• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.232-235
• /
• 1999

In this paper, We described the effect of $MoO_3$ Addition and firing temperature on the microwave dielectric properties of $BiNb0_4$ ceramics. The specimens prepared by conventional mixed method was addicted by 0 - 0.03 wt% $MoO_3$ and fired at 860 - $950^{\circ}$ for 3hr. Density increased when $MoO_3$ is below O.Olwt% but decreased when over O.Olwt%. $BiNb0_4$ ceramics addicted with CuO 0.03wt % and $MoO_3$ 0.01 wt% showed microwave dielectric properties, Dielectric constant 37.5, Quality factor[Qx$f_0$]5500, Temperature coefficient of resonance frequency 15ppm/$^{\circ}$

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.4
• /
• pp.193-198
• /
• 2013

The effects of additives (Cr, Nb, Dy, and Bi) on microstructure, electrical properties, dielectric characteristics, and aging behavior of $ZnO-V_2O_5-MnO_2-Co_3O_4-La_2O_3$ (ZVMCL) ceramics were systematically investigated. The phase formed in common for all ZVMCL ceramics modified with various additives consisted of ZnO grain as a main phase, and $Zn_3(VO_4)_2$ and $ZnV_2O_4$ as the secondary phases. The sintered density and average grain size were in the range of $5.4-5.54g/cm^3$ and $3.7-5.1{\mu}m$, respectively. The ZVMCL ceramics modified with Cr exhibited the highest breakdown field (6,386 V/cm) and the ZVMCL ceramics modified with Nb exhibited the lowest breakdown field (3,517 V/cm). All additives enhanced the nonlinear coefficient (${\alpha}$), by a small or large margin, in particular, additives such as Bi and Nb noticeably increased the nonlinear coefficient, with ${\alpha}=25.5$ and ${\alpha}=23$, respectively. However, on the whole, all additives did not improve the stability against a DC stress, compared with ZVMCL ceramics.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.04a
• /
• pp.42.2-42
• /
• 2003

• Korean Journal of Materials Research
• /
• v.8 no.11
• /
• pp.1043-1047
• /
• 1998

The effect of CuO and CdO addition on the microwave dielectric properties of $BiNbO_4$, ceramics were investigated. As the content of CdO increased, sintered density and quality factor decreased. With increasing sintering temperature, both the dielectric constant and quality factor increased. In the case of specimen sintered at $960^{\circ}C$ with addition of 0.03 wt% of CuO and CdO, respectively. the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor ($Q{\times}f_0$) of 6,500 (at 5.6GHz), temperature coefficient of resonant frequency of $3ppm^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.350-353
• /
• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.300-304
• /
• 2002

We fabricated thick film monopole antennas using Mo-doped $BiNbO_{4}$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped $BiNbO_{4}$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of $Bi_{2}MoO_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at%, highest gain of ~0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Advances in materials Research
• /
• v.5 no.2
• /
• pp.93-105
• /
• 2016

KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

• Journal of the Korean Ceramic Society
• /
• v.39 no.12
• /
• pp.1190-1196
• /
• 2002

Microwave dielectric properties and multilayer characteristics $(1-x)BiNbO_4-xCaNb_2O_6$ (0${\le}$x${\le}$1.0) ceramics were investigated as a function of $CaNb_2O_6$ content. In the composition range of 0.25${\le}$x${\le}$0.75, the mixture phases of $BiNbO_4$ with stibotantalate structure and $CaNb_2O_6$ with columbite structure were detected and secondary phase or phase transition were not detected. Dielectric constant (K) of $(1-x)BiNbO_4-xCaNb_2O_6$ ceramics was largely dependent on the existing phase and could be estimated by the dielectric mixing rule calculated from maxwell equation. Typically, dielectric constant (K) of 26, quality factor (Qf) of 4300 GHz and Temperature Coefficient of resonant Frequency (TCF) of -18 ppm/${\circ}C$ were obtained for $0.5BiNbO_4-0.5CaNb_2O_6$ specimens with 0.8 wt% $CuV_2O_6$ sintered at 1000${\circ}C$ for 3h. The deviation of X-Y shrinkage and camber value of the multilayers obtained from $0.5BiNbO_4-0.5CaNb_2O_6$ green sheet sintered at 850∼950${\circ}C$ for 20 min. were smaller than those of $BiNbO_4$ multilayers.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1465-1466
• /
• 2011

We have studied structural and electrical properties of $(Na_{0.5}K_{0.5})NbO_3$ ceramics addition with $BiTiO_3$. The $(Na_{0.5}K_{0.5})NbO_3-BiTiO_3$ ceramics were fabricated by the conventional mixed oxide method, their dielectric and piezoelectric properties were investigated with the variations of additvie amount $BiTiO_3$. At the sintering temperature of $1130^{\circ}C$, the density, dielectric constant, grain size of 0.05mol% $BiTiO_3$ specimen showed the values of 4.69 g/$cm^3$, 898 and $24.8{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.439-442
• /
• 2004

The effects of sintering additives on the low-temperature sintering and microwave dielectric properties of $Mg_4Nb_2O_9$ dielectric ceramics were studied. When $3{\sim}20wt%$ of $0.242Bi_2O_3-0.758V_2O_5$ was added, the sintering temperature decreased from $1100{\sim}1300^{\circ}C$ to $950^{\circ}C$ and high density was obtained. When $Mg_4Nb_2O_9$ was sintered at $950^{\circ}C$ with 10wt% of sintering additive, the microwave dielectric properties of $Q{\times}f_0\;=\;80.035GHz,\;\epsilon_r\;=\;13.3\;and\;\tau_f\;=\;-12.9\;ppm/^{\circ}C$ were obtained.