• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.320-321
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indium-tin oxide (ITO) anodes using $CF_4g$ as and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $CF_4$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/$Alq_3$/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $CF_4$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The Impedance spectroscopy measurement of the devices with the $CF_4$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• 한국전기전자재료학회논문지
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• 제23권1호
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• pp.10-13
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• 2010

The plasma processing technologies of thin film deposition and surface treatment technique have been applied to many industrial fields. This study is purposed Large-area uniformity and surface treatment on the stainless substrate. We treat surface of stainless by $CF_4$ plasma. $CF_4$ plasma is generated by using SPM(Scanning plasma method)which is kind a of CVD. Generally, SPM has been used for uniform surface treatment using a crossed electromagnetic field. The optimum discharge condition has been studied for the gas pressure, the magnetic flux density and the distance between substrate and electrodes. In result, contact angle is increased by surface treatment using $CF_4$ Plasma. Therefore we expect that SPM to control contact angle is applied to many industries.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• 한국염색가공학회지
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• 제11권1호
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• pp.25-33
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• 1999

PET fabric was grafted with $CF_4$ or $C_2F_6$ plasmas generated by glow discharge. The water repellency of plasma-treated fabrics were evaluated with contact angle meter. The change in surface morphologies was observed by SEM, and the change of surface chemical characteristics were analyzed by FT-IR, ESCA and microchemical analysis technique. The results obtained are as follows : 1) The contact angle of plasma-treated fabric was over $150^\circ{C}$. 2) It was observed by SEM that the surface of treated substrate was over coated with thin film formed by the fluorocarbon plasma treatment. 3) According to ESCA analysis, there were prevailing -CHF-, $-CF_2$- and a little $-CF_3$ components on fluorocarbon plasma treated substrate. -CHF- and $-CF_2$- components were reduced by washing, and $-CF_2$- component was recovered by heat treatment. 4) In consideration of quantitative analysis of fluorine and F/C ratio by ESCA, we found that fluorination reached to the inner of substrate.

• 한국재료학회지
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• 제17권4호
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• pp.215-221
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• 2007

The effect of $CF_4$ plasma treatment condition on the interfacial adhesion energy of inkjet printed Ag/polyimide system is evaluated from $180^{\circ}$ peel test by calculating the plastic deformation energy of peeled metal films. Interfacial fracture energy between Ag and as-received polyimide was 5.5 g/mm. $CF_4$ plasma treatment on the polyimide surface enhanced the interfacial fracture energy up to 17.6 g/mm. This is caused by the increase in the surface roughness as well as the change in functional group of the polyimide film due to $CF_4$ plasma treatment on the polyimide surface. Therefore, both the mechanical interlocking effect and the chemical bonding effect are responsible for interfacial adhesion improvement in ink jet printed Ag/polyimide systems.

• Korean Chemical Engineering Research
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• 제40권6호
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• pp.719-724
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• 2002

Celgard 및 Durapore 막을 플라즈마로 처리하여 막의 소수성 및 아민용액에 대한 저항성을 조사하였다. 플라즈마 기체(또는 증기)로는 $CF_4$, Hexafluorobenzene(HFP), Pentafluoropyridine(PFP) 그리고 Hexamethyldisiloxane(HMDS)를 사용하였다. 플라즈마로 처리시킨 막의 표면구조는 FT-IR 스펙트럼을 이용하여 분석하였다. 플라즈마로 처리시킨 막의 물에 대한 접촉각은 플라즈마 기체의 종류에 따라 다른 특성을 나타내었다. Celgard와 Durapore 모두 HFB이나 PFP의 플라즈마로 처리하였을 경우에는 접촉각이 감소하였으나, $CF_4$ 또는 HMDS의 플라즈마로 처리하였을 경우에는 플라즈마로 처리하지 않은 경우보다 접촉각이 증가하였다. Monoethanolamine(MEA)용액에 대한 저항성은 Celgard의 경우에는 플라즈마로 처리하였을 경우가 순수한 Celgard보다 낮았으나, Durapore는 $CF_4$ 플라즈마로 처리하였을 경우 MEA에 대한 저항성이 증대되었다.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 한국염색가공학회지
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• 제4권2호
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• pp.76-83
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• 1992

Wool tropical and nylon taffeta were treated with low temperature plasma of $O_2$, $N_2$, NH$_3$, CF$_4$ and CH$_4$ for the intervals of 10 to 300 sec, and then dyed with leveling and milling type acid dyes in presence or absence of buffer solution. From the color depth of dyed fabrics, effect of plasma gases, treated time, dyeing time and temperature on dyeing property was studied. The results of the experiment can be summarized as follows: 1) The plasma treatments except methane gas increased the color depth of dyed wool fabrics, but not that of dyed nylon fabrics regardless of the plasma gases used. 2) The color depth of wool fabrics dyed in the dye bath without buffer solution was increased by the low temperature plasma, especially increased much more by CF$_4$ plasma treatment. It is found that with the identification of F- ion in the residual dye bath the hydrogen fluoride gas was adsorbed on wool fabrics in the plasma treatment. 3) The color depth of wool fabrics was increased with the time of $O_2$ and CF$_4$ plasma treatments. 4) In both cases of the leveling and milling type acid dyes, the rate of dyeing was increased in the low temperature plasma treatments, and it is found that the leveling type acid dye increased the color depth at relatively low temperature below 4$0^{\circ}C$, compared with the milling type acid dye.

• 한국표면공학회지
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• 제34권3호
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• pp.258-263
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• 2001

Siloxane thin films were fabricated on a silicon wafer by spin-coating using a siloxane solution made by the sol-gel process. Fluorine was doped using$ CF_4$ plasma treatment. The film was then annealed in-situ state in the nitrogen atmosphere. In order to examine the influence of annealing and fluorine doping on the siloxane thin film, thermogravimetric-differential thermal analysis (TG-DTA), Fourier transform-infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used and the dielectric constant was determined by the high-frequency capacitance-voltage method. Stable siloxane films could be obtained by in-situ annealing in a nitrogen atmosphere after $CF_4$ plasma treatment, and the dielectric value of the film was $\varepsilon$ 2.5.

• 한국의류학회지
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• 제25권1호
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• pp.154-161
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• 2001

We have treated polyester fabric with $CF_4,\;C_2F_6,\;SF_6\;and\;C_3F_6$ glow discharge plasmas to develop functional fabrics which preserve moisture transportation and water proofing nature. Modified properties were evaluated by water vapor permeation rate and breakthrough water pressure. The change of surface morphology was observed by SEM. Fiber interstice of the plasma treated fabric was calculated as $0.32{\mu}{\textrm}{m}$, and this value was sufficiently ideal as water repellent material. The moisture transportation of ${CF_4}-treated$ fabric was good as much as untreated fabric, and those of $C_2$F(sub)6-treated, SF(sub)6-treated fabrics were reduced by 1~3%, and that of ${C_3F_6}-treated$ fabric was reduced by 15%. The best treatment condition were 0.06 torr 120 seconds in $CF_4$, 0.05 torr 30 seconds in $SF_6$, 0.08~0.15 torr 90 seconds in $SF_6$ and 0.1 torr 45 seconds in $C_3F_6$ respectively. The grade of moisture transportation effect was $CF_4>C_2F_6>SF_6>>C_3F_6$, and water proofing effect was $C_2F_6{\approx}CF_4>C_3F_6>SF_6$. It was observed by SEM that the thin film was formed on the surface of the treated substrate by the fluorocarbon plasma treatment.