• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.103-103
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• 2000

강한 결정 방향 의존성과 낮은 항정계를 갖는 Bi4Ti3O12 강유전체 박막은 NDRO형 비휘발성 강유전체 메모리 분야에서 매우 유망한 재료이다. 이를 위해서는 실리콘 기판과의 계면조절과 실리콘 기판성에서 고품질의 강유전성 박막을 성장시키는 기술이 필수적이다. MOCVD에 의한 Bi4Ti3O12 의 증착에서는 Bi 성분의 강한 휘발 특성과 낮은 반응성으로 인하여 조성과 두께 등의 조절이 매우 어렵다. 따라서 화학기상증착의 기구를 이해하고 제어하는 기술이 양질의 박막을 얻는데 필수적이다. 본 연구에서는 유기금속 원료 TPB, TIP 과 산소를 이용하여 실리콘 기판위에 Bi4Ti3O12 강유전체 박막을 증착할 때, 증착 변수의 변화에 따른 박막의 증착 거동과 구조적, 전기적 특성을 연계하여 분석하였다. 특히 기판부착력이 낮고 휘발성이 강한 Bi의 특성으로 인한 문제를 개선하기 위하여 TIP원료를 주기적으로 공급, 중단을 반복하는 펄스주입법을 고안하여 그 효과를 살펴보았다. 실리콘 기판위에서 TiO2의 증착속도는 실험온도 영역에서 온도에 따라 변화하지 않는 전형적인 물질 전달에 의해 지배되는 양상을 나타내었다. 반면 Bi2O3 경우에는 50$0^{\circ}C$ 이상에서 급격하게 증착속도가 감소하는 특이한 경향을 나타내었으며 이는 Bi2O3의 높은 휘발성 때문일 것이다. Bi4Ti3O12 박막은 온도증가에 따라 증착속도가 증가한 후 $600^{\circ}C$ 이상에서 포화되는 경향을 보였다. 이로부터 실리콘 기판위에서의 Bi4Ti3O12 박막의 증착 모델을 제시하였다. Bi2O3에 비해 상대적으로 표면 부착력이 월등히 큰 TiO2가 우선적으로 실리콘 펴면에 형성된 후 TPB 유기금속 원료가 이 TiO2와 반응하는 과정으로 Bi4Ti3O12 박막이 증착된다. $600^{\circ}C$이상에서는 증착 변수들을 바꾸어도 물성이 변하지 않는 자기조절기능이 있음을 알 수 있었는데 이는 고온에서의 Bi2O3의 강한 휘발성 때문일 것이다. 실리콘 기판에서 층상 페로브스카이트 상은 58$0^{\circ}C$ 이상에서 형성되며, 매우 좁은 온도 변화에도 결정구조, 박막현상 및 성분이 크게 바뀌는 온도에 민감한 증착거동이 관찰되었다. 증착 모델에서 예견되는 Bi의 불리함을 개선하기 위해 펄스주입법을 실시한 경우 Bi의 성분량이 증가되었고 결정성이 향상되었다. 이로부터 펄스주입법이 박막내에 부족하기 쉬운 Bi를 보충하여 박막의 특성을 개선함을 확인하였다. Bi4Ti3O12 박막의 증착온도에 따른 누설전류 특성 측정 결과 증착온도가 감소할수록 누설전류가 감소함을 알 수 있었고 펄스주입법이 연속주입법보다 더 낮은 누설전류를 보임을 알았다. 펄스주입법의 경우 -2.5V 인가 시의 누설전류는 7.4$\times$10-8A/cm2에서 1.3$\times$10+7A/cm2의 매우 우수한 값을 가졌다. 연속 주입법에 의해 증착된 박막은 C-V 측정 결과 강유전성 이력이 나타나지 않았으나, $600^{\circ}C$ 이상에서 펄스주입법에 의해 증착된 박박은 강유전성 이력을 나타내었다.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.83-89
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• 1998

The structure refinements and the electrical and magnetoelectric measurements were performed for BIT.1BF and BIT.2BT. The tetragonal distortion of the ab plane became lessened with the addition of $4BiFeO_3 into Bi_4Ti_3O_{12}$ significantly. However, the tilting of the outer-oxygen octahedra of the perovskite unit and the elongatin of the $(Bi_2O_2)^{2+}$ layers became more pronounced. For the both phases, the bariations of dielectric properties and electrical conductivities at high temperatures showed that the ferroelectic I-rerroelectric II phase transition existed before reaching the Curie temperature. The electrical conductivity became higher with the increase of $Fe^{3+}$ ions, implying that the electron transfer increased correspondingly. The magnetoelectric effect was observed linear up to ~8 kOe, which was stronger in BIT.1BF than BIT.2BF. This behavior indicates that the distortion of the ab plane may affect the induced polarization as well as magnetic moment.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.17-23
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• 2005

The electrochemical behaviors of polycrystalline silver electrodes in 8M KOH solutions containing $Bi_2O_3$ were studied under various conditions by cyclic voltammetry, potentiostatic and galvanostatic techniques as well as the morphology of the silver oxide structures by SEM. It was found that three new compounds comprising silver, bismuth, and oxygen as well as $Bi_2O_3$, $Ag_2O$ and AgO were formed during the electrochemical oxidation of silver. In addition, the potentiostatic current transients were characterized by the appearances of the first current peaks corresponding to the formation of silver oxides, and the second current peaks corresponding to the Ag-Bi-O compounds, indicating the presence of the nucleation and 3D growth mechanism, in the potential regions of $Ag_2O$ and AgO, respectively. Microscopic examinations showed that two types of silver (I) oxide morphologies are formed in the potential region of $Ag_2O$.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3368-3372
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• 2012

