• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.279-282
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• 1999

Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute A1-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of E-beam Cu and Al in The same conditions.

• Clean Technology
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• v.16 no.2
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• pp.132-139
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• 2010

The Cu-Mn mixed oxide catalysts with different molar ratios of Cu/(Cu+Mn) prepared by co-precipitation method have been investigated in CO oxidation at $30^{\circ}C$. The catalysts used in this study were characterized by X-ray Diffraction (XRD), $N_2$ sorption, X-ray photoelectron spectroscopy (XPS), and $H_2$-temperature programmed reduction $(H_2-TPR)$ to correlate with catalytic activities in CO oxidation. The $N_2$ adsorption-desorption isotherms of Cu-Mn mixed oxide catalysts showed a type 4 having pore range of 7-20 nm and BET surface area was increased from 17 to $205\;m^2{\cdot}g^{-1}$ with increasing of Mn content. The XPS analysis showed the surface oxidation state of Cu and Mn represented $Cu^{2+}$and the mixture of $Mn^{3+}$ and $Mn^{4+}$, respectively. Among the catalysts studied here, Cu/(Cu+Mn) = 0.5 catalyst showed the highest activity at $30^{\circ}C$ in CO oxidation and the catalytic activity showed a typical volcano-shape curve with respect to Cu/(Cu+Mn) molar ratios. The water vapor showed a prohibiting effect on the efficiency of the catalyst which is due to the competitive adsorption of carbon monoxide on the active sites of catalyst surface and finally the formation of hydroxyl group with active metals.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.13-19
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• 2000

Shear strengths of BGA solder joints on Cu pads were studied for Cu-containing Sn (0, 1.5, and 2.5 wt.% Cu) and Sn-40Pb (0 and 0.5wt.% Cu) solders, with emphasis on the roles of the Cu-Sn intermetallic layer thickness and the roughness of the interface between the intermetalic layer and solder. The shear strength test was performed for as-soldered solder joints with various soldering reaction times up to 4 min. The addition of Cu to the pure Sn solder results in an enhanced growth of the intermetallic layer whereas the effect of Cu addition to the Sn-40Pb solder is primarily on the reduction of the roughness of the intermetallic/solder interface. The critical thickness of the intermetallic layer for a maximum shear strength depends on the solder materials, which was measured to be ~ 2.3 $\mu\textrm{m}$ for Sn-Cu solders and ~ 1.2 $\mu\textrm{m}$ for Sn-Pb-Cu solders. The shear strength at the critical intermetallic layer thickness seems to increase as the intermetallic/solder interface becomes rougher. This is in accordance with the observation that the sheared fracture occurred initially within the solder tends to shift towards the intermetallic/solder interface as the intermetallic layer grows above the critical thickness.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.47-51
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• 2013

Chemical mechanical polishing (CMP) has become one of the key processes in wafer level stacking technology for 3D stacked IC. In this study, two-step CMP process was proposed to polish $Cu/SiO_2$ hybrid bonding surface, that is, Cu CMP was followed by $SiO_2$ CMP to minimize Cu dishing. As a result, Cu dishing was reduced down to $100{\sim}200{\AA}$ after $SiO_2$ CMP and surface roughness was also improved. The bonding interface showed no noticeable dishing or interface line, implying high bonding strength.

• Journal of the Korean Chemical Society
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• v.38 no.9
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• pp.632-639
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• 1994

For dye sensitization of zinc oxide in the visible region, copper phthalocyanine(CuPc) and sunfast yellow(SY) were adsorbed in two layers on zinc oxide powder. The adsorption structures of $\alpha-and\beta-CuPc$ on zinc oxide were investigated by photoacoustic, IR and Raman spectra. The ${\alpha}-and\;{\beta}$-polymorphs exhibited dimeric structure or molecular aggregates. The surface photovoltaic effect of ZnO/CuPc/SY showed higher than that of ZnO/SY/CuPc and $ZnO/\beta-CuPc/SY$ indicated better photosensitive than $ZnO/\alpha-CuPc/SY.$ Electrophotographic sensitivity of $ZnO/\beta-CuPc/SY$ was $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ at 630 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.106-112
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• 2007

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

• Macromolecular Research
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• v.12 no.1
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• pp.32-37
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• 2004

