• 미생물학회지
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• 제32권4호
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• pp.258-263
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• 1994

보리수나무(Elaeagnus umbellata) 뿌리혹엣 분리한 공생균주인 Frankia 균주 EuIK1 게놈에 대해 K. pneumoniae의 nifH,D를 탐침으로 Southern hybridization을 수행한 결과, 3.2 Kb와 5.5 Kb BamHI 절편과 15 Kb PstI 절편이 강한 혼성화 반응을 보여 이들 절편에 nifH,D 유전자가 존재함을 확인하였다. 동일 탐침을 사용한 colony hybridization을 통해 pWE15 cosmid vector 에 작성되 게놈 library로부터 하나의 nif-클론 (pEuNIF)을 선별하였다. 이 클론을 BamHI으로 절단한 후 동일한 탐침으로 혼성화 반응을 수행한 결과, 3.2 Kb와 5.5 Kb가 강한 혼성화 반응을 보였으며, 이 결과는 게놈 혼성화 반응 결과와 일치하였다. 그러나 Frankia FaC1의 nifH 만을 탐침으로 이용한 결과 3.2Kb BamHI 절편만이 혼성화 반응을 나타내었다. 또한 3.2 Kb의 3‘ 말단과 5.5 Kb의 5’ 말단의 염기서열로부터 추론한 아미노산 서열을 ArI3의 nifD와 비교한 결과 182번부터 240번까지, 241번부터 282번까지의 아미노산 서열과 각각 매우 높은 유사성을 보였다. 이러한 결과로부터 3.2Kb 절편에는 nifH와 일부의 nifD 서열이 존재하고, 이 절편에 연속된 5.5Kb 절편에는 나머지 nifD서열이 존재함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.105-105
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• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국재료학회지
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• 제4권1호
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• pp.9-23
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• 1994

Multitarget bias cosputter deposition(MBCD)에 의해 저온($200^{\circ}C$)에서 NaCI(100)상에 정합$CoSi_2$를 성장시켰다. X-선회절과 투과전자현미경에 의해 증착온도와 기판 bias전압에 따른 각각 silicide의 상전이와 결정성을 관찰하였다. Metal induced crystallization(MIC) 과 self bias 효과에 의해 $200^{\circ}C$에서 기판전압을 인가하지 않은 경우에도 결정질 Si이 성장하였다. MIC현상을 이론 및 실험적으로 고찰하였다. 관찰된 상전이는 $Co_2Si \to CoSi \to Cosi_2$로서 유효생성열법칙에 의해 예측된 상전이와 일치하였다. 기판 bias전압 인가시 발생한 이온충돌에 의한 충돌연쇄혼합(collisional cascade mixing), 성장박막 표면의 in situ cleaning, 핵생성처(nucleation site)이 증가로 인하여 상전이, CoSi(111)우선방위, 결정성은 증착온도에 비해 기판bias전압에 더 큰 영향을 받았다. $200^{\circ}C$에서 기판 bias전압을 증가시킴에 따라 이온충돌에 의한 결정입성장이 관찰되었으며, 이를 이온충독파괴(ion bombardment dissociation)모델에 의해 해석하였다. $200^{\circ}C$에서의 기판 bias전압증가에 따른 결정성변화를 정량적으로 고찰하기 위해 Langmuir탐침을 이용하여 $E_{Ar},\; \alpha(V_s)$를 계산하였다.

• Bulletin of the Korean Chemical Society
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• 제35권7호
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• pp.2143-2147
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• 2014

Ketene-forming elimination from 2-X-4-nitrophenyl furylacetates (1a-d) promoted by $R_2NH-R_2NH_2{^+}$ in 70 mol % MeCN(aq) has been studied kinetically. When X = Cl and $NO_2$, the reactions exhibited second-order kinetics as well as Br$\ddot{o}$nsted ${\beta}$ = 0.37-0.54 and $|{\beta}_{lg}|$ = 0.31-0.45. The Br$\ddot{o}$nsted ${\beta}$ decreased with a poorer leaving group and $|{\beta}_{lg}|$ increased with a weaker base. The results are consistent with an E2 mechanism. When the leaving group was changed to a poorer one [X= H (1a) and $OCH_3$ (1b)], the reaction mechanism changed to the competing E2 and E1cb mechanisms. A further change to the E1cb mechanism was realized for the reaction of 1a with $i-Pr_2NH/i-Pr_2NH_2{^+}$ in 70 mol % MeCN-30 mol % $D_2O$. By comparing the kinetic results in this study with the existing data for $ArCH_2C(O)OC_6H_3-2-X-4-NO_2$, the effect of the ${\beta}$-aryl group on the ketene-forming elimination was assessed.

