• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.790-793
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• 2000

We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$ single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1 ${\mu}{\textrm}{m}$. When BaTiO$_3$is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4 $\times$ 10$^4$ A/cm$^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

• The Journal of Natural Sciences
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• v.8 no.1
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• pp.61-69
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• 1995

It is hard to synthesize pure $BaTiO_3$ from $BaCO_3$ and $TiO_2$ in solid reaction for the activity of BaO and secondary phase. For this reason, the wet chemical techniques have been studied. Starting material which was used in these methods were expensive and the properties of powder which was synthesized in same defined. So, some process have been studying again to improve soild reaction method. This study which was one of those was to defin the forming mechanism of $Ba_2TiO_4$ and to control some condition of $Ba_2TiO_4$. The synthesis temperature of $BaTiO_3$ in solid reaction was near $1120^{\circ}C$. The quantity and forming temperature of $Ba_2TiO_4$ could be controlled by atmosphere heat treatment. $Ba_2TiO_4$ was related to expansion in Ba-rich region of $BaTiO_3$. $BaTiO_2O_5$ and $BaTiO_3O_7$ was reason to expand in Ti-rich region. The dielectrics of $CeAIO_3$ which was synthesized and sintered in reduction atmosphere and $BaTiO_3$ system were affected by $CeO_2$ which was formed for the decomposition of $CeAIO_3$ heat treatment in air.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.379-384
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• 2010

The usual ceramic process of mixing and milling in state of oxides $ZrO_2$ and $CeO_2$ was adopted in this study in a wet process to manufacture Ce-TZP. $CeO_2$-$ZrO_2$ ceramics containing 8~20 mol% $CeO_2$ were made by heat treatment at $1250\sim1500^{\circ}C$ for 5hr. The maximum dispersion point of every slurry manufactured with a mixture of $ZrO_2$ and $CeO_2$ was neat at pH10. A stable slurry with average particle size of 90 nm can be manufactured when it is dispersed with the use of ammonia water and polycarboxylic acid ammonium. The sintered Ce-TZP ceramics manufactured with the addition of $CeO_2$ in a concentration of less than 10 mol% progressed to the fracture of the specimen due to the existence of a monoclinic phase of more than 30% at room temperature. More than 99% of the tetragonal phase was created for the sintered body with the addition of $CeO_2$ beyond 18 mol%, but the degradation of the mechanical properties on the entire specimen was brought about due to the $CeO_2$ existing in a percentage above 3%. Consequently, the optimal Ce-TZP level combined in the oxide state was identified to be 16 mol% of $CeO_2$ contents.

• Progress in Superconductivity
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• v.8 no.1
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• pp.27-32
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• 2006

[$YBa_2Cu_3O_{7-x}$] thin films were deposited on various buffered-templates by a metal organic chemical vapor deposition(MOCVD). Three different templates of $CeO_2/YSZ/CeO_2/pure-Ni(CYC),\;CeO_2/YSZ/Y_2O_3/Ni-3at.%W(YYC)$ and $CeO_2/IBAD-YSZ$/stainless steel were used. The Ni and Ni-W alloy tapes were biaxially textured by cold rolling and annealing heat treatment. The dense YBCO films were grown on both the IBAD and YYC templates with no microcrack, while the YBCO films on the CYC templates were grown with the formation of microcracks and NiO. The YBCO film on the YYC template showed the higher $I_c$ than that on CYC template. Especially, the IBAD templates with a thin $CeO_2$(type I) and thick $CeO_2$(type II) top layer were used to compare the deposition nature of the YBCO on them. Comparing the current property of the YBCO films on IBAD templates, the YBCO film deposited on thick $CeO_2$ layer was better than the film on thin $CeO_2$ layer.

