• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.7-11
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• 2022

Recently, Hanmi Gemological Institute & Laboratory (HGI) had an opportunity to examine 5 transparent synthetic moissanite. The round brilliants ranged from 0.93 to 0.96 ct and had a colorless, pink, yellow, blue, and red color. Advanced testing results, including Fourier-transform infrared (FTIR) and Raman spectroscopy, identified all the specimens as synthetic moissanite. Under the microscope, all samples except the colorless were confirmed to be a synthetic moissanite coated with a colored film. EDXRF chemical analysis detected very weak X-ray fluorescence peak characteristics of Ca, Ti, and Co in the colored samples. These features were not detected in the colorless sample. Raman spectroscopy investigation was unable to detect the 1332 cm^-1 (produced by sp³ bonding of carbon atoms) or the ~1550 cm^-1 (produced by graphite-related sp² bonding) peak in the colorless sample. The SEM image of the colorless sample showed no indication of a coating. The TEM image of the colorless sample revealed the presence of a 3~8 nm thick layer on the moissanite. Moreover, from the corresponding STEM Z-contrast image combined with the energy-dispersive X-ray spectroscopy (EDX) line profiles and EDX elemental maps, this layer was estimated to be carbon, silicon and oxygen.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.621-627
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• 1998

The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Economic and Environmental Geology
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• v.16 no.1
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• pp.19-36
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• 1983

The study revealed that the sequence of volcanism in Ulrung island can be classified into 5 stages, and the volcanic history is summerized as follow: 1st stage: Eruption of basaltic agglomerates, tuffs and lavas, 2nd stage: Eruption of trachytic and trachyandesitic agglomerates and tuffs, 3rd stage: Eruption of trachyte lavas and their lapilli tuffs, 4th stage: Eruption of trachyte lavas and nepheline phonolites, 5th stage: Eruption of pumice, trachytic ash and lapilli, and plutonic ejecta (fragments of alkali gabbro, monzonite and alkali feldspar syenite) and a subsequent caldera formation. Finally, a small scale eruption of leucite bearing trachyandesite lava in the caldera. Several evidences show that there have been long erosional intervals between the 1st and 2nd stages and between the 4th and 5th stages. A K-Ar age for trachybasalt lava of the 1st stage was determined to be 1.8 Ma, and a $C^{14}$ age, 9300Y. (Machida, 1981) is available for these volcanic events. Therefore, it is considered that volcanic activity of the island above sea level began at least in early Pleistocene, and continued to until 9300 years ago exploding large amount of pumice, prior to pouring out of leucite bearing trachyandesite from the inner caldera. Using solidification index (SI) of Kuno, microscopic texture and mineral composition as criteria of the classification, the volcanic rocks are classified into alkali basalt, trachybasalt, trachyandesite, trachyte and phonolite. These are mostly prophyritic in texture. Main constituent minerals of alkali basalt and trachybasalt are plagioclase, olivine, Ti-augite and magnetite. Principal minerals of trachyandesite are plagioclase, anorthoclase, clinopyroxenes, kaersutite, biotite and magnetite. Trachyte and phonolite consist mainly of anorthoclase, clinopyroxene and magnetite, showing typical trachytic texture in groundmass. In solidification index, alkali basalt ranges from 39 to 27, trachybasalt 17 to 14, trachyandesite 12 to 9 and trachyte 8.15 to 0.72. A trend of compositional variation showing a typical alkali volcanic rock series is revealed on $SiO_2$-oxides and SI-oxides diagrams. In $SiO_2$-total alkali diagram, alkali lime index and An-Ab'-Or diagram, the samples fall into the fields of potassic series of the alkali volcanic rock series, whereas in A-F-M diagram show a trend toward the alkali enrichment with a curve approaching toward the iron apex. In particular, trachybasalt lavas in this island have higher total iron contents which is comparable to alkali rocks in other areas, e. g. as Gough and Tristan volcanic islands located near the Mid-Oceanic ridge in South Atlantic Ocean.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.942-947
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• 2001

Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{\mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{\mu}m$ to $3.8{\mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{\mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{\mu}m$ to $3{\mu}m$ region, and the orientation of films became random above $3{\mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{\mu}m$.

• Progress in Superconductivity
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• v.12 no.2
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• pp.82-87
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• 2011

We studied the trapped field properties of bulk Y-Ba-Cu-O superconductors by applying 3 T of the permanent or $Nb_3Ti$ superconducting magnet. The 28 mm circular type of YBCO bulk superconductor was prepared and then hole at the center of bulk, parallel to the c-axis, was mechanically drilled. Typical size of hole in YBCO bulk was 10 mm in diameter. In order to examine the trapped field variation in terms of different impregnated materials, a hole in YBCO bulk was filled with resin and indium respectively. The trapped field decay due to flux flow was determined in terms of time. Our preliminary result indicates the trapped field value measured on the YBCO without hole after 30 minute by applying 3 T, was 6,500 G, which is much higher than that, 4,500 G, measured on YBCO with hole. Also, we confirmed that the tendency of a trapped field decrement with time was almost the same regardless of the impregnated materials in YBCO.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.165-170
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• 2015

Ceramics biomaterials are useful as implant materials in orthopedic surgery. In this study, porous HA(hydroxyapatite)/${\beta}$-TCP(tricalcium phosphate) composite biomaterials were successfully fabricated using HA/${\beta}$-TCP powders with 10-30 wt% $NH_4HCO_3$ as a space holder(SH) and $TiH_2$ as a foaming agent, and MgO powder as a binder. The HA/${\beta}$-TCP powders were consolidated by spark plasma sintering(SPS) process at $1000^{\circ}C$ under 20 MPa conditions. The effect of SH content on the pore size and distribution of the HA/${\beta}$-TCP composite was observed by scanning electron microscopy(SEM) and a microfocus X-ray computer tomography system(SMX-225CT). These microstructure observations revealed that the volume fraction of the pores increased with increasing SH content. The pore size of the HA/${\beta}$-TCP composites is about $400-500{\mu}m$. The relative density of the porous HA/${\beta}$-TCP composite increased with decreasing SH content. The porous HA/${\beta}$-TCP composite fabricated with 30%SH exhibited an elastic modulus similar to that of cortical bone; however, the compression strength of this composite is higher than that of cortical bone.

