• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.11-11
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• 2010

In order to design for nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system were investigated for their micro structure and thermal properties. For this synthesis the liquid alloys were cooled by water quenching method. The micro structure images were taken by using electron probe micro analyzer (EPMA). Dendritic and lamellar structures were clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. It was confirmed that a metastable compounds is $PbBi_2Te_4$ in the The $Bi_2Te_3$-PbTe system. The change in the composition increasing $Bi_2Te_3$ ratio causes to change structure from dendritic to lamellar. Seebeck coefficient of alloys 5 which the mixture rate of $Bi_2Te_3$ is 83% was measured as the highest value. In contrast, the others decreased by increasing $Bi_2Te_3$. n-type characteristics was observed at all condition except alloy 6 which $Bi_2Te_3$ ration is 91%. The power factors of all samples were calculated with Seebeck coefficient and resistivity. Also the thermal conductivity was measured by using laser flash analyzer (LFA). In this work, the microstructures and thermal properties have been measured as a function of ratio of $Bi_2Te_3$ in the $Bi_2Te_3$-PbTe system.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.42-43
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• 1994

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.263-263
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• 2009

The microtstructures and properties of alloys in the pseudo-binary $Bi_2Te_3-PbTe$ system were investigated as a first step towards the design of nanostructured materials with enhanced thermoelectric properties. The liquid alloys were cooled by water quenching method. Dendritic and lamellar structures were observed clearly by using environmental scanning electron microscope(eSEM) and electron probe micro analyzer(EPMA) take into account composition ratio between $Bi_2Te_3$ and PbTe. The compound $Pb_2Bi_6Te_{11}$ precipitated as a metastable phase under all conditions. The structure of those samples changed from dendritic to lamellar by increasing $Bi_2Te_3$ ratio of composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.502-507
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• 2010

In order to design nano structured materials with enhanced thermoelectric properties, the alloys in the pseudo-binary $Bi_2Te_3$-PbTe system are investigated for their micro structure properties. For this synthesis, the liquid alloys are cooled by the water quenching method. Micro structure images are obtained by using an electron probe micro analyzer(EPMA). Dendritic and lamellar structures are clearly observed with the variation in the composition ratio between $Bi_2Te_3$ and PbTe. The increase in the $Bi_2Te_3$ composition ratio causes to change of the structure from dendritic to lamellar. The Seebeck coefficient of sample 5, in which the mixture rate of $Bi_2Te_3$ is 83%, is measured as the highest value. In contrast, the others decrease with the increase of the $Bi_2Te_3$ composition ratio. Meanwhile, p-type characteristics are observed in sample 6, at 91%-$Bi_2Te_3$ mixture rate. The power factors of the all samples are calculated with the Seebeck coefficient and resistivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.49-49
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• 1998

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.251-258
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• 1995

In an effort to increase the thermoelectric figure of merit by reducing the thermal conductivity, the unidirectionally solidified n-type (Bi, Pb)-Te based alloys which form a $Bi_{2}Te_{3}-PbBi_{4}Te_{7}$eutectic lamellar structure were investigated with the microstructural control at various solidification conditions. PbBi_{4}Te_{7}$ lamellae were grown on cleavage plane(0001) of $Bi_{2}Te_{3}$ and the interlamellar spacing decreased from 10.4 $\mu \textrm{m}$to 3.2$\mu \textrm{m}$ with growth velocity variation from 1.4 \times 10^{-4}$cm/sec to $8.3 \times 10^{-4}$cm/sec. Seebeck coefficient was constant, $\mid$$\alpha$$\mid$=29 $\mu$ V/K regardless of growth direction, growth velocity and temperature gradient. Electrical conductivity showed a tendency to decrease slightly with growth velocity and it parallel to growth direction was about three times as large as perpendicular direction. The figures of merit were varied differently from Seebeck coefficients and electrical conductivities depending on the growth direction, growth velocity and temperature gradients. They showed the relative increase in case of perpendicular direction compared with parallel to growth direction. It is believed to be due to the reduction of the thermal conductivity according to decrease of the interlamellar spacing.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.51-51
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• 1998

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1223-1224
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• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• Journal of Powder Materials
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• v.23 no.2
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• pp.120-125
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• 2016

P-type ternary $Bi_{0.5}Sb_{1.5}Te_3$ alloys are fabricated via mechanical alloying (MA) and spark plasma sintering (SPS). Different ball sizes are used in the MA process, and their effect on the microstructure; hardness, and thermoelectric properties of the p-type BiSbTe alloys are investigated. The phases of milled powders and bulks are identified using an X-ray diffraction technique. The morphology of milled powders and fracture surface of compacted samples are examined using scanning electron microscopy. The morphology, phase, and grain structures of the samples are not altered by the use of different ball sizes in the MA process. Measurements of the thermoelectric (TE) transport properties including the electrical conductivity, Seebeck coefficient, and power factor are measured at temperatures of 300-400 K for samples treated by SPS. The TE properties do not depend on the ball size used in the MA process.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.