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.500-505
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• 2016

Scandia-stabilized zirconia co-doped with $CeO_2$ is a promising electrolyte for intermediate temperature SOFC, but still shows rapid degradation during a long-term operation. In this study, $CeO_2$ (1 mol%) as a stabilizer is partially substituted with lanthanum oxides ($M_2O_3$, M=Yb, Gd, Sm) to stabilize a cubic phase and thus durability in reducing atmosphere. 0.5M0.5Ce10ScSZ electrolytes were prepared by solid state reaction and sintered at $1450^{\circ}C$ for 10 h to produce dense ceramic specimens. With addition of the lanthanum oxide, 0.5M0.5Ce10ScSZ showed lower degradation rates than 1Ce10ScSZ. Since $Gd_2O_3$ showed the highest ionic conductivity among the co-dopants, an electrolyte-supported cell with 0.5Gd0.5Ce10ScSZ was prepared to compare its long-term performance with that of 1Ce10ScSZ-based cell. Maximum power density of 0.5Gd0.5Ce10ScSZ-based cell was degraded by about 2.3% after 250 h, which was much lower than 1Ce10ScSZ-based cell (4.2%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.430-433
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• 2001

The $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1300^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_{3}$ and ilmenite $MgTiO_{3}$ structures were coexisted in the $0.96MgTiO_{3}-0.04SrTiO_{3}+xCe(x=0{\sim}1.6wt%)$ ceramics. The dielectric constant$(\varepsilon_{r})$ was increased with addition of Ce. The temperature coefficient of resonant frequency$(\Gamma_{f})$ was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the $0.96MgTiO_{3}-0.04SrTiO_{3}+0.2Ce$ ceramics was near zero, where the dielectric constant, quality factor, and $\Gamma_{f}$ were 20.68, 50,272 and ${-0.5ppm/^{\circ}C}$, respectively.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.703-714
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• 1994

Sintering and microstructure of Ce-TZP/Al2O3 composite with $\alpha$-Al2O3 matrix containing dispersed 5~50 vol% ZrO2 were discussed. Sintered density was increased with elevating forming pressure in range of 6~300 MPa and about >99.2% of theoretical density was obtained at 1$600^{\circ}C$ for 2h in case of 300 MPa of 6~300 MPa uniaxially cold-pressed compacts containing 20 vol% ZrO2. All kinds of different batch composition exhibited nearly the same shrinkage behaviour with end-point shrinkage between 20 and 24%, and had the maximum shrinkage rate (0.41~0.54%/min) around 140$0^{\circ}C$. Grain growth was occurred faster in $\alpha$-Al2O3 than in {{{{ gamma }}-Al2O3 starting matrix during sintering at 1$600^{\circ}C$. Bimodal pore size distribution of interaglomerate pores with size of 0.03~0.2 ${\mu}{\textrm}{m}$ and of interaglomerate pores with size of around 60 ${\mu}{\textrm}{m}$ was obtained in Ce-TZP/$\alpha$-Al2O3 composite sintered at 130$0^{\circ}C$. But unimodal pore size distribution with around 0.1 ${\mu}{\textrm}{m}$ was observed in Ce-TZP/{{{{ gamma }}-Al2O3 composite sintered at the same temperature. Microcracks were occurred due to the tlongrightarrowm transformation of ZrO2 on cooling process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.269-274
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• 2002

(Sm/Y)-Ba-Cu-O system high Tc composite superconductors with/without $CeO_2$ additive were directionally grown by zone-melting process, haying large temperature gradient, In air atmosphere. Cylindrical green rods of $({Sm/y})_{1.8}Ba_{2.4}Cu_{3.4}O_x$ [(Sm/Y)1.8] composite oxides by cold isostatic pressing(CIP) method using rubber mold were fabricated. The microstructure and superconducting properties were investigated by XRD, SEM, TEM and SQUID magnetometer. The size of nonsuperconducting $({Sm/y})_2BaCuO_5$ inclusions of the melt-textured (Sm/Y)1.8 sample with CeO$_2$ additive were remarkably reduced and uniformly distributed within the superconducting (Sm/Y)1.8 matrix. Both samples, with/without $CeO_2$ additive, showed an onset Tc $\geq$ 90 K and sharp superconducting transition. The critical current density Jc value of the $CeO_2$ addictive were $1{\times}10^5A/\textrm{cm}^2$ in 77 K, 0 Tesla.