• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.180-182
• /
• 2004

Polycrystalline $BaTiO_3/SrTiO_3$ powder was prepared by sol-gel process and the multilayered thick films were prepared on the $Al_2O_3$ substrates by screen printing method. The films were sintered at $1400^{\circ}C$ for 2 hours in the air. The structural and dielectric properties were investigated, The X-ray diffraction (XRD) patterns indicate that the BST phase and porocity were formed in the interface of $BaTiO_3/SrTiO_3$ multilayered thick films. The dielectric constant and the dielectric loss of the BT/ST/BT/ST multilayered thick films were about 247 and 0.84% at 1MHz.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.2 s.31
• /
• pp.17-22
• /
• 2004

In this study, BNT($BaO-Nd_{2}O_3-TiO_2$) and $70P_{2}O_5-5B_{2}O_3-(25-x)BaO-xNa_{2}O$ glass-ceramic composites were fabricated and investigated in order to apply for low temperature cofired ceramic. The prepared BNT based glass-ceramic composites were sintered at $800{\sim}950^{\circ}C$ with the glass fit contents ranging from 10 to $15\;wt\%$. The properties such as sintering and dielectric property were investigated in the ceramic compositions according to the phosphate glass frit. The dielectric constant was varied between 10 to 40 and shrinkage rate was increased according to increasing glass frit.

• Korean Journal of Materials Research
• /
• v.18 no.9
• /
• pp.475-481
• /
• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.5
• /
• pp.361-364
• /
• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.79-82
• /
• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ + ywt% MgO (x=0.10, 0.15, 0.20, y=0.0~3.0) ceramics were fabricated by the conventional solid-state reaction, and their structural and dielectric properties were investigated with variation of composition ratio and MgO doping content. A second phase, representative of MgO, appears in 3wt% MgO-doped BSCT specimens. Average grain sizes decreased with increasing amounts of MgO, and the BSCT(40/40/20) specimens doped with 3wt% MgO showed a value of $9.3{\mu}m$. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing MgO doping content and Ca composition ratio. The relative dielectric constant was non-linearly decreased as the field strength is increased. The tunability was increased with decreasing a Ca content and the BSCT(50/40/10) specimen doped with 1.0wt% MgO content showed the highest value of 6.4% at 5kV/cm.

• Journal of the Korean Ceramic Society
• /
• v.39 no.7
• /
• pp.628-634
• /
• 2002

Formation rate of tetragonal BaTiO$_3$powder by hydrothermal synthesis and its dielectric property were studied. Submicron tetragonal BaTiO$_3$ powders were prepared hydrothermally, using Ba(OH)$_2$.8$H_2O$, TiO$_2$(anatase) and KOH as starting chemicals. Characterization via X-ray diffractometry, field emission scanning electron microscopy confirmed that increasing calcination temperatures(from 1100 to 130$0^{\circ}C$) promotes the formation of tetragonal BaTiO$_3$. Tetragonal BaTiO$_3$ ceramics, obtained by calcining at 1200 for 3 h after hydrothermal synthesis at 200 for 168 h, exhibited submicron size of 0.5 ~ 0.7 ${\mu}{\textrm}{m}$ and high relative permittivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.4
• /
• pp.212-215
• /
• 2018

The phase evolution, microstructure, and microwave dielectric properties of $Ba(Mg_{0.5-2x}Y_{2x}W_{0.5-x}Ti_x)O_3$ (x = 0.005~0.05) ceramics sintered at $1,700^{\circ}C$ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from $-19.6ppm/^{\circ}C$ to $-5.9ppm/^{\circ}C$ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of $Ba(Mg_{0.40}Y_{0.10}W_{0.45}Ti_{0.05})O_3$ were 21.7, 132,685 GHz, and $-5.9ppm/^{\circ}C$, respectively.

• Korean Journal of Materials Research
• /
• v.5 no.7
• /
• pp.816-819
• /
• 1995

(Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/cm.cm.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.2
• /
• pp.102-105
• /
• 2009

The accelerated life time test of the MLCCs with different $BaTiO_3$ particle sizes were conducted at $150^{\circ}C$, 75 V condition and the effect of $BaTiO_3$ particle size on the breakdown voltage and degradation characteristics of MLCCs was investigated. The MLCCs were prepared by using the $BaTiO_3$ particles having the size of $0.525{\mu}m$, $0.555{\mu}m$, $0.580{\mu}m$ and Ni-electrode, respectively. The MLCCs which have the particle size of $0.525{\mu}m$, $0.555{\mu}m$, and $0.580{\mu}m$, respectively were confirmed to meet the standard requirements of X5R(change capacitance within ${\pm}15%$ at $-55{\sim}85^{\circ}C$) by TCC(Temperature Coefficient of Capacitance). The effect of the $BaTiO_3$ particle size on the insulation resistance behavior of MLCCs was confirmed by BDV(Breakdown Voltage) measurements and the cause and degree of degradation of MLCCs were characterized by XPS analysis after the accelerated life test. The MLCCs with $0.525{\mu}m-BaTiO_3$ showed better insulation resistance and BDV characteristics compare to other MLCCs and XPS analysis revealed that the MLCCs degradation is caused by the NiO peak and $BaTiO_3$ peak decrease.

• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.360-364
• /
• 2003

Effects of sintering time upon the structures and microwave dielectric characteristics of co-substituted $Ba_{6-3x}$/S $m_{8+}$2x/ $Ti_{18}$ $O_{54}$ ceramics (x=2/3) were investigated. Prolonged sintering had significant effects upon the qf value and temperature coefficient, and a high Qf value (10,600 GHz) was obtained in the present ceramics combined with high-$\varepsilon$ (80) and near-zero temperature coefficient.t..