• 한국세라믹학회지
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• 제28권12호
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• pp.981-988
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• 1991

Various crystal defects such as voids, inclusions dislocations, stacking faults and precipitates were observed in the Czochralski-grown Bi12GeO20 crystals. Particularly, precipitates were found in the whole crystals. The phase of these precipitates was identified as Bi4Ge3O12 by EPMA and transmission electron microscopy. The precipitates were produced by pulling rapidly from a non-stoichiometric charge. During the pulling of Bi12GeO20 crystals, the melt composition of stoichiometric charge was changed Bi-deficent with gradual volatilization of Bi2O3. Precipition of the second phase may have been affected by an abrube thermal stress. By adding excess Bi2O3 into the stoichiometric batch, the precipitation of Bi4Ge3O12 was suppressed. At a pulling speed of 2 mm/hr, clear and precipitate from crystals of Bi12GeO20 were grown from the melt of the Bi2O3 excess charge.

• 공업화학
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• 제3권1호
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• pp.53-63
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• 1992

프로필렌을 선택산화시켜 아크로레인을 제조하는 반응을 Bi-molybdate 촉매상에서 고정층 반응기를 사용하여 연구하였다. ${\alpha}-Bi_2Mo_3O_{12}$위에 $MoO_3$를 담지시킨 M/BM-series 촉매는 함침법으로 제조되었고, 역으로 BM/M-series 촉매는 $MoO_3$위에 ${\alpha}-Bi_2Mo_3O_{12}$을 침전시켜 제조하였다. 또한 촉매의 특성분석을 위하여 질소흡착과 XRD, SEM을 이용하였다. M/BM-series 촉매에서는 $MoO_3$가 작은 입자로 분산되고 ${\alpha}-Bi_2Mo_3O_{12}$의 결정구조는 $MoO_3$상이 추가되어도 그 형상이 변하지 않는 채로 유지되었으나, BM/M-series 촉매의 표면형상 및 전체 구조는 촉매제조 중에 생기는 침전물인 $Bi(OH)_3$가 소성 도중 $MoO_3$와 반응하여 ${\alpha}-Bi_2Mo_3O_{12}$을 형성하는 관계로 그 조성에 따라 매우 불규칙적으로 변화하였다. 반응실험 결과, 두 종류의 촉매 모두에서 excess $MoO_3$가 포함되었을 때 활성이 크게 증가하였는데, 이는 선별산화반응이 주로 ${\alpha}-Bi_2Mo_3O_{12}$에서 일어나고 $MoO_3$는 ${\alpha}-Bi_2Mo_3O_{12}$에 산소 공급을 원활히 하여 활성을 증가시키기 때문으로 판명되었다. 또한 이러한 활성 증가는 ${\alpha}-Bi_2Mo_3O_{12}$와 기계적 혼합물 (mechanical mixture)에서도 관찰되었다.

• 한국세라믹학회지
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• 제26권4호
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• pp.479-486
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• 1989

According to the phase diagram, 6Bi2O3.GeO2 composition melts congruently at 93$0^{\circ}C$ and forms a stable ${\gamma}$-6Bi2O3.GeO2 crystal phase below the melting point. But when the melt of this composition was cooled at a rate 1-15$0^{\circ}C$/min without tapping by a glass rod or impurity addition, a metastable $\delta$-6Bi2O3.GeO2 crystal phase was formed. It is due to that as the nucleation energy barrier of $\delta$-6Bi2O3.GeO2 crystals, which have more open and defective structure, is lower than that of ${\gamma}$-6Bi2O3.GeO2 crystals. When impurities or ${\gamma}$-6Bi2O3.GeO2 crystals existed in the melt, stable ${\gamma}$-6Bi2O3.GeO2 crystal phase was formed at various cooling rate. It is because of that the impurities or the ${\gamma}$-6Bi2O3.GeO2 crystals role as a seed crystal and as a result the nucleation energy barrier of ${\gamma}$-6Bi2O3.GeO2 crystals is lowered.

• 한국세라믹학회지
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• 제35권11호
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• Bulletin of the Korean Chemical Society
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• 제31권7호
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• pp.1941-1944
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• 2010

The heterojunction structures of BiOCl/$Bi_3O_4Cl$, exhibiting considerable visible-light photocatalytic efficiency, were prepared by a simple wet-chemical process at ambient condition. The prepared nanocomposites were characterized by XRD, TEM, and UV-visible diffuse reflectance spectra. Under visible light (${\lambda}\geq$420 nm) irradiation, BiOCl/$Bi_3O_4Cl$ exhibited an enhanced photocatalytic activity in decomposing 2-propanol (IP) in gas phase and salicylic acid (SA) in aqueous solution, whereas the bare BiOCl and $Bi_3O_4Cl$ showed negligible activities. It is deduced that the remarkable visible-light photocatalytic activity of the BiOCl/$Bi_3O_4Cl$ originates from the hole $(h^+)$ transfer between VB of the $Bi_3O_4Cl$ and BiOCl semiconductors.