• 한국산학기술학회논문지
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• 제9권1호
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• pp.47-52
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• 2008

소자가 점점 고집적화 됨에 따라, MOS 소자 제조에 있어서 $SiO_2$의 두께가 ${\sim}1nm$로 낮아질 경우 발생하는 터널링전류와 문틱전압 천이를 방지할 수 있는 새로운 게이트용 유전물질을 개발하여 소자의 크기를 줄이는데 주력하고 있다. 본 실험에서는 원자층증착(ALD: atomic layer deposition) 방법으로 증착된 $ZrO_2$ 박막의 물리적, 전기적 특성에 대하여 연구하였다. ALD $ZrO_2$ 박막을 증착한 후 Ar 가스 분위기에서 $800^{\circ}C$, 1 시간동안 열처리한 다음 XRD, TEM, 그리고 C-V plots을 이용하여 $Pt/ZrO_2/Si$ 소자의 형태, 결정화 동역학, 그리고 경계층 특성을 평가한 결과 열처리에 의해 소자의 특성이 크게 향상됨을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• 대한기계학회논문집B
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• 제23권11호
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• pp.1379-1389
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• 1999

A new technique for control of size and shape of flame-made particles is Introduced. The characteristic sintering time can be controlled Independently of collision time by heating the particles with irradiation of laser because the sintering time strongly depends on temperature. A coflow oxy-hydrogen diffusion flame burner was used for $SiCl_4$ conversion to silica particle. Nanometer sized aggregates irradiated by a high power CW $CO_2$ laser beam were rapidly heated up to high temperatures and then were sintered to approach volume-equivalent spheres. The sphere collides much slower than the aggregate, which results in reduction of sizes of particles maintaining spherical shape. Light scattering of Ar ion laser and TEM observation using a local sampling device were used to confirm the above effects. When the $CO_2$ laser was irradiated at low position from the burner surface, particle generation due to gas absorption of laser beam occurred and thus scattering intensity increased with $CO_2$ laser power. At high irradiation position, scattering intensity decreased with $CO_2$ laser power and TEM image showed a clear mark of evaporation and recondensation of particles for high $CO_2$ laser power. When the laser was irradiated between the above two positions where small aggregates exist, average size of spherical particles obviously decreased to 58% of those without $CO_2$ laser irradiation with the spherical shape. Even for increased carrier gas flow rate by a factor of three, TEM photograph also revealed considerable reduction of particle size.

• 한국재료학회지
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• 제18권4호
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• pp.187-192
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• 2008

Multi-walled carbon nanotube (MWNT)/$SnO_2$ nano-composite (MSC) for the anode electrode of a Li-ion battery was prepared using a homogeneous precipitation method with $SnCl_2$ precursors in the presence of MWNT. XRD results indicate that when annealed in Ar at $400^{\circ}C$, $Sn_6O_4(OH)_4$ was fully converted to $SnO_2$ phases. TEM observations showed that most of the $SnO_2$ nanoparticles were deposited directly on the outside surface of the MWNT. The electrochemical performance of the MSC electrode showed higher specific capacities than a MWNT and better cycleability than a nano-$SnO_2$ electrode. The electrochemical performance of the MSC electrode improved because the MWNT in the MSC electrode absorbed the mechanical stress induced from a volume change during alloying and de-alloying reactions with lithium, leading to an increase in the electrical conductivity of the composite material.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 한국자기학회지
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• 제24권6호
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• pp.186-190
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• 2014

뫼스바우어 선원 $^{57}Co/Cu$의 제조조건을 도출하기 위하여, 금속 분말 코발트(Co)를 황산에 용해시킨 후 $H_3BO_3$, KOH와 NaCl을 첨가하여 Sulfamate 도금용액을 제조 후 Cu plate 기판에 도금하였다. 도금두께는 $4{\mu}m$로 일정하게 유지하였다. 전류밀도를 $2mA/cm^2$와 $30mA/cm^2$로 유지하면서 pH에 변화를 준 결과 pH가 4 이상으로 증가하면 hcp 결정의 Co 금속 이외의 2차상이 생성되었다. pH가 증가할수록 Co 후막 표면이 거칠어 졌으며 균열된 표면형상을 관찰하였다. pH가 5까지 증가할 경우 평균입도는 54 nmfh 증가함을 확인하였다. 열처리조건을 변화시키면서 Co가 Cu기지 내에 구속되는 온도가 $900^{\circ}C$에서 2 h임을 확인하였다. 열처리는 진공 후 Ar 분위기(1.5 l/min)를 유지하면서 수행하였다.