• Korean Journal of Heritage: History & Science
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• v.51 no.4
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• pp.108-119
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• 2018

"The Collection of Yi Chungmugong" manuscript is a hand-written manuscript of the volume 1 consisting of the Collection, published in 1795 and it seems to have completed the contents of the book by correcting the first part of the book before print. The book adopted a form of Seonjangbon(線裝本) of Ochimanjeongbeop(五針眼訂法) and was urgently needed some measures to preserve because it has been much damaged by stains, loss and oxidation due to moisture on the bottom of it. In addition, a scientific investigation was applied to find out the features of the quality of paper and fiber used for the book, which would be reflected in the process of the preservation. The characteristics of paper were measurmented for size(cm), thickness(mm), weight(g), basis weight($g/m^2$), density($g/cm^3$), chain line and laid lines($3{\times}3cm$). The measurement showed that the characteristics of paper used in royal books published in the late Joseon Dynasty. For the paper-fiber of the book, C stain was used and the technique revealed that the book is made of bast fibre of paper mulberry and its binding strings are cotton. SEM-EDS analysis was performed to verify the existence of additives in paper. As a result of the analysis, The crystallized calcium was detected in addition to the main components carbon(C) and oxygen(O). This artifact is the unique final version of "The collection of Yi Chungmugong", which has considerable value in terms of academic research, besides it helps to understand how to print books of Joseon Dynasty. And it also has a very accurate information of when and where the book was made, which primarily could be resources to conserve and restore for other book heritage.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.84-84
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• 2012

소자가 고집적화 됨에 따라, 비저항이 낮고 electro migration (EM), Stress Migration (SM) 특성이 우수한 구리(Cu)를 배선재료로서 사용하고 있다. 그러나, 구리는 Si과 $SiO_2$의 내부로 확산이 빠르게 일어나, Si 소자 내부에 deep donor level을 형성하고, 누설 전류를 증가시키는 등 소자의 성능을 저하시킬 수 있는 문제점을 가지고 있다. 그러나, electroplating 을 이용하여 증착한 Cu 박막은 일반적으로 확산 방지막으로 쓰이는 TiN, TaN, 등의 물질과의 접착 (adhesion) 특성이 나쁘다. 따라서, Cu CMP 에서 증착된 Cu 박막의 벗겨지거나(peeling), EM or SM 저항성 저하 등의 배선에서의 reliability 문제를 야기하게된다. 따라서 Cu 와 접착 특성이 좋은 새로운 확산방지막 또는 adhesion layer의 필요성이 대두되고 있다. 본 연구에서는 이러한 Cu 배선에서의 접착성 문제를 해결하고자 Metal organic chemical vapor deposition (MOCVD)을 이용하여 제조한 코발트(Co) 박막을 $Cu/TaN_x$ 사이의 접착력 개선을 위한 adhesion layer로 적용하려는 시도를 하였다. Co는 비저항이 낮고, Cu 와 adhesion이 좋으며, Cu direct electroplating 이 가능하다는 장점을 가지고 있다. 하지만, 수소 분위기에서 $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) 전구체에 의한 MOCVD Co 박막의 경우 탄소, 산소와 같은 불순물이 다량 함유되어 있어, 비저항, surface roughness 가 높아지게 된다. 따라서 구리 전착 초기에 구리의 핵 생성(nucleation)을 저해하고 핵 생성 후에도 응집(agglomeration)이 발생하여 연속적이고 얇은 구리막 형성을 방해한다. 이를 해결하기 위해, MOCVD Co 박막 증착 시 수소 반응 가스에 암모니아를 추가로 주입하여, 수소/암모니아의 분압을 1:1, 1:6, 1:10으로 변화시켜 $Co/TaN_x$ 박막의 특성을 비교 분석하였다. 각각의 수소/암모니아 분압에 따른 $Co/TaN_x$ 박막을 TEM (Transmission electron microscopy), XRD (X-ray diffraction), AES (Auger electron spectroscopy)를 통해 물성 및 조성을 분석하였고, AFM (Atomic force microscopy)를 이용하여, surface roughness를 측정하였다. 실험 결과, $Co/TaN_x$ 박막은 수소/암모니아 분압 1:6에서 90 ${\mu}{\Omega}-cm$의 낮은 비저항과 0.97 nm 의 낮은 surface roughness 를 가졌다. 뿐만 아니라, MOCVD 에 의해 증착된 Co 박막이4-6 % concentration 의 탄소 및 산소 함량을 가지는 것으로 나타났고, 24nm 크기의 trench 기판 위에 약 6nm의 $Co/TaN_x$ 박막이 매우 균일하게 형성된 것을 확인 할 수 있었다. 이러한 결과들은, 향후 $Co/TaN_x$ 박막이 Cu direct electroplating 공정이 가능한 diffusion barrier로서 성공적으로 사용될 수 있음을 보여준다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.205-205
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• 2013

테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.