• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.29-34
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/C1$_2$ and CF$_4$/C1$_2$ Plasma. The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Cl$_2$/Ar gas mixing ratio of 8/2, an RF power of 800 W, a do bias of-200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium was not only etched by chemical reactions with Cl atoms, but also assisted by Ar ion bombardments in Ar/C1$_2$ plasma. In CF$_4$/C1$_2$ plasma, yttrium formed nonvolatile YF$_{x}$ compounds and remained on and the etched surface of YMnO$_3$. Manganese etched effectively by forming volatile MnCl$_{x}$ and MnF$_{y}$. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of the YMnO$_3$ thin film is more easily damaged by the Af ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.cts.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.551-556
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• 2001

In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

• 한국전기화학회:학술대회논문집
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• 2001.10a
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• pp.28-28
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• 2001

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3279-3282
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• 2010

The reaction rates of 4-X-2,6-dinitrochlorobenzenes (X = $NO_2$, CN, $CF_3$) with Y-substituted benzylamines (Y = p-$OCH_3$, p-$CH_3$, H, p-Cl) in MeOH-MeCN mixtures were measured by conductometry at $25^{\circ}C$. It was observed that the rate constant increased in the order of X = $NO_2$ > CN > $CF_3$ and in the order of Y = p-$OCH_3$ > p-$CH_3$ > H > p-Cl. When the solvent composition was varied, the rate constant increased in the order of 100% MeOH < 50% (v/v) MeOH-MeCN < 100% MeCN. These results may be ascribed to the formation of hydrogen bonds between the alcoholic hydrogen and nitrogen of benzylamines in groud state (GS). We conclude that the reaction takes place via $S_NAr$ base on the transition state parameters ${\rho}x$, ${\rho}Y$, $\beta_{nuc}$, and solvent effects.

• Journal of the Korea institute for structural maintenance and inspection
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• v.26 no.3
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• pp.72-83
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• 2022

This paper studied the effect on the microstructure, electrical properties, and compressive strength of cement mortar containing carbon fiber (CF) and steel fiber (SF), which are conductive materials. The resistivity of conductive fiber-reinforced cement mortar (FRCM) was measured using the 4-probe method, and the compressive strength was measured based on the compression test. Their performance was compared and reviewed with plain mortar (PM). Furthermore, the surface shape and composition of the fracture surface of the conductive FRCM were analyzed using a scanning electron microscope (SEM) and an energy disperse X-ray spectrometer (EDS). The results showed that the resistivity gradually increased as the curing time increased in all specimens, whereas the resistivity decreased significantly as the fiber volume fraction increased. Adding steel fibers up to 1.25% did not affect the resistivity of cement mortar considerably. On the contrast, the resistivity of carbon fiber was somewhat decreased even at low contents (ie, 0.1 to 0.3%), and thereafter, it was significantly decreased. The percolation threshold of the conductive CFRCM containing CF used in this experiment was 0.4%, and it is judged to be the optimum carbon fiber dosage to maximize the conductive effect while maintaining the compressive strength performance as much as possible. For the surface shape and composition analysis of conductive FRCM, the fracture surface was observed through SEM-EDS. These results are considered to be very useful in establishing the microstructure mechanism of reinforcing fibers in cement mortars.

• Bulletin of the Korean Chemical Society
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• v.17 no.5
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• pp.461-463
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• 1996

The laser-induced fluorescence excitation spectrum of 7-amino-4-(trifluoromethyl)coumarin in a supersonic jet has been recorded in the 340-352 nm region. The electronic band origin was observed at 28622.8 cm-1. Vibrational assignments for the three fundamental low-frequency modes and eight combination bands have been made for the S1 electronic excited state. The out-of-plane vibrations of this molecule have been characterized from the low-frequency assignments of the spectrum. The periodic potential energy function for the CF3 torsion, which satisfactorily fits the observed data, were also determined to be V(Φ)=95X(1-cos3Φ)-32X(1-cos6Φ) where Φ is the torsional angle. The relatively low torsional barrier of 99 cm-1 in S1 state could be explained by the small steric interactions between the functional groups attached to a bicyclic ring.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3274-3278
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• 2013

$CF_2Cl{\cdots}Cl$, an elusive photo-isomer of $CF_2Cl_2$, has been observed in matrix IR spectra from the precursors exposed to radiation from laser ablation of transition-metals. Other plausible products, $CFCl_2{\cdots}F$ and $FClC{\cdots}F-Cl$ are not detected due to their considerably higher energies. Parallel to its previously reported analogues, the C-X bonds are considerably stronger than those of the reactant, and particularly the Cl atom that is weakly bound to the residual Cl atom forms an unusually strong carbon-halogen bond. NBO analysis reveals that the C-Cl bond is a true double bond, and the weak $Cl{\cdots}Cl$ bond is largely ionic, $F_2C=Cl^{\delta+}{\cdots}Cl^{\delta-}$. IRC computation reproduces smooth inter-conversion between the reactant and product, and the transition state is energetically close to the product, consistent with its prompt disappearance in the early stage of photolysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.834-837
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• 2004

BST thin films were etched with inductively coupled $CF_4(C1_2+Ar)$ Plasmas. The maximum etch rate of the BST thin films was 53.6 nm/min for a 10 % $CF_4$ to the $Cl_2/Ar$ gas mixture at RF power of 700 W, DC bias of -150 V, and chamber pressure of 2 Pa. Small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. Consequently, the increased chemical effect caused the increase in the etch rate of the BST thin films. To clarify the etching mechanism, the surface reaction of the BST thin films was investigated by X-ray photoelectron spectroscopy.