• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.219-223
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• 2005

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• Journal of the Korean Chemical Society
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• v.15 no.2
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• pp.49-54
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• 1971

It is shown that the impurities of Cu(II), Pb(II), Zn(II) and Ag(I) in Bismuth metal and the components of Pb(II), Zn(II) and Sn(IV) in Bismuth alloy are separated into their components from each other by elutions through $3.14cm^2{\times}10cm$ cation exchange resin, $Dowex\;50w\;{\times}\;8$ (100~200 mesh), column with the mixed solutions of HAc and NaAc as the eluents. The elution curve of Fe(III) has a long tailing and is not separated quantitatively from Bi(III). The eluents used for this separation are as follows; 1M HAc + 0.1M NaAc (pH 3.36) for Fe(III) and Bi (III). 0.3M HAc + 0.3M NaAc (pH 4.70) for Cu(II), Pb(II) and Zn(II). 0.5M HAc + 0.5M NaAc (pH4.70) for Ag(I) and Sn(IV). The analysis of cations eluted are carried out by spectrophotometry and EDTA titrimetry. Their recoveries are more than 99%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.961-968
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• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.199-203
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• 2004

Superconducting B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin films were prepared by single target DC-magnetron sputtering. And, that was compared with the B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=1～3) thin film fabricated by using the ion beam sputtering. Phase intergrowth among n=2-3, 3-4 and 4-5 phases was observed. The molar fraction of each phase in the mixed crystal of the deposited films was determined by x-ray diffraction analyses and investigated as a function of $O_2$ gas pressure during sputtering. We investigated the changes of the superconducting properties by molar fraction of each phase. Also, the thin film surface observation was carried out by atomic force microscope. The images show the average particle size decreases, and the distribution density of particles on the film surface was to increase with lower gas pressures. The fabrication conditions for selective growth of the single n=2, 3 and 4 phases in BiSrC $a_{n-l}$C $u_{n}$ $O_{x}$(n=2～4) thin film are discussed.e discussed.ussed.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.15 no.3
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• pp.389-398
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• 2002

The mixed mode problem (I and II) of a peny-shaped interface cracks in remote tension loading on a bi-material cylinder is studied using finite element method. The energy release rates for the tip of the crack in the interface were calibrated for several different moduli combinations and crack ratios using the modified crack closure integral technique and J-integral method, with numerical results obtained from a commercial finite element program. Numerical results show that non-dimensional value of$\sqrt{G_{II}E^*}/\sqrt[p]{\pi a}$ increases as the crack size or moduli ratio increases. Meanwhile, non-dimensional value of$\sqrt{G_{I}E^*}/\sqrt[p]{\pi a}$ decreases as the moduli ratio increases, but above the moduli ratio of 3 its value decreases then increases again as the crack size increases. Reliability of the numerical analysis in this study was acquired with comparison to an analytical solution for the peny-shaped interface crack in an infinite medium.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.368-369
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• 2006

Ferroelectric thin films have attracted much attention for applications in nonvolatile ferroelectric random access memories(NVFeRAM) from the view points of high speed operation, low power consumption, and large scale Integration[1,2]. Among the FRAM, BLT is of particular interest. as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). BLT capacitors were practicable by a damascene process using CMP. The P-E hysteresis were measured under an applied bias of ${\pm}5V$ by using an RT66A measurement system. The electric properties such as I-V were determined by using HP4155A analysers.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.201-210
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• 1991

본 논문에서는 (B $i_{1-x}$ P $b_{x}$)$_{2}$S $r_{2}$C $a_{2}$C $u_{3.6}$ $O_{y}$ (x=0~0.5)로 조성된 분말의 최적 하소온도를 결정하고 시편의 최적 소결온도를 규명하기 위하여 열분석을 하였다. 또 단일상의 고온 초전도체를 제작하기 위하여 열처리 온도, 시간 및 Pb 함량 변화에 따라 제작된 시편의 미세구조, 조성, 전기저항 및 전류밀도를 측정하여 상호 연관성을 종합적으로 분석, 검토하여 상변이에 관한 원인을 규명하고자 하였다. 또한 실용화 전 단계로서 임계특성 해석을 위하여 성형조건을 변화시켜 시편을 제작, 전류밀도값을 측정하였다.였다.다.

• Journal of the Korean Ceramic Society
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• v.27 no.7
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• pp.943-951
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• 1990

Steady-state sublimation vapour pressures of anhydrous bismuth triiodide have been measured by the continuous gravimetric Kundsen-effusion method from 430.0 to 558.9 K and equilibrium sublimation pressures were obtained from the steady-state data. Condensation coefficients and their temperature dependence have been derived from the effusiion measurement. Condensation coefficients ranged from 0.159 to 0.048(475 to 500K), the activation enthalpy and entropy for condensation have been obtained as -93.38kTmol-1 and -212.70JK-1mol-1. The standard sublimation enthalpy changes derived by both second(modified sigma function) and third(average enthalpy method) law methods were 138.261$\pm$0.023, 138.74$\pm$0.002kJmol-1 respectively. The standard sublimation entropy change derived by modified sigma function was 191.98$\pm$0.047 JK-1mol-1. The reliable standard sublimation enthalpy change based on a correlation of ΔgcrHom(298.15K) and ΔgcrSom(298.15K), a recommended p(T) equation has been obtained for BiI3(cr) ; 1g(p/Pa)=-C/(T/K)＋5.0711g(T/K)-2.838$\times$10-3(T/K)-7.758$\times$103(K/T)2＋1.4519 where p is in Pa, T in Kelvin, ΔgcrHom(298.15K) in kJmol-1 and C=(ΔgcrHom(298.15K)-8.7358)/1.9146$\times$10-2.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.236-242
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• 1999

J noise component due to base spreading resistance ${\gamma}_{bb}$ of bipolar junction transistors fabricated by BiCMOS process is experimentally analyzed. The analysis of equivalent noise circuit for common collector shows that output 1/f noise value is purely generated from ${\gamma}_{bb}\;when\;g_m^{-1}-{\gamma}_{bb}-R_B$ is closely to zero. From the $S^{1/f}_{Irbb}=K_fI_b{^{A_1}}/f$, we fine that $A_f=2,\;K_f{\simeq}5{\times}10^{-9}$. And Hooge constant ${\alpha}$ values are in the order, of 10$^{-3}$.