• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.1-6
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• 1996

A single phase Ba2(Ti8,472Zr0.528)O20 was prepared by the oxalate method from aqueous solution of BaCl2 TiCl4 and ZrOCl2. The structure ananlysis has been carried out by Rietveld analysis method at room temperature. Powder X-ray data of Ba2(Ti8,472Zr0.528)O20 was indexed with the triclinic lattice(a=7.4587 $\AA$ b=14.0672 $\AA$, c=13.3327 $\AA$, $\alpha$=89.87, $\beta$=79.45 ${\gamma}$=84.46) The R (Residual) values of structure refinement were in a range between 10.00 and 8.00 This analysis proved that the added Zr occupied Ti sites in th structure of Ba2Ti9O20. Ba2(Ti8,472Zr0.528)O20 has excellent dielectric properties(dielectric constant K=40.49 at 5.42 GHz Q=4621) so that it can be used as good microwave dielectric materials.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1516-1519
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• 1996

In this paper, a study on the electrical properties of ternary compound ceramics $[(1-y-x)BaTiO_{3}-ySrTiO_{3}-xMgTiO_3]$ fabricated 7 samples with each mol[%] by using the mixed oxide method. In this case, the sintering temperature were at $1,250[^{\circ}C]$ for 2[hr]. Also made ceramic capacitors from 7 samples, temperature coefficient of the capacitance and the variation of relative dielectric constants and loss with fixed frequency (1KHZ) were studied. In some ceramic capacitors, has shown very good properties of the dielectric constants and loss. In case of BSM-11 ceramic capacitor, is sure to the commercial capacitor which shows steady properties.

• Journal of the Korean Ceramic Society
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• v.18 no.2
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• pp.75-78
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• 1981

The electrical conductivity of $(M_2O_3)_x (BaTiO_3)_{1-x}$ has been measured over the temperature range of 30 to 27$0^{\circ}C$. The substitution of rare earth oxide such as $La_2O_3$, $Nd_2O_3$, or $Dy_2O_3$ can be represented by $M_2O_3$. The additional mole fraction of the rare earth oxide is ranged over 0.0015 to 0.0030. The electrical conductivity exhibits an anomalous decrease near the tetragonal to cubic transition about 12$0^{\circ}C$. The decrease in the electrical conductivity is observed at the higher impurity concentrations owing to space charge layer. The increase in the electrical conductivity is observed as the impurity ion is varied from $La^{+3}$$Nd^{+3}$ to $Dy^{+3}$, due to overlap of 4f electrons of the inner shell.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.62-66
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• 1996

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.284-287
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• 2002

The $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%) were prepared by the conventional mixed oxide method. The sintering temperature and time were $1350^{\circ}C$, 3hr., respectively. The structural properties were investigated with sintering temperature by XRD. Also the microwave dielectric properties of the $BaTi_{4}O_{9}$ ceramics were studied. According to the X -ray diffraction patte구 of the $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), the orthorhombic $BaTi_{4}O_{9}$ structure was appeared. In the case of $BaTi_{4}O_{9}$ ceramics with CoO(0.5wt%), dielectric constant $(\varepsilon_{r})$, quality factor$(Q{\times}f_r)$ and temperature coefficient of resonant frequency$(\tau_{f})$ were 40.8, 43,270 and $2.5ppm/^{\circ}C$, respectively.ࠀࠀ Ѐ耀
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• Korean Journal of Materials Research
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• v.17 no.2
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• pp.68-72
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• 2007

Optimum compositions for piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics were investigated in the range of $x=0{\sim}0.1$ covering rhombohedral to tetragonal phase regions. No impurity phases other than a perovskite phase were found and the grain size decreased with increasing x. A two-phase coexisting morphotropic phase area rather than boundary dividing rhombohedral and tetragonal phase regions appeared to exist at $x=0.05{\sim}0.08$. As for piezoelectric properties within morphotropic phase compositions, the piezoelectric constant ($d_{33}$) and the electromechanical coupling factor ($K_p$) showed peak values at x=0.065, 192 pC/N and 34%, respectively, indicating x=0.065 as an optimum composition for piezoelectric $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.402-405
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• 2001

$(Ba_{0.6-x}Sr_{0.4}Ca_{x})TiO_{3}$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their stuctural and dielectric properties were investigated with variation of composition ratio and an amount of $Al_{2}O_{3}$ (0.5, 1.0, 1.5. 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an $Al_{2}O_{3}$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of $Al_{2}O_{3}$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% $Al_{2}O_{3}$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% $Al_{2}O_{3}$ content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.402-405
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• 2001

(Ba$\_$0.6-x/Sr$\_$0.4/Ca$\_$x/)TiO$_3$(x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties were investigated with variation of composition ratio and an amount of Al$_2$O$_3$(0.5, 1.0, 1.5, 2.0, 3.0 wt%) doping content. As a result of the X-ray diffraction BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with increase an Al$_2$O$_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing an amount of Al$_2$O$_3$ doping content. The dielectric loss is minimum for BSCT doped with 1.5wt% Al$_2$O$_3$ content. The tunability was decreased with increasing an Ca content and is about 4.2% for BSCT(50/40/10) doped with 2.0wt% Al$_2$O$_3$ content.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.62-62
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• 1997

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.997-1000
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• 2001

Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).