• Current Photovoltaic Research
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• 제3권1호
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• pp.27-31
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• 2015

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.73-73
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• 2000

Shear strength of BGA solder joints on Cu pad was studied for Cu-contained Sn n.5 a and 2.5wt.% Cu) and Sn-Pb (o.5wt.% Cu) solders, with emphasis on the roles of the C Cu-Sn intermetallic layer thickness and the roughness of the interface between the i intermetallic layer and solder. The shear strength test was performed both for a as-soldered s이der joints with soldering reaction times of 1, 2, 4 min and for aged s이der j joints at 170 C up to 16 days. The Cu addition to both pure Sn and eutectic Sn-Pb s solders increased the intermetallic layer thickness at both soldering and aging t temperatures. The Cu addition also resulted in changes in the roughness of the interface b between the intermetallic layer and solder at as-soldered states. With increasing Cu c content. the interface roughened for Sn-Cu solders whereas it flattened for Sn-Pb-Cu s solders. The shear fractures in all solder joints investigated were confined in the bulk s solder rather than through the intermetallic layer. Therefore, the effect of Cu content in s solders on the shear strength of the solder joints was primarily attributed to its i influence on the micros$\sigma$ucture of bulk solder, such as the size and spatial distributions of CU6Sn5 precipitates. In addition, the critical intermetallic layer thickness for a m maximum shear strength seemed to depend on the Cu content in bulk solder.older.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제29권7호
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• pp.414-423
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• 2016

In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

• Journal of Sensor Science and Technology
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• 제3권1호
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• pp.78-82
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• 1994

Single-phase $CuInS_{2}$ thin film were prepared by E-beam deposition and the effects of its annealing were investigated. The S/In/Cu was stacked from S, In and Cu by EBE method and then, In the nitrogen atmosphere, the stacked layer were annealed to convert chalcopyrite $CuInS_{2}$ thin films. and that result we obtained p-type Chalcopyrite $CuInS_{2}$ thin films, Its resistivity was $0.03{\sim}0.007{\Omega}cm$, Hall mobility was $0.07{\sim}0.1cm^{2}V^{-1}S^{-1}$ and Hall concentration was $10^{20-21}cm^{-3}$, respectively.

• Korean Journal of Materials Research
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• 제14권1호
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Korean Journal of Materials Research
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• 제9권2호
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• Proceedings of the Korea Society of Poultry Science Conference
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• 한국가금학회 2001년도 제18차 정기총회 및 학술발표 PROCEEDINGS
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• pp.66-68
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• 2001

An experiment was conducted investigate the of supplemental Cu and Zn methionine chelates on the performance, nutrient digestibility, serum IgG level, gizzard erosion, and Cu and Zn contents in the liver and excretion of broiler chickens. One thousand hatched broiler chickens (Ross) of one day old were assigned to 4 treatments:control(T1), 100ppm of copper in the from of Cu-methionine chelate(Cu-Met, T2), 100ppm of zinc in the from of Zn-methionine chelate(Zn-Met, T3) and 100ppm of copper plus 100ppm of zinc in the from of methionine chelate(Cu-Zn-Met, T4). Each treatment had four replications of 50 bird each. Weight gain of chicks fed chelated products were significantly higher than that of chicks fed control(P＜0.05).Combination of Cu and Zn chelates(Cu-Zn-Met) tended to show the best growth rate and feed conversion ratio. Nutrient digestibilities were not affected by dietary treatments. Serum IgG level of chicks fed Cu-Zn-Met was significantly higher than that of chicks fed control(P＜0.05). Gizzard erosion index was not significantly different among treatments. Contents of Cu and Zn in liver were not significantly affected by dietary treatments, whereas excretions of these minerals were significantly affected by dietary treatments.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제66권11호
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• pp.1600-1604
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• 2017

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile and many other applications due to their excellent physical and electronic properties. Especially, Mo-Cu composites with 5~20 wt% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength and prominent electrical and thermal conductivity. In most of the applications, high dense Mo-Cu materials with homogeneous microstructure are required for high performance, which has led in turn to attempts to prepare ultra-fine and well-dispersed Mo-Cu powders in different ways, such as spray drying and reduction process, electroless plating technique, mechanical alloying process and gelatification-reduction process. However, most of these methods were accomplished at high temperature (typically degree), resulting in undesirable growth of large Cu phases; furthermore, these methods usually require complicated experimental facilities and procedure. In this study, Mo-Cu alloying were prepared by planetary ball milling (PBM) and spark plasma sintering (SPS) and the effect of Cu with contents of 5~20 wt% on the microstructure and properties of Mo-Cu alloy has been investigated.

• Journal of the Korean Ceramic Society
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• 제50권6호
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• pp.518-522
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• 2013

This study investigatesthe coloration mechanism by identifying the factor that affects thered coloration of copper red glazesin traditional Korean ceramics. The characteristics of the reduction-fired copper red glaze's sections are analyzed using an optical microscope, Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The sections observed using an optical microscope are divided into domains of surface, red-bubble, and red band. According to the Raman micro spectroscopy analysis results, the major characteristic peak is identified as silicate in all three domains, and the intensity of $Cu_2O$ increases toward the red band. In addition, it is confirmed that the most abundant CuO exists in the glaze bubbles. Moreover, CuO and $Cu_2O$ exist as fine particles in a dispersed state in the surface domain. Thus, Cu combined with oxygen is distributed evenly throughout the copper red glaze, and $Cu_2O$ is more concentrated toward the interface between body and glaze. It is also confirmed that CuO is concentrated around the bubbles. Therefore, it is concluded that the red coloration of the copper red glaze is revealed not only through metallic Cu but also through $Cu_2O$ and CuO.

• BMB Reports
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• 제40권5호
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• pp.684-689
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• 2007

The endogenous neurotoxin, 1-methyl-6,7-dihydroxy-1,2,3,4-tetrahydroisoquinoline (salsolinol), has been considered a potential causative factor for the pathogenesis of Parkinson's disease (PD). In the present study, we examined the pattern of human Cu,Zn-superoxide dismutase (SOD) modification elicited by salsolinol. When Cu,Zn-SOD was incubated with salsolinol, some protein fragmentation and some higher molecular weight aggregates were occurred. Salsolinol led to inactivation of Cu,Zn-SOD in a concentration-dependent manner. Free radical scavengers and catalase inhibited the salsolinol-mediated Cu,Zn-SOD modificaiton. Exposure of Cu,Zn-SOD to salsolinol led also to the generation of protein carbonyl compounds. The deoxyribose assay showed that hydroxyl radicals were generated during the oxidation of salsolinol in the presence of Cu,Zn-SOD. Therefore, the results indicate that free radical may play a role in the modification and inactivation of Cu,Zn-SOD by salsolinol.