• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.25-25
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• 1998

• 한국재료학회지
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• 제11권4호
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• pp.290-293
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• 2001

세라믹 타겟인 Sr$_2$Nb$_2$O$_{7}$ (SNO)과 Bi$_2$O$_3$을 장착한 RF-마그네트론 스퍼터링을 이용하여 SrBi$_2$Nb$_2$O$_{9}$ (SBN) 박막을 p-type Si(100) 기판 위에 증착하였다. 증착시 두 타겟의 파워비를 조절하여 조성의 변화에 따른 SBN 박막의 구조적 및 전기적 특성을 조사하였다. 증착된 SBN 박막은 $700^{\circ}C$의 산소분위기에서 1시간 동안 열처리를 하였으며 상부전극으로 Pt를 증착한 후 산소분위기에서 30분 동안 $700^{\circ}C$에서 전극 후열처리를 실시하였다. 증착된 SBN 박막은 $700^{\circ}C$ 열터리 후에 페로브스카이트 상을 나타냈으며 SNO 타겟과 Bi$_2$O$_3$타겟의 파워가 120 W/100 W 일 때 가장 좋은 전기적 특성을 나타내었다. 이때의 조성은 EPMA(Electron Probe X-ray Micro Analyzer) 분석을 통하여 확인하였으며 Sr:Bi:Nb의 비가 약 1:3:2임을 나타내었다. 이러한 과잉의 Bi조성을 가진 SBN 박막은 3-9 V의 인가전압에서 1.8 V-6.3 V의 우수한 메모리 윈도우 값을 나타내었으며 누설전류 값은 인가전압 5 V에서 1.54$\times$$10^{-7}$ A/$\textrm{cm}^2$였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1465-1466
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• 2011

We have studied structural and electrical properties of $(Na_{0.5}K_{0.5})NbO_3$ ceramics addition with $BiTiO_3$. The $(Na_{0.5}K_{0.5})NbO_3-BiTiO_3$ ceramics were fabricated by the conventional mixed oxide method, their dielectric and piezoelectric properties were investigated with the variations of additvie amount $BiTiO_3$. At the sintering temperature of $1130^{\circ}C$, the density, dielectric constant, grain size of 0.05mol% $BiTiO_3$ specimen showed the values of 4.69 g/$cm^3$, 898 and $24.8{\mu}m$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.96-96
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• 2007

Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.405-408
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• 1997

The microwave dielectric properties of CuO and CdO addition of BiNbO$_4$ceramics were investigated. As the content of CdO increased, sintered density and quality factor is decreased. With increase in sintering temperature, the dielectric constant and quality factor is increased. In case of specimen sintered at 96$0^{\circ}C$ with 0.03 wt% CuO and CdO, the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor (Q$\times$f) of 6, 500, temperature coefficient of resonant frequency of ppm/$^{\circ}C$.

• 한국재료학회지
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• 제6권12호
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• pp.1186-1191
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• 1996

CuO의 첨가가 BiNbO4 세라믹스의 마이크로파 유전특성과 소결거동에 미치는 영향에 대하여 연구하였다. CuO의 첨가량이 증가함에 따라 액상의 생성에 의해 소결성이 증가하여 시편의 밀도는 증가하며 유전상수는 소결온도가 증가함에 따라 증가하는 경향을 보였다. Qxfo값은 CuO 첨가량이 0.065wt%이고 소결온도가 94$0^{\circ}C$일 때 최대값을 나타내며 그 이상 CuO 첨가량을 증가하였다. 소결온도 92$0^{\circ}C$-96$0^{\circ}C$, 소결시간 2시간일 때의 고주파 유전특성으로는 유전상수가 43.6, Qxfo값이 13,200 이상, $\tau$f =-14.36ppm/$^{\circ}C$을 얻었다.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.638-644
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• 2008

The effects of $Nb_2O_5$ and $MnO_2$ on the positive temperature coefficient of resistivity (PTCR) behavior of lead-free $Ba_{0.99}(Bi_{1/2}Na_{1/2})_{0.01}TiO_3$ (BaBiNT) ceramics were investigated in order to fabricate a PTC thermistor available at high temperature of > $120^{\circ}C$. In particular, 0.05 mol% $Nb_2O_5$ added BaBiNT ceramic, which has significantly increased Curie temperature (Tc) of $160^{\circ}C$, showed good PTCR behavior; low resistivity at room temperature $(\rho_r)$ of $80.1{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $5.65{\times}10^3$ and a large resistivity temperature factor (a) of 18.5%/$^{\circ}C$. Furthermore, the improved $\rho_{max}/\rho_{min}$ of $6.48{\times}10^4$ and a of 25.4%/$^{\circ}C$ along with higher $T_c$ of $167^{\circ}C$ despite slightly increased $\rho_r$ of $569{\Omega}{\cdot}cm$, could be obtained for the BaBiNT + 0.05 mol% $Nb_2O_5$ + 0.02 wt% $MnO_2$ ceramic cooled down at a rate of $200^{\circ}C/h$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.506-510
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• 2012

In this study, lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics were fabricated by conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics with the variation of sintering temperature were investigated. As results of x-ray diffraction analysis, all specimens showed a typical polycrystalline perovskite structure without presence of the second phase. Sintered density increased with an increases of sintering temperature and the specimen sintered at $1,020^{\circ}C$ showed the maximum value of 4.5 $g/cm^3$. The average grain size of the $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimen sintered at $1,020^{\circ}C$ is about 0.83 ${\mu}m$. Electromechanical coupling factor, relative dielectric constant and dielectric loss of $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimens sintered at $1,020^{\circ}C$ were 0.252, 741 and 0.043% respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.549-552
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• 2002

$(SrBi_2Nb_2O_9)_{0.5}-(Bi_3TiNbO_9)_{0.5}$ ceramics were fabricated by the mixed-oxide method, and the structural and electrical properties with variation of ball-milling time were investigated. All SBN-BTN specimens showed the typical polycrystalline X-ray diffraction patterns without the presence of the second phase. The SBN-BTN specimen sintered at $1200^{\circ}C$ and ball-milled for 168h showed the average grain size of $16{\mu}m$. The dielectric constant and dielectric loss of the SBN-BTN specimen sintered at $1150^{\circ}C$ and ball-mill for 72h were 225, 0.4% at 1KHz, respectively.