• Journal of the Korean Chemical Society
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• v.29 no.5
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• pp.522-532
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• 1985

The reactions of p-nitrophenyldiphenylphosphate (p-NPDPP) with anions of benzimidazole (BI) and its 2-alkyl derivatives (R-BI) are strongly catalyzed by the micelles of cetyltrimethyl ammonium bromide (CTABr). On the other hand, the first order rate constants $(k'_{R-BI^-})$ and the second order rate constants $(k_{m(R-BI^-)})$ of the reactions mediated by R-$BI^-$in the micellar pseudophase are much smaller than those mediated by $BI^-$. In order to explain the slower rates of the micellar reactions mediated by R-$BI^-$, we compared the concentration-ratios ([R-$BI^-$]/[$BI^-$]) with the first order rate constant-ratios $(k'_{R-BI^-}/k'_{BI^-})$ and the second order constant-ratios $(k_{m(R-BI^-)}/k_{m(BI^-)})$ for the reactions taking place in the micellar pseudophase. The rate constant-ratios were much smaller than the concentration-ratios. For example in a 5 ${\times}10^{-4}$M butyl-BI solution, the two ratios were 0.089 and 0.430 (for the first order) respectively, and in a $10^{-4}$M butyl-BI solution the former was 0.100 (for the second order). This predicts that the reactivities of R-$BI^-$ in the micellar pseudophase are much smaller than that of $BI^-$. Based on the values of several kinetic parameters measured for dephosphorylation of p-NPDPP mediated by R-$BI^-$, a schemetic model is proposed. Due to the hydrophobicity and the steric effect of the alkyl substituents, these groups would penetrate into the core of the micelle for stabilization by van der Waals interaction with long cetyl groups of CTABr. Consequently, the movements of R-$BI^-$ bound to the micelle should be restricted, leading to decreased collison frequencies between the nucleophiles and p-NPDPP. We refer this as an "anchor effect". This effect became more predominent when a larger alky group in R-BI was employed and when a greater concentration of R-BI was used.

• Economic and Environmental Geology
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• v.22 no.3
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• pp.253-266
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• 1989

The Cu-Pb-Zn-Ag hydrothermal vein type deposits which comprise the Dongil and Dong-cheogogsan mines occur within the Cretaceous sedimentary rocks in the Euiseong Basin of the southern Korean peninsula. The ore mineralization is contained within three stage(I,II and III) quartz and calcite veins. Ore minerals occur as dominant chalcopyrite, galena, sphalerite, tetrahedrite and Pb, Ag, Sb and Bi-bearing sulfosalts. Stage I ore minerals were deposited between $400^{\circ}C$ and $200^{\circ}C$ from the fluid with moderate salinities(7.0 to 4.5 eq. wt. % NaCl). Evidence of boiling suggests pressure of less than 150 bars during stage I mineralization. This pressure corresponds to maximum depths of 650 m and 1700 m, respectively, assuming lithostatic and hydrostatic loads. The data on mineralogy, temperature and salinity, together with information on the solubility of Cu complex, suggest that Cu deposition is a result of boiling coupled with declining temperature from $350^{\circ}$ to $250^{\circ}C$ or declining log $a_{o_2}$(from -29.8 to -35.9 atm.)and increasing in pH. Pb, Ag, Sb and Bi-bearing sulfosalts were deposited by cooling and dilution at temperature of less than $250^{\circ}C$ from the ore fluid with less than -35.9 atm. of log $a_{o_2}$.

• Geomechanics and Engineering
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• v.33 no.3
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• pp.279-289
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• 2023

Brittleness index (BI) is an important property of rocks because it is a good index to predict rockburst. Due to its importance, several empirical and soft computing (SC) models have been proposed in the literature based on the punch penetration test (PPT) results. These models are very important as there is no clear-cut experimental means for measuring BI asides the PPT which is very costly and time consuming to perform. This study used a novel Multivariate Adaptive regression spline (MARS), M5P, and white-box ANN to predict the BI of rocks using the available data in the literature for an improved BI prediction. The rock density, uniaxial compressive strength (σ_c) and tensile strength (σ_t) were used as the input parameters into the models while the BI was the targeted output. The models were implemented in the MATLAB software. The results of the proposed models were compared with those from existing multilinear regression, linear and nonlinear particle swarm optimization (PSO) and genetic algorithm (GA) based models using similar datasets. The coefficient of determination (R²), adjusted R² (Adj R²), root-mean squared error (RMSE) and mean absolute percentage error (MAPE) were the indices used for the comparison. The outcomes of the comparison revealed that the proposed ANN and MARS models performed better than the other models with R² and Adj R² values above 0.9 and least error values while the M5P gave similar performance to those of the existing models. Weight partitioning method was also used to examine the percentage contribution of model predictors to the predicted BI and tensile strength was found to have the highest influence on the predicted BI.

• Journal of Powder Materials
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• v.31 no.1
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• pp.50-56
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• 2024

We report the effect of plastic deformation on the thermoelectric properties of n-type Bi₂Te_2.5Se_0.5 compounds. N-type Bi₂Te_2.5Se_0.5 powders are synthesized by an oxide-reduction process and consolidated via spark-plasma sintering. To explore the effect of plastic deformation on the thermoelectric properties, the sintered bodies are subjected to uniaxial pressure to induce a controlled amount of compressive strains (-0.2, -0.3, and -0.4). The shaping temperature is set using a thermochemical analyzer, and the plastic deformation effect is assessed without altering the material composition through differential scanning calorimetry. This strategy is crucial because the conventional hot-forging process can often lead to alterations in material composition due to the high volatility of chalcogen elements. With increasing compressive strain, the (00l) planes become aligned in the direction perpendicular to the pressure axis. Furthermore, an increase in the carrier concentration is observed upon compressive plastic deformation, i.e., the donor-like effect of the plastic deformation in n-type Bi₂Te_2.5Se_0.5 compounds. Owing to the increased electrical conductivity through the preferred orientation and the donor-like effect, an improved ZT is achieved in n-type Bi₂Te_2.5Se_0.5 through the compressive-forming process.

