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검색결과 210건 처리시간 0.034초

X-선 분말 회절법을 이용한 소결광 구성광물상의 정량분석 (Quantitative analysis of iron ore sinter by X-ray powder diffraction method)

  • 김덕남;김형순
    • 한국결정성장학회지
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    • 제10권3호
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    • pp.264-270
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    • 2000
  • 소결광을 구성하는 광물상(hematite, magnetite, calcium ferrite, slag)들을 X선 내부표준법을 이용하여 정량분석을 하였다. 분석에는 표준물질로 NaF와 SiO$_2$를 선택하여 교정곡선을 작성하여 내부표준법에 적용하였다. 소결광내에 존재하는 calcium ferrite는 순수 CF(CaO.$Fe_2$$O_3$에 X선 회절피크는 나타나지 않았으며, 순수 $CF_2(CaO.$2Fe_2$$O_3$)에 근접하였으나 CF2에 소량의 $Al_2$$O_3$$SiO_2$가 고용된 4원계($Fe_2$$O_3$-CaO-$AI_2$$O_3$-$SiO_2$)에 보다 더 근접한 것으로 나타났다. 합성소결광의 정량분석은 두 표준물질 모두 상대오차가 $\pm$5 wt% 내에서 일치하였다. 실제 소결광의 정량분석결과 hematite는 27~40 wt%, magnetite는 20~30 wt%, calcium ferrite 22~33 wt%, slag 10~20 wt% 범위에서 분포하였다.

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Cl-based 플라즈마에 의한 YMnO3 박막의 식각 damage에 관한 연구 (Study on Etching Damages of YMnO3 Thin Films by Cl-based Plasma)

  • 박재화;기경태;김동표;김창일;장의구
    • 한국전기전자재료학회논문지
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    • 제16권6호
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    • pp.449-453
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    • 2003
  • Ferroelectric YMnO$_3$ thin films were etched with Ar/Cl$_2$ and CF$_4$/Cl$_2$ inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Ar/Cl$_2$ gas mixing ratio of 2/8, a RF power of 800 W, a DE bias of 200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 30 $^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium etched by chemical reactions with Cl radicals assisted by Ar ion bombardments in Ar/Cl$_2$ plasma. In CF$_4$/Cl$_2$ plasma, yttrium are remained on the etched surface of YMnO$_3$ and formed of nonvolatile YF$_{x}$ compounds manganese etched effectively by chemical reactions with Cl and F radicals. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower value than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of YMnO$_3$ thin film is more easily damaged by the Ar ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.s.

3-DESIGNS DERIVED FROM PLANE ALGEBRAIC CURVES

  • Yu, Ho-Seog
    • 대한수학회보
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    • 제44권4호
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    • pp.817-823
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    • 2007
  • In this paper, we develop a simple method for computing the stabilizer subgroup of a subgroup of $$D(g)={{\alpha}{\in}\mathbb{F}_q|there\;is\;a\;{\beta}{\in}{\mathbb{F}}^x_q\;such\;that\;{\beta}^n=g(\alpha)}$$ in $PSL_2(\mathbb{F}_q)$, where q is a large odd prime power, n is a positive integer dividing q-1, and $g(x){\in}\mathbb{F}_q[x]$. As an application, we construct new infinite families of 3-designs (cf. Examples 3.4 and 3.5).

$Ar/CF_{4}$ 유도결합 플라즈마로 식각된 $(Ba_{0.6}Sr_{0.4})TiO_{3}$ 박막의 특성분석 (The etching characteristics of $(Ba_{0.6}Sr_{0.4})TiO_{3}$ film Using $Ar/CF_{4}$ Inductively Coupled Plasma)

  • 강필승;김경태;김동표;김창일;이수재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.16-19
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    • 2002
  • (Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

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Etching Characteristics of Au Thin Films using Inductively Coupled CF4 / Cl2 / Ar Plasma

  • Kim Dong-Pyo;Kim Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제4권3호
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    • pp.1-4
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    • 2003
  • The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

Ar/CF4 유도결합 플라즈마를 이용한 (Ba0.6Sr0.4)TiO3 박막의 식각 특성 (The Etching Characteristics of (Ba0.6Sr0.4)TiO3 films Using Ar/CF4 Inductively Coupled Plasma)

  • 강필승;김경태;김동표;김창일;이수재
    • 한국전기전자재료학회논문지
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    • 제15권11호
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    • pp.933-938
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    • 2002
  • (Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$+Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

Ar/CF4 유도결합 플라즈마에서 식각된 (Ba0.6Sr0.4)TiO3 박막의 손상 감소 (Study on Damage Reduction of (Ba0.6Sr0.4)TiO3 Thin Films in Ar/CF4 Plasma)

  • 강필승;김경태;김동표;김창일
    • 한국전기전자재료학회논문지
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    • 제16권6호
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    • pp.460-464
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    • 2003
  • The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

The Dry Etching Characteristics of TiO2 Thin Films in N2/CF4/Ar Plasma

  • Choi, Kyung-Rok;Woo, Jong-Chang;Joo, Young-Hee;Chun, Yoon-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제15권1호
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    • pp.32-36
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    • 2014
  • In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

THE INVARIANCE PRINCIPLE FOR LINEARLY POSITIVE QUADRANT DEPENDENT SEQUENCES

  • Kim, Tae-Sung;Han, Kwang-Hee
    • 대한수학회논문집
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    • 제9권4호
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    • pp.951-959
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    • 1994
  • A sequence ${X_j : j \geq 1}$ of random variables is said to be pairwise positive quadrant dependent (pairwise PQD) if for any real $r-i,r_j$ and $i \neq j$ $$ P{X_i > r_i,X_j > r_j} \geq P{X_i > r_i}P{X_j > r_j} $$ (see [8]) and a sequence ${X_j : j \geq 1}$ of random variables is said to be associated if for any finite collection ${X_{i(1)},...,X_{j(n)}}$ and any real coordinatewise nondecreasing functions f,g on $R^n$ $$ Cov(f(X_{i(1)},...,X_{j(n)}),g(X_{j(1)},...,X_{j(n)})) \geq 0, $$ whenever the covariance is defined (see [6]). Instead of association Cox and Grimmett's [4] original central limit theorem requires only that positively linear combination of random variables are PQD (cf. Theorem $A^*$).

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