• 제목/요약/키워드: $BaTiO_3$ thick film

검색결과 67건 처리시간 0.022초

PZT/BT 이종 세라믹의 특성 (Characteristics of PZT/BT Multilayered thick film using Sol-gel Process)

  • 이상헌;이영희;이성갑
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
    • /
    • pp.365-366
    • /
    • 2005
  • PZT films are the most intensively investigated because PZT has advantages such as low processing temperature and large remnant values. In this paper, the microstructure and electric properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ heterolayered thick films with Zr mole ranging from 30 to 70 % screen printed onto a alumina substrate were studied. $Pb(Zr_x,Ti_{(1-x)})O_3$ and $BaTiO_3$ powders were prepared by the sol-gel method. The $BaTiO_3$ powders were calcined at $700^{\circ}C$ for 2 hours. Structural properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ multilayered thick films were investigated. As a result of the X-ray diffraction (XRD) analysis, $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ exhibited a perovskite polycrystalline phase without pyrochlore phase or any preferred orientation.

  • PDF

$BaTiO_3$ 박막과 후막의 2중 유전체로 구서된 AC 분산형 ELD의 특성 (Characteristics of AC Power Electroluminescent Device with the Double Dielectric Layers of Thin and Thick Barium Titanate Films)

  • 이주현;채상훈;;김학수;박성
    • 한국전기전자재료학회논문지
    • /
    • 제14권8호
    • /
    • pp.679-687
    • /
    • 2001
  • It is known that amorphous BaTiO$_3$ thin films have good insulating properties[1][2]. In this investigation, amorphous BaTiO$_3$ thin films were deposited by rf magnetron sputtering on thick BaTiO$_3$ films of AC powder EL devices which were fabricated by screen-printing. The electrical and optical properties of the EL devices were then investigated. Adding amorphous BaTiO$_3$ thin film, it showed that leakage current density was decreased. Especially, leakage current density was decreased more with he sample of 0.5-hour deposition than the sample of 4-hours deposition. This result led to the improvement of luminous efficiency by 11%. It could be concluded that proper amorphous BaTiO$_3$ thin film deposition improved the surface property of dielectric layer.

  • PDF

Electrical Properties of $BaTiO_3$ System Thick Films Prepared by Screen-Printing Method

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
    • /
    • pp.685-688
    • /
    • 2003
  • [ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The grain size decreased with increasing amounts of $MnO_2$, and the BSCT(50/40/10) thick film doped with 1wt% $MnO_2$ showed a value of 6.5mm. The thickness of thick films by four-cycle on printing/drying was approximately 100mm. The relative dielectric constant, dielectric loss and tunability of the BSCT(S0/40/10) thick films doped with 1.0wt% $MnO_2$ were 1296, 0.61% and 11.18%, respectively.

  • PDF

저온 소성용 SiO$_2$-TiO$_2$-Bi$_2$O$_3$-RO계(RO :BaO-CaO-SrO) Glass/ceramic 유전체 재료의 B$_2$O$_3$첨가에 따른 Ag 후막과의 동시 소결시 정합성 밀 유전 특성에 관한 연구 (A Study on the Co-firing Compatibility with Ag-thick film and Dielectric Characteristics of Low Temperature Sinterable SiO$_2$-TiO$_2$-Bi$_2$O$_3$-RO system (RO :BaO-CaO-SrO) Glass/Ceramic Dielectric Material with the Addition of B$_2$O$_3$)

  • 윤장석;이인규;유찬세;이우성;강남기
    • 마이크로전자및패키징학회지
    • /
    • 제6권3호
    • /
    • pp.37-43
    • /
    • 1999
  • 고주파에서 사용하기 위한 $SiO_2-TiO_2-Bi_2O_3$-RO계(RO:BaO-CaO-SrO)를 주성분으로 하는 결정화 유리와 세라믹 충진재로서 $Al_2O_3$를 혼합하여 제조한 저온 소성용 Glass/Ceramic 유전체 모재와 Ag-thick film의 동시 소결시 발생할 수 있는 소결 부정합과 그 해소 방안을 연구하였다. 적층된 Glass/Ceramic 유전체 sheet와 Ag-thick film의 동시 소결시에 소결체는 sheet와 film의 densification rate 차 등에 의해 큰 camber 현상과 그로 인해 Ag-film에 crack이 발생하였다. 이를 교정하기 위해 유리 성분과 $Al_2O_3$성분이 혼합된 유전체 분말에 $B_2O_3$를 6, 8, 10, 12, 14 vol% 첨가한 결과를 보면 $B_2O_3$첨가량이 증가함에 따라 소결체의 camber 현상은 점점 크게 줄어들었으며 14 vol% 첨가된 경우에는 거의 관찰되지 않았다. 또한 $BaO_3$첨가량이 증가함에 따라 유전율($varepsilon_{r}$)은 점점 감소하였고 Q$\times$f 값은 크게 증가하는 경향을 나타내었으며 $\tau_{f}$ 값은 양(+)의 값으로 점점 크게 변하였다.

  • PDF

${Li_2}{CO_3}$첨가에 의한 $BaSr(TiO_3)$의 저온 소결과 가변유전 특성 (Tunable properties and low temperature sintering of BST thick films added ${Li_2}{CO_3}$)

  • 김인성;민복기;정순종;송재성;전소현
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
    • /
    • pp.7-9
    • /
    • 2006
  • $(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

  • PDF

강유전성 후막 PTC 서미스터의 제조 및물성 (Manufacture and properties of Thick Film Ferroelectric PTC Thermistor)

  • 구본급
    • 마이크로전자및패키징학회지
    • /
    • 제5권1호
    • /
    • pp.63-72
    • /
    • 1998
  • 후막 PTC를 제조하기 위하여 BaTiO3 주원료에 Sb2O3와 MnO2를 첨가한 PTC 페이 스트를 ZrO2와 BaTiO3 기판위에 인쇄한후 13$25^{\circ}C$에서 1시간 동안 소결하였다. BaTiO3 기판 위에 형성된 PTC후막은 PTCR 특성을 나타내었다. 그러나 ZrO2기판위에 인쇄된 시편의 경 우 PTCR특성이 나타나지 않았다. 이것은 ZrO2기판과 인쇄된 PTC페이스트간의 열팽창계수 차이에 의한 thermal cracking 때문에 후막 PTC 형성이 불가능함을 보여주었다.

Electrical Properties of BaTiO3 Thick Films Fabricated by Screen-printing Method

  • Ahn, Byeong-Lib;Lee, Sung-Gap
    • Transactions on Electrical and Electronic Materials
    • /
    • 제8권4호
    • /
    • pp.149-152
    • /
    • 2007
  • [ $(Ba_{0.6}Sr_{0.3}Ca_{0.1})TiO_3$ ](BSCT) thick films doped with 0.1 mol% $MnCO_3\;and\;Yb_2O_3(0.1{\sim}0.7mol%)$ were fabricated by the screen printing method on the alumina substrates. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The exothermic peak was observed at around $680^{\circ}C$ due to the formation of the poly crystalline perovskite phase. The lattice constants of the BSCT thick film doped with 0.7 mol% is 0.3994 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about $4.2{\mu}m$. The average thickness of all BSCT thick films was approximately $70{\mu}m$. Relative dielectric constant and dielectric loss of the specimen doped with 0.7 mol% $Yb_2O_3$ were 2823 and 3.4%, respectively. The Curie temperature of the BSCT thick films doped with 0.1 mol% $Yb_2O_3$ was $46^{\circ}C$.