• Journal of the Korean Ceramic Society
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• v.18 no.1
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• pp.13-22
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• 1981

This study is to investigate the effective mineralizer in the manufacture of forsterite porcelain as a high frequency insulator. A mixture of $Mg(OH)_2$. and $SiO_2$.($\alpha$-Quartz) corresponding to the molar ratio of 2.0 MgO: 1.0 $SiO_2$ was prepared from the materials of high purity. It was heated to 140$0^{\circ}C$ at the rate of 20$0^{\circ}C$/hr, which was kept constantly for 1 hour, and one has made chamotte after cooling. Six kinds of glasses were prepared by an 0.1 atomic equivalent of K ions substitution-Ba, Bi, Zn, Cd, Zr-to the basic K-glass (0.333 $K_2O$.1.14 $SiO_2$) and were melted approximately at 150$0^{\circ}C$. The forsterite bodies were provided by adding each glass (10, 15, 20, 25, 30%) to the forsterite chamotte, which was fired at 1320, 1360, 1400, 144$0^{\circ}C$. (1 hr). One has examined the physical and dielectric properties for the specimens. The results of the experiments are as follows; 1. As for water absorption: Bodies were better vitrified with an addition and temperature change of Ba, Bi, Zn-glasses. The specimen containing Cd-glass showed deviation of slow decreasing, where as K-glass was completely not vitrified. 2. Bodies containing Ba, Zn, Bi-glasses appeared comparatively high Modulus of Rupture at 136$0^{\circ}C$, while containing Zr-glass had the highest Modulus of Rupture as the addition changes remarkably at 140$0^{\circ}C$. 3. It was estimated that 20-25% glass present in a forsterite bodies were in good conditions as for physical properties. 4. Specimens of Ba, Bi, Zr-glasses were superior as for dielectric properties, where among Ba-glass was most excellent. 5. Dielectric constant commonly increases in a slight gradient as firing temperature rises. 6. The petrographic examination showed that the bodies containing Ba, Bi-glasses had fine crystals, and were observed distinctly large mosaic crystals in the Zn-glass.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.321-324
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• 1991

In this study, $(Sr{\cdot}Pb)TiO_3$ series ceramics which is used in high voltage were fabricated by the mixed oxide method, and the electrical conduction mechanism and D.C. breakdown voltage characteristics of the specimens in accordance with the contents of $Bi_2O_3{\cdot}3TiO_2$ were investigated. As a result, the leakage current was increased with the contents of $Bi_2O_3{\cdot}3TiO_2$ and the measuring temperature. At room temperature, the leakeage current was showed a tendency of saturating when D.C. electrical field of $l5{\sim}30$[kV/cm] was applied to the specimen. As a result of breakdown voltage characteristics. breakdown strength was decreased when the contents of $Bi_2O_3{\cdot}3TiO_2$ were increased. On the other hand, in the temperature region below $60[^{\circ}C]$, the electronic breakdown was occured, and in the temperature region from 60 to $200[^{\circ}C]$, the thermal breakdown was occured by the Joule heat and the dissipation factor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.783-787
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• 2002

In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..

• Progress in Superconductivity
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• v.3 no.1
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• pp.28-30
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• 2001

We studied the flux-flow current-voltage characteristics of microwave-generated fluxons formed in serially stacked intrinsic Josephson junctions fabricated on$ HgI_2$-intercalated $Bi_2$$Sr_2$$CaCu_2$O/8+x/(Bi2212) single crystals. With increasing the irradiation power of 73$\square$76 GHz microwave, the supercurrent branch became resistive and split into multiple sub -branches. Each sub-branch represented a specific mode of collective motion of Josephson fluxons. We also observed similar branch splitting In a mesa prepared on an underdoped Bi2212 single crystal in a static magnetic field.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.50-50
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• 2010

Seebeck 효과를 이용한 열발전 소자는 에너지 절약에 대한 사회적인 필요성이 크게 대두됨에 따라 산업폐열 등 저급의 열에너지를 이용한 발전과 무인 작동이 가능하다는 점에서 군사 의료용 및 인공위성의 보조전원의 특수 목적용 전원등으로 사용하고 있다. 또한 Peltier 효과를 이용한 열전냉각 소자는 전자 광학기의 냉각 및 항온유지 등에 이용되고 있다. 이러한 열전소자 중 Bismuth Telluride계 열전소자는 상온부근에서 작동효율이 우수한 것으로, 단결정 또는 소결재를 이용하고 있다. 박막형 열전재료 및 이를 이용한 열전박막소자의 제조와 특성에 관한 연구가 활발히 진행되고 있다. 본 연구에서는 Bi-Te계 열전박막을 기상 증착법으로 제조하였고, 이에 사용되는 다양한 전구체 ($Bi(Me)_3$, $Bi(Et)_3$, $Te(iPr)_2$, $Te(Et)_2$, $Te(t-Bu)_2$)에 대한 증기압, 순도 측정 및 기상 분해특성 평가를 진행하였다. 전구체의 증기압 및 순도 측정을 위해선 자체적으로 제작한 시스템을 활용하였고, 기상 분해특성 평가를 위해선 특별히 제작된 플라즈마 열처리 모듈을 활용하였다. 이러한 연구는 열전박막소자의 제조를 위한 전구체의 선별조건을 제시하는데 기여할 수 있을 것으로 생각된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.383-387
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• 2002

N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.