• Progress in Superconductivity and Cryogenics
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• v.6 no.4
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• pp.9-12
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• 2004

We report a successful fabrication of high-$J_C$ $NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on (100) $SrTiO_3$ substrates by pulsed laser deposition (PLD) in high oxygen pressures ranging from 400 to 800 mTorr. Fabricated NdBCO films exhibited only c-axis orientation, good out-of-plane and in-plane textures, and also excellent superconducting properties, including critical temperature ($T_C$) and critical current density ($J_C$) of above 90 K and the highest of $3.1MA/cm^2$ at 77 K in self-field, implying that NdBCO is a perspective alternative to YBCO for coated conductor. In low oxygen pressures ranging from 100 to 200 mTorr, however, the films showed a-, c-mixed orientation and degraded $T_{C,zero}$ values due to the formation of $Nd_{1+x}Ba_{2-x}Cu_3O_{7-{\delta}}$-type solid solutions with an excessive substitution of $Nd^{3+}$ ions for the $Ba^{2+}$ sites.

• The Journal of the Petrological Society of Korea
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• v.27 no.1
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• pp.37-47
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• 2018

Volcanic ash samples of historical eruptions from Mt. Baekdu were analyzed for major oxides, trace and rare earth elements by a variety of analytical techniques. The results indicate that the ashes consist of approximately 58.8~71.1 wt.% $SiO_2$, 9.6~16.8 wt.% $Al_2O_3$, 4.5~6.9 wt.% $Fe_2O_{3t}$, 0.1~1.7 wt.% MgO, 0.3~1.6 wt.% CaO, 5.2~6.3 wt.% $Na_2O$, 4.3~5.9 wt.% $K_2O$ and less than 1.2 wt.% $TiO_2$. Thirty two trace metals including Ba, Cu, Cr. Co, Ni, Sr, V, Zn, and Zr were analyzed. The ashes can be divided two groups: group A(1 ka Millennium pumice, 1668 and $190{\underline{3}}$ pumice) and group B(1702 pumice) according to the relative enrichment of HREEs. The abundances of heavy metals such as Cu, Co, Mn, and Zn were relatively low. As compared to the Sakurajima volcanic ash, Baekdusan volcanic ash has low concentrations of Y, Nb, Pb, U, Sc, V, Ni and Cu and high concentrations of Zr, Ba, Hf, Cr, Co, Zn and rare-earth (except Eu).

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.242-248
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• 2000

BST thin films were prepared with various deposition conditions by rf-magnetron sputtering. As substrate temperature increases and Ar/$O_2$ratio decreases, the electrical properties of the BST films improve. The conventional Schottky model and modified-Schottky model were introduced in order to investigate the leakage-current-conduction mechanisms of the deposited films. It was found that the modified-Schottky model better describes the current-conduction mechanism in the BST films than the conventional Schottky model. From the modified-Schottky model, optical dielectric constant ($\varepsilon$), electronic drift mobility ($\mu$), and barrier height $({\phi}_b)are calculated as $\varepsilon$=4.9, $\mu$=0.019 $\textrm{cm}^2$/V-s, and ${\phi}_b=0.79 eV.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.819-826
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• 2002

In this paper, the performance of Au / $Ba_{0.5}Sr_{0.5}TiO_3$ (BST) / Magnesium oxide (MgO) two-layered electrically tunable band-pass Filters (BPFs) is demonstrated. The devices consist of microstrip, coplanar waveguide (CPW), and conductor-backed coplanar waveguide (CBCPW) structures. These BST thin film band-pass filters have been designed by the 2.5 D field simulator, IE3D, Zeland Inc., and fabricated by thin film process. The simulation results, using the 2-pole microstrip, CPW, and CBCPW band-pass filters, show the center frequencies of 5.89 GHz, 5.88 GHz, and 5.69 GHz, and the corresponding insertion losses are 2.67 dB, 1.14 dB, and 1.60 dB, with 3 %, 9 %, and 7 % bandwidth, respectively. The measurement results show the center frequencies of 6.4 GHz, 6.14 GHz, and 6.04 GHz, and their corresponding insertion losses are 6 dB, 4.41 dB, and 5.41 dB, respectively, without any bias voltage. With the bias voltage of 40 V, the center frequencies for the band-pass filters are measured to be 6.61 GHz, 6.31 GHz, and 6.21 GHz, and their insertion losses are observed to be 7.33 dB, 5.83 dB, and 6.83 dB, respectively. From the experiment, the tuning range for the band-pass filters are determined as about 3 % ~ 8 %.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.128-132
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• 2004

