• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.166-169
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• 2010

In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.314-320
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• 1999

Several bisphosphine- and bisphosphite-substituted Re-imido complexes have been prepared from Re(NPh)(PPh3)2Cl3, 1, and Re(N-C6H3-i-Pr2)2Cl3(py), 4. Compound 1 reacted with trimethyl phosphate (P(OMe)3) to give a mixture of two isomers,mer,trans-Re(NPh)(P(OMe)3)2Cl3, 2, and fac,cis-Re(NPh)(P(OMe)3)2Cl3, 2a. In this reaction, the mer,trans-isomer is a major product. Complex 1 also reacted with triethylphosphine (PEt3) to exclusively give mertrans-Re(NPh)(PEt3)2Cl3, 3. Compound 4 reacted with trimethylphosphine (PMe3) to give mer,trans-Re(N-C6H3-i-Pr2)(PMe3)2Cl3, 5, which was converted to mer-Re(N-C6H3-i-Pr2)(PMe)(OPMe3)Cl3, 6, on exposure to air. Crystallographic data for 2: monoclinic space group P21/n, a = 8.870(2) Å, b = 14.393(3) Å, c = 17.114(4) Å, β = 101.43(2)°, Z = 4, R(wR2) = 0.0521(0.1293). Crystallographic data for 5: orthorhombic space group P212121, a = 11.307(l) Å, b = 11.802(l) Å, c = 19.193(2) Å, Z = 4, R(wR2) = 0.0250(0.0593). Crystallographic data for 6: orthorhombic space group P212121, a = 14.036(4) Å, b = 16.486(5) Å, c = 11.397(3) Å, Z = 4, R(wR2) = 0.0261(0.0630).

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.746-752
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• 2015

This study investigates the effects of aspect ratio (transport length-to-width) on diffusive-convection for physical vapor transport processes of $Hg_2Cl_2-NO$ system. For a system with the temperature difference of 20 K between an interface at the source material region and growing crystal interface, the linear temperature profiles at walls, the total molar fluxes at Ar = 2 are much greater than Ar = 5 as well as the corresponding nonuniformities in interfacial distributions due to the effect of convection. The maximum total molar flux at the gravitational acceleration of 1 $g_0$ is greater twice than at the level of 0.1 $g_0$, where g0 denotes the gravitational acceleration on earth. With increasing aspect ratio from 2 to 5, a diffusive-convection mode is transited into the diffusion mode, and then the strength of diffusion is predominant over the strength of diffusive-convection.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.126-126
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• 1999

본 실험의 목적은 FED의 상부, 하부 전극으로 사용되는 Mo를 건식, 습식 식각함으로써 DED 소자의 공정을 개발하는 것이다. Mo는 $261^{\circ}C$의 높은 융점을 지니고 있으며, 우수한 열적 안정성과 비교적 낮은 비저항을 가지는 재료로써 FED와 같은 전계 방출 소자의 cathod 팁 및 전극물질로 사용되어지는 가장 보편적인 물질이다. FED와 같은 전계방출소자가 갖추어야 할 요건은 전자 방출 영역이 소자 동작시 변형되지 않아야 하고, 기계적 ,화학적, 열적 내구성이 좋아야 함인데 이러한 요건을 충족시킬 수 있고 가장 범용적으로 사용되는 물질이 Mo이다. 실험에서 사용된 Mo는 DC magnetron sputter를 사용하여 Ar 가스를 첨가하여 5mTorr하에서 Si 기판위에 증착속도를 300$\AA$/min로 하여 1.6$\mu\textrm{m}$ 증착하였다. 본 실험의 Mo 식각은 고밀도 플라즈마원인 ICP를 이용하였다. 식각특성은 식각 가스조합, inductive power, bias voltage, 공정 압력의 다양한 공정 변수에 따른 식각특성 변화를 관찰하였다. 식각시 chlorine 가스를 주요 식각 가스로 사용하고 BCl3, O2, Ar을 첨가가스로 사용하였으며, inductive power는 300-600, bias voltage는 120-200V 사용하였고 압력은 15-30mTorr, 기판온도는 7$0^{\circ}C$로 유지하였으며 식각마스크로는 electron-beam evaporator로 1$\mu\textrm{m}$ 증착한 SiO2를 patterning하여 사용하였다. 식각속도는 stylus profiler를 이용하여 측정하였으며 식각후 profile은 scanning electron microscopy (SEM)을 통하여 관찰하였다. 실험 결과 순수한 Cl2 BCl3 가스만을 사용한 경우 보다는 Cl2 가스에 O2를 첨가하였을 때 좋은 선택비를 얻었다. 또한, inductive power와 bias voltage, Mo의 식각속도의 적절한 조절을 통해 SiO2에 대한 선택도를 변화시킬 수 있었다. Cl2:O2비를 1:1로 하고 400W/-150V, 20mTorr의 압력, 7$0^{\circ}C$ 기판온도에서 식각시 200$\AA$/min의 Mo 식각속도, SiO2와의 선택비 8:1을 얻을 수 있었다. 또한 실제 FED 소자 구조형성에 적용한 결과 비등방적인 식각형상을 형성할 수 있었다.

• Korean Journal of Optics and Photonics
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• v.5 no.3
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• pp.386-393
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• 1994

We have investigated output characteristics of XeCI excimer laser excited by transeverse electronbeam. We used e-beam output of 880 kV, 21 kA (70 ns, FWHM) and controlled current density of e-beam by pulsed magnetic coil (4.7 kG) which was fabricated around an e-beam diode (A-K gap is 21 mm) and laser chamber. We have obtained 35 J (4 atm) of e-beam deposition energy injected into laser media. The deposition energy was converted from an exposure area of Radcolor film and rising pressure of gas media which is measured by pressure jump method. The excited volume of $320cm^{3}$ was calculated. The maximum efficiency of 1.7% was obtained with the mixing ratio of HCllXe/Ar==0.2/ 6.3/93.5% and total pressure of 3 atm. Also laser output energy and specific energy were obtained 0.52 J and 1.7 J/I, respectively. For the analysis of experimental results we have developed computer simulation code. From the good agreements with the results of experiment and simulation we could theoretically explain the XeCI* formation channel. relaxation channel, and absorption channel of 308 nm.308 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.228-228
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.133-134
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.79.1-79
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• 1998