintered onto a low carbon steel substrate. The mechanical properties and dry tribological performance using a tensile tester and micro-tribo tester were evaluated, respectively. The scratch resistance was assessed using a micro-scratch tester at an incremental load. The tensile test results showed that the yield strength (YS) and ultimate tensile strength (UTS) of both Cu-based bimetals increased after UNSM. Furthermore, the scratch and tribological tests results revealed that the scratch resistance and tribological performance of both Cu-based bimetals were improved by the application of UNSM. These improvements were mainly attributed to the eliminated pores, increased hardness and reduced roughness after UNSM. CuSn10Bi7 demonstrated better mechanical properties, scratch resistance and tribological performance than CuPb10Sn10. It was found that the presence of Bi in CuSn10Bi7 formed a Cu11Bi7 intermetallic phase, which is harder than Cu3Sn. Hence, CuSn10Bi7 demonstrated higher strength and wear resistance than CuPb10Sn10. In addition, a CuSn10Bi7 formed both SnO2 and Bi2O3 that prevented adhesion and improved the tribological performance. It can be expected that under dry tribological conditions, ICEs can utilize UNSM bearings and bushings made of CuSn10Bi7 instead of CuPb10Sn10 under oil-lubricated conditions.

Surface Analysis of Copper-Tin Thin Films Synthesized by rf Magnetron Co-sputtering

  • Gang, Yu-Jin;Park, Ju-Yeon;Gang, Yong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.272.2-272.2
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    • 2016
  • Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

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Effects of Citric Acid as a Complexing Agent on Material Removal in Cu CMP (Cu CMP에서 Citric Acid가 재료 제거에 미치는 영향)

  • Jung Won-Duck;Park Boum-Young;Lee Hyun-Seop;Jeong Hea-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.10
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    • pp.889-893
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    • 2006
  • Chemical mechanical polishing (CMP) achieves surface planrity through combined mechanical and chemical means. The role of slurry is very important in metal CMP. Slurry used in metal CMP normally consists of oxidizers, complexing agents, corrosion inhibitors and abrasives. This paper investigates the effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$. In order to study chemical effects of citric acid, X-ray photoelectron spectroscopy (XPS) was peformed on Cu sample after etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but $CU/CU_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu surface decrease. According to decrease of wear resistance on Cu surface removal rate increases from $285\;{\AA}/min\;to\;8645\;{\AA}/min$ in Cu CMP.

Research of luminescent characteristics of ZnS:CuCl powder electroluminescent device according to the doping concentration of CuCl and frequency of the applied voltage (ZnS:Cu,Cl 후막형 전계 발광 소자의 CuCl 첨가량과 인가 전압의 진동수에 따른 발광 특성 연구)

  • Park, Yong-Kyu;Sung, Hyun-Ho;Cho, Whang-Sin;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.22-25
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    • 2000
  • ZnS:Cu,Cl 형광체의 여기 및 발광 스펙트럼 측정 결과 주게인 $Cl^-$ 이온과 받게인 $Cu^+$ 이온 사이의 흡수와 발광에 기인하는 peak과 국소화된 발광 중심인 $(CU_2)^{2+}$ 이온의 흡수와 발광에 기인하는 peak이 관측되었다. CuCl의 첨가량이 증가함에 따라 $Cu^+$ 이온의 농도가 증가하게 되어 $(Cu_2)^{2+}$ 이온에 기안하는 발광으로부터 공명 에너지 전달 (Resonant Energy Transfer)의 확률이 높아지기 때문에 513 nm를 중심으로 하는 발광의 세기가 증가하게 된다. 자체 제작한 ZnS:Cu,Cl 형광체를 이용하여 제작한 소자의 휘도 측정결과 400 Hz, 100 V 에서 CuCl 의 첨가량이 0.2 mole% 일 때 휘도가 최대였고, 진동수가 증가함에 따라 휘도가 포화되는 현상이 나타났다. CuCl의 첨가량이 증가함에 따라 513 nm를 중심으로 하는 발광이 강해지고 CIE 좌표값이 녹색영역으로 이동하게 된다. 진동수가 증가하면 인가된 전압의 유지 시간이 짧아지게 되어 발광의 감쇄시간이 긴 513 nm를 중심으로 하는 발광보다 감쇄시간이 짧은 458 nm를 중심으로 하는 발광이 강해지게 되고, CIE 좌표값이 청색영역으로 이동하게 된다.

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On the Properties and Synthesis of Nanostructured W-Cu alloys by Mechanical Alloying(II) Sintering Behavior of MA NS W-Cu Composite Powders (기계적 합금화 방법으로 제조된 nanostructured W-Cu 합금의 제조 및 물성 연구(II) -MA NS W-Cu 복합분말의 소결거동-)

  • 김진천
    • Journal of Powder Materials
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    • v.5 no.2
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    • pp.89-97
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    • 1998
  • Sintering behavior of nanostructured(NS) W-Cu powders prepared by mechanical alloying (MA) was investigated as a function of sintering temperature. MA NS W-2owt%Cu and W-3owt%Cu composite powders with the crystal size of 20-30 nm were annealed at 90$0^{\circ}C$, and thermal characteristics of those powders were investigated by DSC. Sintering behavior of MA NS W-Cu composite powders was investigated during the solid-state sintering and the Cu-liquid phase sintering. The new nanosintering phenonenon of MA W-Cu powders at solid-state sintering temperature was suggested to explain the W-grain growth in the inside of MA powders. The sintering densification of MA NS W-Cu powders was enhanced at Cu melting temperature by arrangement of MA powders, i.e., the first rearrangement of MA powders was occurred, and then the rearrangement of W-grains in the sintered parts was also took place during liquid-phase sintering, i.e., the second rearrangement was happened. Due to the double rearrangement process of MA NS W-Cu powders, the high sintered density with more than 96%o was obtained and the fine and high homogeneous state of W and Cu phases was achieved by sintering at 1200 $^{\circ}C$.

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