The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ($Ba_0.6$$Sr_0.4$/$TiO_3$) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.238-241
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• 1996

New porous BaTiO$_3$ thermistors were fabricated using graphite powders (0 to 10 wt. %) and their porosities were in the range of 9.1% to 16.2%. As results of impedance analysis, it was confirmed that the pores affected the grain-boundary resistance and the bulk (grain interior) resistance was constant as about 25 $\Omega$ at room temperature. The magnitude of PTCR effect $(p_{max}/p)$ markedly increased from 3 orders to 7 orders without addition of any acceptor dopant such as Mn or Cr.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.115.3-115
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• 1998

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.169-170
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• 2008

The heterolayered PZT/PT thick films were fabricated by two different methods - thick films of the PZT by screen printing method on alumina substrates electrodes with Pt, thin films of $PbTiO_3$ by the spin coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $PbTiO_3$ coating solution at interface of the PZT thick films. The insertion of $PbTiO_3$ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $PbTiO_3$ layers. The leakage current density of the PZT/$PbTiO_3-1$ film is less that $4.41{\times}10^{-9}\;A/cm^2$ at 5 V.

• Journal of the Korean earth science society
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• v.27 no.1
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• pp.49-60
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• 2006

The purpose of this study is to investigate geochemical characteristics for stream sediments in the Naju area. We collected 139 stream sediments samples from primary channels. Samples were dried slowly in the laboratory and chemical analysis was carried out using XRF. ICP-AES and NAA. In order to investigate geochemical characteristics, the geological groups categorized into granitic gneiss area, schist area, granite area, arenaceous rock area, tuff area, andesite area, and rhyolite area. Average contents of major elements for geological groups are $SiO_2\;58.37{\sim}66.06wt.%,\;Al_2O_3\;13.98{\sim}18.41wt.%,\;Fe_2O_3\;4.09{\sim}6.10wt.%,\;CaO\;0.54{\sim}1.33wt.%,\;MgO\;0.86{\sim}1.34wt.%,\;K_2O\;2.38{\sim}4.01wt.%,\;Na_2O\;0.90{\sim}1.32wt.%,\;TiO_2\;0.82{\sim}1.03wt.%,\;MnO\;0.09{\sim}0.15wt.%,\;P_2O_5\;0.11{\sim}0.18wt.%$. According to the comparison of average contents of major elements, $Al_2O_3\;and\;K_2O$ are higher in granitic gneiss area, $Fe_2O_3,\;CaO,\;P_2O_5$ are higher in tuff area, MgO and $TiO_2$ are higher in andesite area, $Na_2O_$ is higher in rhyolite area, $SiO_2$, and MnO are higher in arenaceous rock area. Average contents of minor and rare earth elements for geological groups are $Ba\;1278{\sim}1469ppm,\;Be\;1.1{\sim}1.5ppm,\;Cu\;18{\sim}25ppm,\;Nb\;25{\sim}37ppm,\;Ni\;16{\sim}25ppm,\;Pb\;21{\sim}28ppm,\;Sr\;83{\sim}155ppm,\;V\;64{\sim}98ppm,\;Zr\;83{\sim}146ppm,\;Li\;32{\sim}45ppm,\;Co\;7.2{\sim}12.7ppm,\;Cr\;37{\sim}76ppm,\;Cs\;4.8{\sim}9.1ppm,\;Hf\;7.5{\sim}25ppm,\;Rb\;88{\sim}178ppm,\;Sc\;7.7{\sim}12.6ppm,\;Zn\;83{\sim}143ppm,\;Pa\;11.3{\sim}37ppm,\;Ce\;69{\sim}206ppm,\;Eu\;1.1{\sim}1.5ppm,\;Yb\;1.8{\sim}4.4ppm$. According to the comparison of average contents of minor and rare earth elements for geological groups, Pb, Li, Cs, Hf, Rb, Sb, Pa, Ce, Eu, and Yb are higher in granitic gneiss area; Ba, Co, and Cr in schist area; Nb, Ni, and Zr in arenaceous rock area; Sr in tuff area: and Be, Cu, V, Sc, and Zn are such in andesite area.