The atom transfer radical polymerization (ATRP) of hexadecyl acrylate (HDA) was carried out in Ν,Ν-dimethylformamide (DMF) in the presence of CuSCN/Ν,Ν,Ν′,Ν"Ν"-pentamethyldiethylenetriamine (PMDETA). The results indicate that the polymerization is well-controlled: a linear increase of molecular weights occurs with respect to conversion and the polydispersities are relatively low. In particular, the use of CuSCN as the catalyst resulted in faster polymerization rates for hexadecyl acrylate than did those using either CuBr or CuCl; the polydis-persity, however, was larger than those obtained in the cases when CuBr and CuCl were used. In addition, we report the thermodynamic data and activation parameters for the solution ATRP of hexadecyl acrylate.

• Journal of Korea Foundry Society
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• v.13 no.2
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• pp.168-174
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• 1993

It has been known that the grain refinement of Cu base alloys greatly improved mechanical properties, castability, workability and hot shortness resistance etc. In this study CuZr50, CuP7, CuFe7, CuMg10 binary alloys were added as grain refiners in CuZn36 alloy. The alloys melted in vacuum and controlled in mixed gas conditions and casted at $1050^{\circ}C$. Zr-P-X compound has significantly grain refined but oxygen has been found detrimental to grain refinement. In the case of Zr /B ratio below 4, B acted as grain growth element in this alloy.

• Journal of the Korean Chemical Society
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• v.30 no.5
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• pp.415-422
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• 1986

The metal-support interaction of copper oxide supported on ${\gamma}$-alumina and silica was studied by X-ray diffraction (XRD) and temperature-programmed reduction(TPR). It was found that XRD pattern of CuO can not be observed up to 5.0wt % copper content for CuO/${\gamma}-Al_2O_3$ while CuO/$SiO_2$ sample shows the CuO pattern even at 2.5wt% copper content. $H_2-$TPR of CuO/${\gamma}-Al_2O_3$ system shows four major peaks at 145${\circ}C$, 185${\circ}C$, 210${\circ}C$, and 250${\circ}C$. In the case of CuO/$SiO_2$, a large peak at 250${\circ}C$ was appeared accompanying a small peak at 425${\circ}C$. Comparing the TPR peaks with that of copper aluminate which was prepared from the calcination of CuO/${\gamma}-Al_2O_3$ at 1000${\circ}C$, the peaks at around 145${\circ}C$, 200${\circ}C$ (185${\circ}C$ and 210${\circ}C$), and 250${\circ}C$ were corresponded to $Cu^+$ ion in CuO interacting ${\gamma}-Al_2O_3$, $Cu^+$ ions in defect sites of ${\gamma}-Al_2O_3$ and $Cu^{2+}$ ion in the bulk CuO layer, respectively. From the results, it was concluded that there is considerable metal-support interaction in CuO on ${\gamma}-Al_2O_3$ and the interaction results in a stabilization of $Cu^+$ ion in the system.

• Molecules and Cells
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• v.21 no.1
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• pp.161-165
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• 2006

Dichlorodihydrofluorescein ($DCFH_2$) is a widely used probe for intracellular $H_2O_2$. However, $H_2O_2$ can oxidize $DCFH_2$ only in the presence of a catalyst, whose identity in cells has not been clearly defined. We compared the peroxidase activity of Cu,Zn-superoxide dismutase (CuZnSOD), cytochrome c, horseradish peroxidase (HRP), $Cu^{2+}$, and $Fe^{3+}$ under various conditions to identify an intracellular catalyst. Enormous increase by bicarbonate in the rate of $DCFH_2$ oxidation distinguished CuZnSOD from cytochrome c and HRP. Cyanide inhibited the reaction catalyzed by CuZnSOD but accelerated that by $Cu^{2+}$ and $Fe^{3+}$. Oxidation of $DCFH_2$ by $H_2O_2$ in the presence of a cell lysate was also enhanced by bicarbonate and inhibited by cyanide. Confocal microscopy of $H_2O_2$-treated cells showed enhanced DCF fluorescence in the presence of bicarbonate and attenuated fluorescence for the cells pre-incubated with KCN. Moreover, DCF fluorescence was intensified in CuZnSOD-transfected HaCaT and RAW 264.7 cells. We propose that CuZnSOD is a potential intracellular catalyst for the $H_2O_2$-dependent oxidation of $DCFH_2$.