• 한국세라믹학회지
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• 제26권1호
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• pp.139-145
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• 1989

An eutectic melt in the system(Bi2O3)0.85·(Nb2O5)0.15-6Bi2O3·SiO2 was unidirectionally solidfield at a rate of 0.5mm/h under a thermal gradient of 100℃/cm. Double crucibles and seed crystal plate were used in order to botain the composite crystals which had uniform microstructure throughout the ingot. The obtained composite crystals showed uniform microstructure, in which needle-like δ-(Bi2O3)0.85·(Nb2O5)0.15 crystals were arrayed in parallel in a matrix of γ-6Bi2O3·SiO2 single crystal. It was found that the <110> direction of δ-(Bi2O3)0.85·(Nb2O5)0.15 crystal was essentially parallel to the <111> direction of γ-6Bi2O3·SiO2 crystal in the composite crystals. A transverse thin plate of the composite crystals showed a high resolution optical transmission like an optical fiber array, and sharp chatoyancy was observed in the cabochon shaped composite crystals. Then, this may be useful for applications such as screen of a cathode ray tube or artificial cat's eye gem stones.

• 한국세라믹학회지
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• 제39권6호
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• pp.589-593
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• 2002

Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG)를 (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG)기판 위에 Liquid Phase Epitaxy(LPE)법으로 단결정 후막을 성장시켰다 기판회전속도, 과냉도, 성장시간을 고정하여 PO/Bi$_2$ $O_3$ 몰 비 변화에 따른 성장된 가네트 결정의 격자상수 변화와 Bi 농도 분포를 조사하였다. PO/Bi$_2$ $O_3$ 몰 비가 감소함에 따라 성장된 가네트 결정의 격자상수하 Bi 농도는 증가하는 경향이 나타났으나, 가네트 결정의 두께가 증가됨에 따라 Bi 농도는 감소하는 경향이 나타났다.

• 한국세라믹학회지
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• 제35권10호
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

• 한국세라믹학회지
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• 제35권10호
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• pp.1107-1112
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• 1998

We could obtan c-axis oriented $SrBi_2$$Ta_2$$O_9$ thin films on usual Pt(111)/Ti/$SiO_2$/Si(100) substrate using a r. f. magnetron sputtering technique. According to the increase of sputtering pressure from 250 to 300 mTorr the Bi content and degree of the c-a xis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films were increased. By controlling Bi(or $Bi_2O_3$) loss from $SrBi_2$$Ta_2$$O_9$ thin films during post annealing and by inserting $Bi_2O_3$ layer in $SrBi_2$$Ta_2$$O_9$ thin films the effect of Bi content on the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films could be investigated without the effect of sputtering pressure. The degree of the c-axis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films was increased with increasing with increasing Bi content by control of Bi(or $Bi_2O_3$) loss of $SrBi_2$$Ta_2$$O_9$ thin films. But the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films disappeared by the inserting of $Bi_2O_3$ lay-er in $SrBi_2$$Ta_2$$O_9$ thin films.

• 한국재료학회지
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• 제8권7호
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• pp.659-663
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• 1998

BaO.$Nd_{2}O_{3}$.$4TiO_{2}$세라믹스에서 Bi 치환위치 및 Bi 치환 량에 따른 상, 미세구조, 마이크로파 유전특성 등을 조사하였다. BaO.$Nd_{2}O_{3}$.$4TiO_{2}$ 세라믹스의 Nd 치환되어 $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$고용체 (0$\leq$x$\leq$0.2)를 형성하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$에서 Bi 치환 량이 x=0에서 x=0.2까지 증가됨에 따라 입자크기가 계속 증가하였으며, 유전상수는 84에서 108까지 계속 증가하였고, 공진 주파수의 온도계수는 $44 ppm^{\circ}C$에서 $-30ppm^{\circ}C$로 계속 감소하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$조성에서 Bi 치환 량이 x=0.04에서 0.08사이일 때 가장 양호한 마이크로파 유전특성이 얻어졌으며 이 때의 유전상수 (${\varepsilon}_r$)는 89~92, Q, f는 5855-6091 GHz, 그리고 공진 주파수의 온도계수 (${\tau}_f$)는 -7.7-7.5 ppm/$^{\circ}C$이었다.