• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.426-429
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• 2001

The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

• 분석과학
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• 제15권1호
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• pp.15-19
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• 2002

텅스텐이 첨가된 $BaTiO_x$계 세라믹재료 중 Ba, Ti 및 W의 회수율을 증가시키기 위하여 가압 산 분해법을 이용하여 전처리하였다. $BaTiO_x$계 세라믹재료 시료를 가압 산 부내장치 내에서 HF : HCI ( 1 : 2 ) 혼합산을 가하여 $220^{\circ}C$에서 3시간동안 분해시킨 후 ICP-AES를 이용하여 Ba, Ti 및 W을 정량하였다. 그 결과 Ba는 99.6% Ti는 99.8% W는 99.2%의 회수율과 Ba는 1.02% Ti는 0.73% W는 1.79%의 C.V.값을 각각 얻었다. 이 전처리 방법을 실제시료에 적용하여 25.9% Ba38.8% Ti과 3.31% W 함량을 각각 구할수 있었다.

• 분석과학
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• 제5권4호
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• pp.409-415
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• 1992

$BaTiO_3$의 선구물질을 하소시키는 과정에서 얻은 X-선 회절 패턴에 인자분석법을 적용하였다. 선구물질은 수용액계에서 바륨과 티타늄의 질산염용액을 시발물질로 하여 합성하였으며 이를 여러 온도에서 하소시킨 후 X-선 회절 패턴을 얻었다. X-선 회절각에 대한 피이크세기로 구성된 데이타 매트릭스에 인자분석법을 적용시켜 3개의 인자가 존재함을 확인하였다. 3개의 인자는 $BaCO_3$, $BaTiO_3$ 및 $Ba_2TiO_4$였으며 하소온도에 따른 3가지 성분의 상대적인 농도 변화를 규명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.426-429
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• 2001

The BaTiO$_3$+xNb$_2$O$_{5}$[x=6,8 , 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the BaTiO$_3$+xNb$_2$O$_{5}$ ceramics with the sintering temperature and addition of Nb$_2$O$_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the 2$\theta$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of Nb$_2$O$_{5}$, the intensity of BN (100) Peak was decreased and BN (310), (110) peaks were increased. The grain size of the BaTiO$_3$+Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$ were almost uniform. In the BaTiO$_3$+Nb$_2$O$_{5}$ ceramics sintered at 135$0^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.espectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.410-415
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• 1999

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.85-87
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• 2002

The $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics were prepared by conventional mixed oxide method The structural properties of the $(Ba_xBi_{0.6-x}Sr_{0.4})TiO_3$[x=0.1, 0.2, 0.3] ceramics with the sintering temperature($1200^{\circ}C,\;1250^{\circ}C,\;1300^{\circ}C$) were investigated by XRD, SEM, EDS. Increasing the sintering temperature, the intensity of the $Ba_{0.5}Sr_{0.5}TiO_3$ (100), (110), (111), (200), (310) peaks and $SrBi_4Ti_4O_{15}$ (319), (040) peaks were increased. The gram of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ were fine and uniform. Increasing the sintering temperature. the average gram size of the $(Bi_{0.2}Ba_{0.4}Sr_{0.4})TiO_3$ ceramics were decreased. The density of $(Bi_{0.1}Ba_{0.5}Sr_{0.4})TiO_3$ ceramics sintered at $1250^{\circ}C$ was 5.4524 [$g/cm^2$].

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.795-797
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• 1998

A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.260-261
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• 2005

The heterolayered thick/thin structure consisting of $Pb(Zr_{0.52}Ti_{0.48})O_3$ and $BaTiO_3(BT)$ were fabricated by a sol-gel process. PZT powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen printing techniques on alumina substrate with Pt electrodes. The microstructural and dielectric characteristics of the stacked heterolayered PZT/BT/PZT films were investigated by varying the number of coating $BaTiO_3$ layers. The existence of a $BaTiO_3$ layer between the PZT thick films of the tri-layer $Pb(Zr_xTi_{1-x})O_3/BaTiO_3/Pb(Zr_xTi_{1-x})O_3$thick/thin/thick film can greatly improve the leakage current properties of the PZT thick films. The average thickness of a PZT(5248)/$BaTiO_3$ heterolayered thick/thin film was 25$\mu$m. The relative dielectric constant and dielectric loss of the PZT(5248)/$BaTiO_3$-3 heterolayered thin film coated three times were 1087 and 1.00% at 1[MHz].

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.95-99
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• 2011

$(1-x)BaTiO_3+(x)Cd_5(PO_4)_3Cl$ ceramics were prepared by the conventional ceramic technique, i.e., solid state reaction at high temperature. The concentration of $Cd_5(PO_4)_3C$ was varied from 0.01 to 0.15 mole fraction. In order to study the phase transitions of our ceramics, the Raman scattering spectra were measured as functions of concentration x and temperature. It was found that the soluble limit of $Cd_5(PO_4)_3Cl$ in $BaTiO_3$ was the x=0.05 composition and $BaTiO_3$ phase disappeared above x=0.10. A new phase identified as $Ba_4Ti_3P_2O_{15}$ was detected in all samples of our compositions. The Curie temperature shifts up to $130^{\circ}C$ as the concentration x increases from zero to 0.05 and shift down to $95^{\circ}C$ as further increases to 0.08. For the increase of the Curie temperature, it is suggested that it can result from the inhibition of displacement of $Ti^{4+}$ in the distorted octahedron due to well dispersed $Ba_4Ti_3P_2O_{15}$ and $Cd_5(PO_4)_3Cl$ phase.

• 한국세라믹학회지
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• 제33권8호
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• pp.877-882
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• 1996