The $Bi_2O_3$ nanowires are highly sensitive to low concentrations of $NO_2$ in ambient air and are almost insensitive to most other common gases. However, it still remains a challenge to enhance their sensing performance and detection limit. This study examined the influence of the encapsulation of ${\beta}-Bi_2O_3$ nanorods with $In_2O_3$ on the $NO_2$ gas sensing properties. ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorods were fabricated by a two-step process comprising the thermal evaporation of $Bi_2O_3$ powders and sputter-deposition of $In_2O_3$. Multiple networked ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorod sensors showed the responses of 12-156% at 1-5 ppm $NO_2$ at $300^{\circ}C$. These response values were 1.3-2.7 times larger than those of bare ${\beta}-Bi_2O_3$ nanorod sensors at 1-5 ppm $NO_2$. The enhancement in the response of ${\beta}-Bi_2O_3$ nanorods to $NO_2$ gas by the encapsulation by $In_2O_3$ can be accounted for based on the space-charge model.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.147-147
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• 2013

Multiferroic material $BiFeO_3$ (BFO) is a typical multiferroic material with a room-temperature magnetoelectric coupling in view of high magnetic- and ferroelectric-ordering temperatures (Neel temperature $T_N$ ~ 647 K and Curie temperature TC ~1,103 K). Rare-earth ion substitution at the Bi sites is very interesting, which induces suppressed volatility of the Bi ion and improved ferroelectric properties. At the same time, the Fe-site substitution with magnetic ions is also attracting, since the enhanced ferromagnetism was reported. In this study, BFO, $Bi_{0.9}Dy_{0.1}FeO_3$ (BDFO), $BiFe_{0.97}Co_{0.03}O_3$ (BFCO) and $Bi_{0.9}Dy_{0.1}Fe_{0.97}Co_{0.03}O_3 $ (BDFCO) compounds were prepared by conventional solid-state reaction and wet-mixing method. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h. The samples were immediately put into an oven, which was heated up to 800oC and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies). Dy and Co co-doping at the Bi and the Fe sites induce the enhancement of both magnetic and ferroelectric properties of $BiFeO_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.246-250
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• 2003

The electromagnetic properties of Ni$\_$0.8/Zn$\_$0.2/Fe$_2$O$_4$ having stable characteristics in high frequency range were investigated as functions of Bi$_2$O$_3$, CaO contents. Power loss increased in proportion to the amount of Bi$_2$O$_3$ up to 0.3 wt％ and decreased over 0.3 wt％. Also, permeability increased with Bi$_2$O$_3$ contents. The lowest power loss and highest resonance frequency were obtained to the specimens added Bi$_2$O$_3$ of 0.7wt％ and CaO of 0.3 wt％ due to creation of resistivity layers in the grain boundaries originated by the solid solution of Bi$_2$O$_3$ and CaO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.550-553
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• 2001

$Li_{2}O-P_{2}O_{5}-Bi_{2}O_{3}-V_{2}O_{5}$ glass containing glass former, $P_{2}O_{5}$ and $Bi_{2}O_{3}$ was prepard by melting the glass batch in pt. erucible followed by guenching on the copper plate. We found that $Li_{2}O-P_{2}O_{5}-Bi_{2}O_{3}-V_{2}O_{5}$ glass-ceramics obtained from the crystallization of glass showed signifieantly higher capacity and longer cycle life tham $LiV_{3}O_{8}$ made from powder synthesis. In this paper, we described crystallization process and $LiV_{3}O_{8}$ crystal growth in glass matrix by increasing temperature. The electrochemical properties were strongly affected by $LiV_{3}O_{8}$ crystal growth in matrix

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.550-553
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• 2001

Li$_2$O-P$_2$O$_{5}$-Bi$_2$O$_3$-V$_2$O$_{5}$ glass containing glass former, P$_2$O$_{5}$ and Bi$_2$O$_3$ was prepard by melting the glass batch in pt. erucible followed by quenching on the copper plate. We found that Li$_2$O-P$_2$O$_{5}$-Bi$_2$O$_3$-V$_2$O$_{5}$ g1ass-ceramics obtained from the crystallization of glass showed significantly higher capacity and longer cycle life tham LiV$_3$O$_{8}$ made from powder synthesis. In this paper, we described crystallization process and LiV$_3$O$_{8}$ crystal growth in glass matrix by increasing temperature. The electrochemical properties were strongly affected by LiV$_3$O$_{8}$ crystal growth in matrix.rowth in matrix.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.85-92
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• 1994

Ferroelectric Bi4Ti3012 thin films have been grown on LaAlO(001) by Pulsed-laser deposition. Phase formation and structural films prepared of the films prepared at varigus deposition temperatures are investigated using x-ray diffraction The film grown at 740℃ shows epitaxial growth behavior with c-akis normal to the substrate. N2tBmstiucCures of Bi4Ti3012/YBa2Cu307-x/LaAIO3(001) have been in-situ grown. Even though the a-and b-axes of the Yba2Cu307-x layer show epitaxial growth behavior.